The invention relates to the technical field of memories and particularly relates to a method for high-speed writing operation of a
dynamic random access memory (
DRAM). According to the method, a
DRAM cell adopting a
logical process is of a 2T
gain cell structure and comprises a write-in tube Qw and a readout tube Qr, and an active area
capacitor of the write-in tube Qw and a gate
capacitor of the readout tube Qr constitute the storage
capacitor of the
cell. According to the method, in a writing circuit, a
domino logic part is a drive circuit which executes the write-in operation of the cell, and evaluation tube sets M1-M4 of the
domino logic part receive a cell read-out small
signal and an outside write-in
signal which are amplified by a
sense amplifier respectively. When a writing drive enable
signal (WPCH) is opened, the level of a
domino logic prenode changes according to whether the evaluation tube sets M1-M4 are connected or not to enable the level of a
wideband laser (WBL) of an output terminal of an
inverter (INV) to swing, so that the write-in to the cell is completed. According to the method disclosed by the invention, the technical problems that as a non-logic process is adopted to produce capacitors of the traditional 1T1C
DRAM, the application of the DRAM in embedded equipment is difficult, and the like can be solved.