175 results about "Cobalt silicide" patented technology

Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a cobalt silicide material on a substrate is provided which includes treating the substrate with at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material over the silicon-containing surface, and depositing a copper material over the cobalt silicide material. In another embodiment, a metallic cobalt material may be deposited over the cobalt silicide material prior to depositing the copper material. In one example, the copper material may be formed by depositing a copper seed layer and a copper bulk layer on the substrate. The copper seed layer may be deposited by a PVD process and the copper bulk layer may be deposited by an ECP process or an electroless deposition process.

Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.

Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.

A first structure is formed, having a contact plug formed on the bottom of a first opening in an interlayer insulating film, a second opening formed through the interlayer insulating film to reach a semiconductor substrate, and a third opening formed through the interlayer insulating film to reach a polymetal gate electrode. A cobalt layer is deposited on the surface of the structure, and thermally treated to form a cobalt silicide layer on the surface of the contact plug and on the bottom face of the second opening. The structure is then treated to remove the cobalt, in the state in which the cobalt silicide layer is formed, with the use of a chemical solution capable of dissolving cobalt but not the polymetal.

A semiconductor process and apparatus uses a predetermined sequence of patterning and etching steps to etch an intrinsic polysilicon layer (26) formed over a substrate (11), thereby forming etched gates (62, 64) having vertical sidewall profiles (61, 63). While a blanket nitrogen implant (46) of the intrinsic polysilicon layer (26) may occur prior to gate etch, more idealized vertical gate sidewall profiles (61, 63) are obtained by fully doping the gates (80, 100) during the source/drain implantation steps (71, 77, 91, 97) and after the gate etch.

Embodiments are provided for a method to deposit barrier and tungsten materials on a substrate. In one embodiment, a method provides forming a barrier layer on a substrate and exposing the substrate to a silane gas to form a thin silicon-containing layer on the barrier layer during a soak process. The method further provides depositing a tungsten nucleation layer over the barrier layer and the thin silicon-containing layer during an atomic layer deposition process and depositing a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition process. In some examples, the barrier layer contains metallic cobalt and cobalt silicide, or metallic nickel and nickel silicide. In other examples, the barrier layer contains metallic titanium and titanium nitride, or metallic tantalum and tantalum nitride.

A method and apparatus are provided for forming cobalt on a silicon substrate containing native silicon oxide on the surface thereof wherein a modified vapor sputtering device is used. The vapor sputtering device is modified by providing an electrical circuit to ground whereby the wafer disposed in the device is electrically connected to the ground circuit. The ground circuit preferably contains a resistor therein to control wafer voltage and current flow from the wafer to ground. It has been found that providing a current flow from the wafer to ground and particularly in a ground circuit containing a resistor, provides an in-situ simultaneous cleaning of native oxide on the silicon surface and deposition of cobalt on cleaned silicon. The deposited cobalt containing substrate may then be readily annealed to form cobalt silicide evenly and uniformly across the desired regions of the wafer surface. A cobalt coated silicon substrate and an annealed cobalt silicide coated silicon substrate made using the method and apparatus of the invention are also provided as well as electronic components made using the cobalt coated silicon substrate.

A cobalt-containing film on a silicon-containing conductive region, and a titanium-rich capping layer is formed on cobalt-containing film. The atomic % ratio of titanium to other elements (if any) in the titanium-rich capping layer is more than one (1). The resultant structure is annealed so that cobalt of the cobalt-containing film and silicon of the silicon-containing conductive region react with each other to form a cobalt silicide film. When the formation of the cobalt-containing film is carried out at a high temperature, a diffusion restraint interface film is also formed.

By forming a buried nickel silicide layer followed by a cobalt silicide layer in silicon-containing regions, such as a gate electrode of a field effect transistor, the superior characteristics of both silicides may be combined so as to provide the potential for further device scaling without unduly compromising the sheet resistance and the contact resistance of scaled silicon circuit features.

A method and apparatus are provided for forming a silicide on a semiconductor substrate by integrating under a constant vacuum the processes of removing an oxide from a surface of a semiconductor substrate and depositing a metal on the cleaned surface without exposing the cleaned surface to air. The method and apparatus of the present invention eliminates the exposure of the cleaned substrate to air between the oxide removal and metal deposition steps. This in-situ cleaning of the silicon substrate prior to cobalt deposition provides a cleaner silicon substrate surface, resulting in enhanced formation of cobalt silicide when the cobalt layer is annealed.

In a semiconductor device having a cobalt silicide film, at least nickel or iron is contained in the cobalt silicide film for preventing the rise of resistance incidental to thinning of the film.

A fusible link formed on a semiconductor substrate. The fusible link comprises a silicide layer overlying a polysilicon layer. The fusible link is programmed to an open state by passing a current therethrough that opens the polysilicon and the silicide layers.

The present invention provides methods for forming cobalt silicide layers, including introducing a vaporized cobalt precursor onto a silicon substrate to form a cobalt layer. The vaporized cobalt precursor has the formula Co₂(CO)₆(R¹—C≡C—R²), wherein R¹ is H or CH₃, and R² is H, t-butyl, methyl or ethyl. The silicon substrate is thermally treated so that silicon is reacted with cobalt to form a cobalt silicide layer. Methods for manufacturing semiconductor devices including the cobalt silicide layers described herein and such devices are also provided.