52results about How to "Achieve leapfrog development" patented technology

The invention provides a realization method for a multilevel intelligent multifunctional multimedia information interaction system. The method comprises the steps of: (1) framing a multilevel information interaction system; (2) configuring system management layers, intermediate operation layers and terminal layers for the multilevel information interaction system; (3) using a B / S and C / S composite structure application network, and using a B / S application structure between the system management layers, in the system management layers and in the terminal layers and using the C / S application structure in the intermediate operation layers and in the terminal layers; (4) installing information interaction system software for the system servers of the management layers and the intermediate operation layers, installing information interaction user terminal software at user terminals; (5) using a rapid cache structure for information interaction between system servers of the intermediate operation layers and of the user terminals; (6) configuring for the system A-type user terminals by connecting a security network through a wireless communication platform and B-type user terminals without connecting the security network; (7) carrying out user terminal identity authentication and real-time registration; (8) carrying out user terminal information downloading to confirm file fingerprint; and (9) constructing a perfect education evaluation system in the system. The realization method for a multilevel intelligent multifunctional multimedia information interaction system has characteristics of a wide application scope, a low hardware cost, interactive information intelligent multifunction, and a real-time transmission, and the method is conducive to comprehensively popularize the education system and promote a steady development of a new audio-visual industry.

The invention discloses an implementation method and application of a dynamic personalized calligraphy character library, relating to the technical field of computers and artificial intelligence. The implementation method comprises the following steps of: 1, establishing a three-dimensional computer model of a writing brush; 2, encoding Chinese characters; 3, collecting a writing process of a writer to obtain a time function of spatial motion of a penholder; 4, carrying out statistical machine learning on the obtained contents of the steps 2 and 3 to obtain a pen wielding habit of the writer; and 5, implementing the functions of the dynamic personalized calligraphy character library by using a spatial motion statistical model of the penholder, which is obtained in the step 4 when the writer writes each character and sampling a random process of the statistical model. According to the invention, the dynamic personalized calligraphy character library of the writer can be efficiently and objectively generated by a computer, and the purposes of writing the characters on electronic display equipment or paper for heaps of times like writing by a real person, but ensuring that handwritings are different at every turn are achieved; and therefore compared with the traditional static character library, the dynamic personalized calligraphy character library implemented by the implementation method disclosed by the invention has the advantages of more according with the handwriting process of real persons and improving the character library level.

The invention provides a strain SiGe square-in-square type channel NMOS (N-channel Metal Oxide Semiconductor) integrated device which is suitable for an NMOS integrated device, and a preparation method of the strain SiGe square-in-square type channel NMOS integrated device by using a micron level process. The preparation method comprises the steps of: continuously growing a Si epitaxial layer, a first strain SiGe light doping drain region (LDD) electrode layer, a strain SiGe layer, a second strain SiGe LDD region layer and an N type Si layer; forming a drain region, a source region and a drain connecting region by using technical means such as chemical vapor deposition (CVD) and dry etching and finally forming an NMOS device; and photoetching a lead to form an NMOS integrated circuit. According to the invention, under the condition of no addition of any fund and equipment input, the stain SiGe square-in-square type vertical channel NMOS integrated device which is improved in property in comparison with a body Si NMOS is manufactured at low temperature.

The invention discloses a method based on SiN / SiO2 masking technique for fabricating a nano-scale CMOS integrated circuit. The process includes the following steps: fabricating an N / P well and growinga Poly- Si / SiO2 / Poly-Si multi-layer structure on the N / P well; etching the top layer of Poly-Si into a window and then depositing a layer of SiN; etching the SiN layer on the surface, except the SiNat the side face of the window; based on the etching ratio of Poly-Si to SiN (11:1), etching the Poly-Si at the surface of SiN; based on the etching ratio of (4:1), etching the SiN on the surface, except the SiN on the side wall of SiO2; based on the etching ratio of Poly-Si to SiN, etching the Poly- Si, except the Poly- Si on the side wall of the SiO2 so as to form an n / p MOSFET grid; injecting ions, self-aligning, and forming the source area and the drain area of the n / p MOSFET grid so as to form an n / p MOSFET device; and photoetching interconnection lines of the device so as to form a CMOSintegrated circuit with a conducting channel at 65-90nanometer. The method can fabricate a CMOS integrated circuit which is improved in performance by 3-5 generations on a micron-scale Si integrated circuit processing platform without adding any funds and equipment investment.