77 results about "Electron paramagnetic resonance" patented technology

ESR microscope systems and methods for examining specimens using both continuous wave and pulsed modes in the 9 to 60 GHz range. The ESR microscope uses an image probe comprising gradient coils in addition to conventional modulation coils (in continuous wave mode) or magnetic field bias coils (in pulse mode), and a resonator constructed from high permittivity material. The systems and methods also involves the use of sample containers that permit the precise placement of samples in relation to the image probe. The microscope uses a microstrip or thin coaxial or dielectric antenna to obtain a high coupling coefficient to the specimen being imaged. The microscope systems provide resolution at the single micron level, and permit the observation of images comprising tens to hundreds of pixels for each of two or three dimensions in a few minutes. Novel stable radicals used as the imaging media are also described.

A resonator system for electron spin resonance (ESR) is disclosed. The resonator system comprises: a generally planar resonator layer defining an open-loop gapped by a non-conductive gap in the layer, and a microwave feed, positioned configured for transmitting microwave to the resonator layer such as to concentrate, with a quality factor of at least 100, a magnetic field within an effective volume of less than 1 nL above the layer.

This invention concerns an electronic device for the control and readout of the electron or hole spin of a single dopant in silicon. The device comprises a silicon substrate in which there are one or more ohmic contact regions. An insulating region on top of the substrate. First and second barrier gates spaced apart to isolate a small region of charges to form an island of a Single Electron Transistor (SET). A third gate over-lying both the first and second barrier gates, but insulated from them, the third gate being able to generate a gate-induced charge layer (GICL) in the ESR line substrate beneath it. A fourth gate in close proximity to a single dopant donor gate atom, the dopant atom being encapsulated in the substrate outside the region of the GICL but close enough to allow spin-dependent charge tunnelling between the dopant atom and the SET island under the control of gate potentials, mainly the fourth gate. In use either the third or fourth gate also serve as an Electron Spin Resonance (ESR) line to control the spin of the single electron or hole of the dopant atom. In a further aspect it concerns a method for using the device.

A downhole micro MR analyzer for use in a wellbore, having a micro sample tube, a micro RF coil in close proximity to the micro sample tube, and one or more magnets disposed about the micro sample tube is disclosed. The micro MR analyzer can be used for nuclear magnetic resonance or electron spin resonance experiments to ascertain formation properties and chemical compositions.

A miniaturized instrument and method of using electron spin resonance spectrometry for measuring the degradation of lubricating fluids, and the like, that includes continuously passing a sample of such fluid through a resonating RF microwave cavity resonator during the application therethrough of a uniform slowly varying uniform magnetic field that is rapidly modulated and measuring the resulting phase modulation or amplitude modulation thereof to derive an electron spin resonance signal that directly senses the molecular changes in the fluid sample resulting from fluid degradation during operation of the vehicle, such as peroxy radicals in vehicle engine oil and the like.

A downhole micro MR analyzer for use in a wellbore, having a micro sample tube, a micro RF coil in close proximity to the micro sample tube, and one or more magnets disposed about the micro sample tube is disclosed. The micro MR analyzer can be used for nuclear magnetic resonance or electron spin resonance experiments to ascertain formation properties and chemical compositions.

A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a first gate insulating layer over the gate electrode layer, a second gate insulating layer being over the first gate insulating layer and having a smaller thickness than the first gate insulating layer, an oxide semiconductor layer over the second gate insulating layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The first gate insulating layer contains nitrogen and has a spin density of 1×1017 spins / cm3 or less corresponding to a signal that appears at a g-factor of 2.003 in electron spin resonance spectroscopy. The second gate insulating layer contains nitrogen and has a lower hydrogen concentration than the first gate insulating layer.

The invention relates to a system and method for measuring resonant frequency of near-field microwave resonator, which utilizes electron spin resonance and diamond nitrogen vacancy defect (NV color center) to pull the oscillation frequency and the intensity of the microwave to place the diamond in a static magnetic field. In the process, the microwave pulse frequency and the magnetic field intensity are changed to perform photodetection magnetic resonance and rabbi oscillation measurement, and a series of rabbi oscillation frequencies are obtained, from which the resonator resonance frequencyis extracted. The measuring system comprises an optical module, a microwave module, a magnetic field device, a diamond and a control device, wherein the diamond is embedded with a NV color core; theoptical module can generate and guide light to the diamond, and simultaneously detect the fluorescent signal emitted by the diamond. The microwave module can generate a microwave control field and load it onto the diamond. The magnetic field device can generate a static magnetic field. The invention can measure the resonant frequency and the effective magnetic field strength of the microwave resonator practically and accurately, has high precision, and can be used under near-field conditions.

Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance.

An instrument and method using electron spin resonance spectrometry for measuring the concentration of airborne soot particles, and the like, that includes continuously passing a sample of exhaust gas through a resonating RF microwave cavity resonator during the application therethrough of a uniform slowly varying uniform magnetic field that is rapidly modulated and measuring the resulting phase modulation or amplitude modulation thereof to derive an electron spin resonance signal that directly senses the concentration of carbon free radicals produced as a result of inefficient combustion of hydrocarbons during operation of the vehicle or boiler. A further invention is the use of this signal for feedback control of the engine or boiler operating parameters to minimize or substantially eliminate particulate matter emissions.

The gas barrier film of the present invention is a gas barrier film comprising a base material, and an inorganic thin film composed of a silicon oxide film formed on one or both surfaces of the base material, wherein radical density of the Pb center of the silicon oxide film observed by an electron spin resonance method (ESR method) is from 1×1016 to 1×1019 spins / cm3, or a gas barrier film comprising a base material, an inorganic thin film containing silicon oxide and the other metal component formed on one or both surfaces of the base material, wherein radical density of the Pb center of the silicon oxide in the inorganic thin film observed by an ESR method is from 13×1014 to 3×1017 spins / mol, and a laminate wherein at least one paper and / or plastic film is laminated on the gas barrier film.

The gas barrier film of the present invention is a gas barrier film comprising a base material, and an inorganic thin film composed of a silicon oxide film formed on one or both surfaces of the base material, wherein radical density of the Pb center of the silicon oxide film observed by an electron spin resonance method (ESR method) is from 1×1016 to 1×1019 spins / cm3, or a gas barrier film comprising a base material, an inorganic thin film containing silicon oxide and the other metal component formed on one or both surfaces of the base material, wherein radical density of the Pb center of the silicon oxide in the inorganic thin film observed by an ESR method is from 13×1014 to 3×1017 spins / mol, and a laminate wherein at least one paper and / or plastic film is laminated on the gas barrier film.

A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a first gate insulating layer over the gate electrode layer, a second gate insulating layer being over the first gate insulating layer and having a smaller thickness than the first gate insulating layer, an oxide semiconductor layer over the second gate insulating layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The first gate insulating layer contains nitrogen and has a spin density of 1×1017 spins / cm3 or less corresponding to a signal that appears at a g-factor of 2.003 in electron spin resonance spectroscopy. The second gate insulating layer contains nitrogen and has a lower hydrogen concentration than the first gate insulating layer.

Electric characteristics of a semiconductor device using an oxide semiconductor are improved. Further, a highly reliable semiconductor device in which a variation in electric characteristics with time or a variation in electric characteristics due to a gate BT stress test with light irradiation is small is manufactured. A transistor includes a gate electrode, an oxide semiconductor film overlapping with part of the gate electrode with a gate insulating film therebetween, and a pair of electrodes in contact with the oxide semiconductor film. The gate insulating film is an insulating film whose film density is higher than or equal to 2.26 g / cm3 and lower than or equal to 2.63 g / cm3 and whose spin density of a signal with a g value of 2.001 is 2×1015 spins / cm3 or less in electron spin resonance.

A method for gathering transient free radical generated by low temperature plasma discharge includes reacting transient gas phase free radial generated by low temperature plasma coronal discharge with spin gathering agent in solution to form spin additive matters under average electric field intensity of 4-10kv / cm, taking 0.1-0.2mL gathering solution after reaction and filling said solution in quarts sample bottle for carrying out detection by spin resonator, using ESR spectral line form of spin additive matters to confirm type of free radical and using spectral line signal intensity to confirm content of free radical.

This invention concerns an electronic device for the control and readout of the electron or hole spin of a single dopant in silicon. The device comprises a silicon substrate in which there are one or more ohmic contact regions. An insulating region on top of the substrate. First and second barrier gates spaced apart to isolate a small region of charges to form an island of a Single Electron Transistor (SET). A third gate overlying both the first and second barrier gates, but insulated from them, the third gate being able to generate a gate-induced charge layer (GICL) in the substrate beneath it. A fourth gate in close proximity to a single dopant atom, the dopant atom being encapsulated in the substrate outside the region of the GICL but close enough to allow spin-dependent charge tunnelling between the dopant atom and the SET island under the control of gate potentials, mainly the fourth gate. In use either the third or fourth gate also serve as an Electron Spin Resonance (ESR) line to control the spin of the single electron or hole of the dopant atom. In a further aspect it concerns a method for using the device.

A process for the production of polyacrylonitrile-base precursor fiber for carbon fiber production which comprises spinning a spinning dope containing a polyacrylonitrile-base polymer having a limiting viscosity of 2.0 to 10.0 in a concentration of 10 to 25% by weight by a wet spinning method or a dry-wet spinning method, subjecting the obtained fiber to drying and heat treatment, and then steam-stretching the resulting fiber, wherein the extrusion linear speed of the polyacrylonitrile-base polymer from spinnerets is 2 to 15m / min; and a carbon fiber which is produced by firing the polyacrylonitrile-base precursor fiber obtained by the process and which has a strand tensile modulus of 320 to 380GPa and a conduction electron density of 3.0*10<19> to 7.0*10<19>spins / g as determined by electron spin resonance.