Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Semiconductor device and manufacturing method thereof

a technology of semiconductor devices and manufacturing methods, applied in the direction of semiconductor devices, transistors, electrical devices, etc., can solve the problems of reducing the reliability of a semiconductor device which includes the transistor, and achieve the effects of reducing the oxygen vacancies improving reliability, and reducing the concentration of hydrogen in the oxide semiconductor film

Inactive Publication Date: 2015-01-06
SEMICON ENERGY LAB CO LTD
View PDF127 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0011]By performing heat treatment on the oxide semiconductor film at 450° C. or higher, hydrogen concentration can be significantly reduced; however, oxygen vacancies in the oxide semiconductor film are increased at the same time.
[0030]When impurity levels due to hydrogen and defect levels due to oxygen vacancies are reduced, a semiconductor device which includes a transistor using the oxide semiconductor film can have improved reliability.

Problems solved by technology

Change in electrical characteristics (e.g., threshold voltage) which results from operation of a transistor causes a reduction in reliability of a semiconductor device which includes the transistor.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

embodiment 1

[0055]In this embodiment, a transistor according to one embodiment of the present invention and a method for manufacturing the transistor will be described with reference to FIGS. 1A to 1C, FIGS. 2A to 2C, and FIGS. 3A to 3C.

[0056]FIG. 1A is a top view of a transistor according to one embodiment of the present invention. FIG. 1B is a cross-sectional view along dashed-dotted line A-B in FIG. 1A. Note that for simplicity, an interlayer insulating film 118, a gate insulating film 112, and the like are not shown in FIG. 1A.

[0057]The transistor illustrated in FIG. 1B includes a base insulating film 102 formed over a substrate 100; an oxide semiconductor film 106 formed over the base insulating film 102 and including a first region 106a, a second region 106b, and a third region 106c; the gate insulating film 112 formed over the oxide semiconductor film 106; and a gate electrode 104 overlapping with part of the third region 106c of the oxide semiconductor film 106 with the gate insulating ...

embodiment 2

[0128]In this embodiment, transistors having structures different from those of the transistors in Embodiment 1 and a method for manufacturing the transistors will be described with reference to FIGS. 4A to 4C, FIGS. 5A to 5C, FIGS. 6A to 6C, FIGS. 7A to 7C, and FIGS. 8A to 8C.

[0129]FIG. 4A is a top view of a transistor according to one embodiment of the present invention. FIG. 4B is a cross-sectional view along dashed-dotted line A-B in FIG. 4A. Note that for simplicity, an interlayer insulating film 218, a gate insulating film 212, and the like are not shown in FIG. 4A.

[0130]The transistor illustrated in FIG. 4B includes a base insulating film 202 formed over a substrate 200 and including a first region 202a and a second region 202b; an oxide semiconductor film 206 formed over the base insulating film 202 and including a third region 206a, a fourth region 206b, a fifth region 206c, and a sixth region 206d; the gate insulating film 212 formed over the oxide semiconductor film 206; ...

embodiment 3

[0188]In this embodiment, transistors having structures different from those of the transistors in Embodiments 1 and 2 and a method for manufacturing the transistors will be described with reference to FIGS. 9A and 9B and FIGS. 10A to 10C.

[0189]FIG. 9A is a top view of a transistor according to one embodiment of the present invention. FIG. 9B is a cross-sectional view along dashed-dotted line A-B in FIG. 9A. Note that for simplicity, a gate insulating film 312 and the like are not shown in FIG. 9A.

[0190]The transistor illustrated in FIG. 9B includes a base insulating film 302 over a substrate 300; an oxide semiconductor film 306 formed over the base insulating film 302; an electrode 316a and an electrode 316b formed over the oxide semiconductor film 306 and electrically isolated from each other; the gate insulating film 312 over the oxide semiconductor film 306, the electrode 316a, and the electrode 316b; and a gate electrode 304 provided over the gate insulating film 312 to overlap...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a semiconductor device and a manufacturing method thereof.[0003]Note that in this specification, a semiconductor device refers to any device that can function by utilizing semiconductor characteristics, and an electro-optical device, a semiconductor circuit, an electronic device, and the like are all semiconductor devices.[0004]2. Description of the Related Art[0005]A technique for forming a transistor by using a semiconductor film formed over a substrate having an insulating surface has attracted attention. The transistor is applied to a wide range of semiconductor devices such as an integrated circuit (IC) and an image display device (display device). A silicon-based semiconductor is widely known as a semiconductor applicable to the transistor. In recent years, an oxide semiconductor has attracted attention.[0006]For example, a transistor in which an amorphous oxide film containing ind...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(United States)
IPC IPC(8): H01L21/477H01L29/786
CPCH01L29/7869H01L29/66742H01L29/78603H01L29/42364
Inventor SASAKI, TOSHINARINODA, KOSEISATO, YUHEIENDO, YUTA
Owner SEMICON ENERGY LAB CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com