60 results about "Domino logic" patented technology

A domino logic circuit is configured to reduce power consumption. In a first embodiment, a sleep switch grounds the dynamic node during sleep mode. In a second embodiment, a low-swing circuit at the output reduces the output and keeper transistor gate voltage swings. A third embodiment combines those two techniques.

A system and method, for converting a voltage input from a low voltage source to a voltage output at a high voltage source using a domino logic circuit design. An embodiment provides a low to high voltage conversion system. The system includes: a pull-up transistor coupled to a high voltage source for charging a node, when a precharge signal is received; a low voltage source used for setting an input voltage; a pull-down network for discharging the node depending, at least in part, on the input voltage; and an output voltage determined from the node.

Circuits are provided for simultaneously reducing the subthreshold and gate oxide leakage power consumption in domino logic circuits. Sleep transistors and a dual threshold voltage CMOS technology may be utilized to place idle domino logic circuits into a low leakage state. The circuits may significantly lower the total leakage power as compared to the standard dual threshold voltage domino logic circuits at both the high and low die temperatures. The energy overheads of the circuit techniques may be low, justifying the activation of the proposed sleep schemes by providing net savings in total power consumption during short idle periods.

A logic gate includes a logic circuit having an input node and an output node, an enabling transistor coupled between a first power supply node and the output node, the enabling transistor adapted to couple the output node to the first power supply node during an evaluation phase in the logic gate, and a pre-charge transistor coupled between the output node and a second power supply node, the pre-charge transistor adapted to couple the output node to the second power supply node during a pre-charge phase in the logic gate.

An apparatus and method for a pseudo-dynamic latch are disclosed. A deracer circuit includes a first logic gate configured to receive a data signal from a domino logic circuit and to invert the data signal. A second logic gate is configured to receive the inverted data signal and an inverted select signal and to generate a select signal. Thus, the deracer circuit is configured to prevent the select signal from being high when a precharge edge of a data signal arrives.

An internal clock gating apparatus comprises a static logic block and a domino logic block. The static logic block is configured to receive a clock signal and a clock enable signal. The domino logic block is configured to receive the clock signal and a control signal from an output of the static logic block. The static logic block and the domino logic block are further configured such that an output of the domino logic block generates a signal similar to the clock signal in phase when the clock enable signal has a logic high state. On the other hand, the output of the domino logic block generates a logic low signal when the clock enable signal has a logic low state. Furthermore, the static logic block and the domino logic block can reduce the setup time and delay time of the internal clock gating apparatus respectively.

A domino logic circuit having a clocked precharge is disclosed. The domino logic circuit includes a precharge transistor, an isolation transistor, and multiple evaluate transistors. Connected to a power supply, the precharge transistor receives a clock input. The isolation transistor is connected to ground and also receives the clock input. Each of the input transistors, which are coupled between the precharge transistor and the isolation transistor, receives a signal input. The gate dielectric thickness of the evaluate transistors is less than the gate dielectric thickness of the precharge transistor.

Methods and arrangements for enhancing domino logic are disclosed. Embodiments include a keeper circuit to pull up a domino node in response an output of an output circuit when the domino node is at a high voltage and to stop pulling up the domino node before the output changes to a first logical output. Further embodiments include an accelerator circuit to pull down the domino node when the keeper circuit stops pulling up the domino node. The domino node may couple with a pre-charge circuit and be pre-charged to a high voltage during a first portion of a clock cycle. The domino node may also couple with a logic input circuit to pull down the domino node during a second portion of the clock cycle, causing the output circuit to change the output from low to high in response to logic signals.

A clockless return to state domino logic gate is disclosed responsive to multiple return to state input nodes. A domino circuit has a preset state in which it presets a preset node to a second state. The domino circuit switches to a latch state and switches an output node when the preset node is pulled to a first state. The domino circuit resets back to the preset state and switches the output node back to its default state when a reset node is pulled to the second state. An evaluation circuit pulls the preset node to the second state when the input nodes are in an evaluation state. An enable circuit enables a reset condition when the domino circuit is in its latch state. A reset circuit pulls the reset node to the first state after an evaluation event when the input nodes are no longer in the evaluation state.

An automatic method for assigning the clock phases on a domino datapath embedding static gates includes replacing domino cells on non-critical paths by a static equivalent cell, delaying the clock arrival on domino gates driven by static signals, ensuring that critical data never waits for the clock in the domino pipeline, ensuring that a domino data never goes to precharge, and therefore is lost before it is consumed, ensuring that the domino datapath operates at any speed below the maximum operating speed, ensuring that domino signals leaving the design through primary outputs of a static block are latched to prevent the precharge to overwrite the evaluated results, providing an optimal solution in terms of performance, area and power, defining some constraints that are checked and enforced by the downstream tools in order to guaranty the proper functionality of the design.

A high-speed domino logic with improved cascode keeper circuit uses an inverter delay element and an additional transistor to introduce a transition delay time and node isolation time to avoid the contest or “fight” between a first node and the keeper transistor in the event of a path to ground being created through the logic block portion of high-speed domino logic with improved cascode keeper circuit. The high-speed domino logic with improved cascode keeper circuits of the invention, in contrast to prior art domino logic circuits, can be designed to have high noise immunity and increased speed. In addition, since according to the invention, only a minimum of one new inverter and one new are required, the modification of the invention is space efficient and readily incorporated into existing designs.

A systematic method for single-rail domino logic circuits is provided, in which inverting and non-monotonic logic functions can be integrated into a pipelined system with almost zero overhead. This logic family, called Clock Logic (CL)-domino is functionally complete while tolerating skew and minimizing the number of clock phases that must be distributed. Simulation results for a CL-domino ALU at 1-GHz under high skew (1-FO4) conditions, shows a power reduction of 41% over the same ALU implemented in dual-rail skew-tolerant domino logic. This power reduction incurs no performance penalty over dual-rail techniques, although in some cases additional design effort is required.

The invention relates to the technical field of memories and particularly relates to a method for high-speed writing operation of a dynamic random access memory (DRAM). According to the method, a DRAM cell adopting a logical process is of a 2T gain cell structure and comprises a write-in tube Qw and a readout tube Qr, and an active area capacitor of the write-in tube Qw and a gate capacitor of the readout tube Qr constitute the storage capacitor of the cell. According to the method, in a writing circuit, a domino logic part is a drive circuit which executes the write-in operation of the cell, and evaluation tube sets M1-M4 of the domino logic part receive a cell read-out small signal and an outside write-in signal which are amplified by a sense amplifier respectively. When a writing drive enable signal (WPCH) is opened, the level of a domino logic prenode changes according to whether the evaluation tube sets M1-M4 are connected or not to enable the level of a wideband laser (WBL) of an output terminal of an inverter (INV) to swing, so that the write-in to the cell is completed. According to the method disclosed by the invention, the technical problems that as a non-logic process is adopted to produce capacitors of the traditional 1T1C DRAM, the application of the DRAM in embedded equipment is difficult, and the like can be solved.