72results about "Material work function voltage" patented technology

A method to detect metal contamination on a semiconductor topography is provided. The semiconductor topography may include a semiconductor substrate or a dielectric material disposed upon a semiconductor substrate. The metal contamination may be driven into the semiconductor substrate by an annealing process. Alternatively, the annealing process may drive the metal contamination into the dielectric material. Subsequent to the annealing process, a charge may be deposited upon an upper surface of the semiconductor topography. An electrical property of the semiconductor topography may be measured. A characteristic of at least one type of metal contamination may be determined as a function of the electrical property of the semiconductor topography. The method may be used to determine a characteristic of one or more types of metal contamination on a portion of the semiconductor topography or the entire semiconductor topography. A system configured to detect metal contamination on a semiconductor topography is also provided. An oven may be incorporated into the system and may be used to anneal the semiconductor topography. The system may also include a device that may be configured to deposit a charge on an upper surface of the semiconductor topography. A sensor may also be included in the system. The sensor may use a non-contact work function technique to measure an electrical property of the semiconductor topography.

A gas-sensitive field-effect transistor may be formed from a substrate with a gas-sensitive layer and a transistor processed separately and then assembled. The substrate may be patterned to form spacers by which the height of an air gap between the transistor and the sensitive layer may be adjustable to a relatively precise degree. Formation of the spacers can be achieved by patterning the substrate using material-removal techniques. The height of the spacers may be adjusted in the layer thickness of the gas-sensitive layer and for the transistor fabricated using a CMOS process. Suitable techniques for producing recesses between the spacers include, for example, polishing, cutting, sandblasting, lithographic dry etching, or wet-chemical etching. Suitable materials for the substrate may include, for example, glass, ceramic, aluminum oxide, silicon, or a dimensionally stable polymer. Following preparation of the substrate and the transistor, the two elements of the transistor are joined, for example, using flip-chip methods or adhesive-bonding technology.

A method and system for identifying a defect or contamination on a surface of a sample. The system operates by detecting changes in work function across a surface via both vCPD and nvCPD. It utilizes a non-vibrating contact potential difference (nvCPD) sensor for imaging work function variations over an entire sample. The data is differential in that it represents changes in the work function (or geometry or surface voltage) across the surface of a sample. A vCPD probe is used to determine absolute CPD data for specific points on the surface of the sample. The combination of vibrating and non-vibrating CPD measurement modes allows the rapid imaging of whole-sample uniformity, and the ability to detect the absolute work function at one or more points.

A method and apparatus for measuring dopant profile of a semiconductor is disclosed. Initially, the temperature of a tip of a probe and the temperature of a semiconductor sample are ascertained. Then, a voltage at a location on a surface of the semiconductor sample is obtained via the tip of the probe. The dopant concentration at the location of the surface of the semiconductor sample is subsequently determined by combining the obtained voltage and the temperature difference between the probe tip and the semiconductor sample. The above-mentioned steps can be repeated in order to generate a dopant profile of the semiconductor.

A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdOx). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600° C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sized sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.

A method and a system for calibrating the work function of a non-contact voltage sensor are provided. The method includes preparing a reference sample to have a stable work function, measuring a voltage of the sample using a non-contact voltage sensor, and determining a work function correction factor of the sensor from the measured voltage. In turn, the calibrated work function may be used to adjust voltages of substrates measured by the sensor. A corona gun which includes a first electrode and one or more conductive rods is provided. In some embodiments, the conductive rods may be angled between 0 and 90 degrees with respect to a first electrode sidewall and / or be concentrically arranged less than 90 degrees from each other. In addition or alternatively, the corona gun may be adapted to alter its length and / or include a second electrode partially inset within a space surrounded by the first electrode.

A method and system for identifying a defect or contamination on a surface of a material. The method and system involves providing a material, such as a semiconductor wafer, using a non-vibrating contact potential difference sensor to scan the wafer, generate contact potential difference data and processing that data to identify a pattern characteristic of the defect or contamination.

The invention relates to a measuring method of work function which comprises the following steps: a carbon nanometer tube field eradiation electron source is a cathode, and an anode is provided in the preset distance to the cathode; voltage is exerted in the field eradiation electron source in the vacuum environment, and the field eradiation current-voltage curve is measured; one layer of field eradiation material of measured working function is formed on the surface of the carbon nanometer tube of the carbon nanometer tube field eradiation electron source; under the same condition of the same distance, the current-voltage curve of the carbon nanometer tube field eradiation electron source of the measured field eradiation material is measured; according to the Fowler-Nordheim equation and the current-voltage curve diagram which is measured, the Fowler-Nordheim curve sketch diagram of electron eradiated from the field eradiation electron source can be measured; furthermore, the working function of the measured eradiation material can be measured.

A sensing apparatus for detecting fluid quality change using signals obtained from a fluid quality sensor for exposure to a fluid and a reference sensor positioned in a reference sensing means having a fluid trap section holding a part of the fluid. Sensing values obtained from the fluid quality sensor and the reference sensor are compared in determining an aging factor. An application of the sensing apparatus is an apparatus for detecting engine oil quality change in an engine system. With the sensing apparatus, a first aging factor can be calculated after an engine cold soak and a second one can be obtained during engine operation. With these two aging factors, in addition to oil quality change, failures in the engine system and sensors, and oil change events can also be detected. Additionally, since reference sensing values are provided by the reference sensor, power disconnections have least effects.

A micromachined probe apparatus and methods for making and using same to characterize liquid in a fluidic channel and map embedded charge in a sample on a substrate are provided. The probe apparatus includes an integrated scanning tip and a dither actuation mechanism. The actuation is achieved using a bent-beam electrothermal actuator, and the probe tip is insulated from the actuator with a wide isolation gap. The device is fabricated by a modified micro electro-discharge machining process which allows electrical isolation within the micromachined structure using an epoxy plug. The apparatus may be used to measure changes in the external surface potential of a microfluidic channel as a function of varying pH of liquid inside the channel. The apparatus also may be used to map embedded charge in a thin layer on a substrate, showing it to be suitable for monitoring microelectronics manufacturing processes.

There is provided a system and process for detecting biomolecular interaction on a substrate having a biomolecule immobilized on a surface of the substrate. The system and process incorporate a scanning Kelvin microprobe (SKM) capable of analyzing surface topography as well as a contact potential difference image signal. Also provided is the use of SKM in measuring and analyzing biochemical molecular interactions between a probe bound to the surface of the substrate, and a target suspected to be present in a liquid sample. One of the probe and target combination is a biomolecule such as a nucleic acid, a polypeptide, or a small molecule, and an antibody antigen combination may be used.

A method and system for identifying a defect or contamination on the surface of a semiconductor or in a semiconductor. The method and system involves providing a semiconductor with a surface, such as a semiconductor wafer, providing a non-vibrating contact potential difference sensor, providing a source of illumination with controllable intensity or distribution of wavelengths, using the illumination source to provide controlled illumination of the surface of the wafer under or near the non-vibrating contact potential sensor probe tip, using the non-vibrating contact potential difference sensor to scan the wafer surface during controlled illumination, generating data representative of changes in contact potential difference across the wafer surface, and processing that data to identify a pattern characteristic of a defect or contamination.