31 results about "Memory formation" patented technology

The present invention relates to a method of identifying a gene or gene product associated with transcription dependent memory formation in an animal comprising the steps of: (a) administering to said animal sufficient small interfering RNA (siRNA) specific for the gene to inhibit gene function; (b) training said animal under conditions sufficient to induce transcription dependent memory formation in a normal untreated animal; and (c) determining the level of transcription dependent memory formation induced by the training of the treated animal. The present invention provides methods of using small interfering PNAs (siRNA) in hippocampus to identify genes and gene product whose inhibition affects contextual and temporal long-term (LTM) memory, but not short-term memory (STM).

The present invention relates to compounds of formula (I):or a pharmaceutically acceptable salt, hydrate, solvate, or prodrug thereof, wherein U, J, V, X, R2a, R2b, R2c, R5 and t are as described herein. The present invention relates generally to inhibitors of histone deacetylase and to methods of making and using them. These compounds are useful for promoting cognitive function and enhancing learning and memory formation. In addition, these compounds are useful for treating, alleviating, and / or preventing various conditions, including for example, neurological disorders, memory and cognitive function disorders / impairments, extinction learning disorders, fungal diseases and infections, inflammatory diseases, hematological diseases, and neoplastic diseases in humans and animals.

In accordance with the present invention, there are provided novel compounds that protect neurons and / or promote neuroregeneration and / or promote memory formation. Such compounds are useful for treatment of a variety of neural disorders and conditions. In another aspect of the present invention, there are also provided formulations containing one or more of the above-described compounds, optionally further containing additional neurologically active compound(s) and / or adjuvants to facilitate delivery thereof across the blood / brain barrier. In still another aspect of the present invention, there are further provided methods for treating a wide variety of neurological indications, e.g., acute neural injuries, chronic injuries, promoting memory formation, and the like.

A semiconductor technique is provided which can achieve both of lowered resistance in a logic formation region and reduced leakage current of the capacitor of a memory device. Source / drain regions (4) are formed in the upper surface of a semiconductor substrate (1) in a memory formation region and cobalt silicide films (9) are formed in the upper surfaces of the source / drain regions (4). Source / drain regions (54) are formed in the upper surface of the semiconductor substrate (1) in a logic formation region and cobalt silicide films (59) are formed in the upper surfaces of the source / drain regions (54). The cobalt silicide films (59) in the logic formation region are thicker than the cobalt silicide films (9) in the memory formation region.

In accordance with the present invention, there are provided novel compounds that have a variety of properties, i.e., antioxidant, anti-inflammatory, antiviral, antibacterial, and antifungal properties. Invention compounds, therefore, have the ability to impart a variety of beneficial physiological effects, e.g., to protect neurons and / or to promote neuroregeneration and / or to promote memory formation and / or to act as protein phosphatase or kinase inhibitors and / or to act as lipoxygenase inhibitors. Such compounds are useful for treatment of a variety of indications, including neurodegenerative diseases and conditions, diabetes, ischemia associated with heart disease, and memory deficit. In another aspect of the present invention, there are also provided formulations containing one or more of the above-described compounds, optionally further containing additional neurologically active compound(s) and / or adjuvants to facilitate delivery thereof across the blood / brain barrier. In still another aspect of the present invention, there are further provided methods for treating a wide variety of neurological indications, e.g., acute neural injuries, chronic injuries, promoting memory formation, and the like.

The invention belongs to the field of microelectronic technology, in particular to a method for eliminating forming voltage of CuxO resistive memory. The method comprises following steps: growing CuxO memory medium, and annealing in oxygen-deficiency environment such as N2, Ar, forming gas or vacuum to reduce the surface CuO to Cu2O, thus eliminating forming voltage of the memory during the first programming, reducing current and voltage of write operation, and preventing CuxO memory medium with resistance switch characteristics below the surface CuO layer from being damaged by high current. The method of the invention has the advantages of simple process, low cost and significantly improved fatigue characteristics of the CuxO resistive memory.

The present invention relates to compounds of formula (I) or a pharmaceutically acceptable salt, hydrate, solvate, or prodrug thereof, wherein X1, X2, X3, X4, X5, W1, W2, W3, and W4 are as described. The present invention relates generally to inhibitors of histone deacetylase and to methods of making and using them. In one aspect, the invention relates to selective HDAC3 inhibitors useful for protecting β-cells and improving insulin resistance. The selective HDAC3 inhibitors are also useful for promoting cognitive function and enhancing learning and memory formation. Compounds of the invention are useful for treating, alleviating, and / or preventing various conditions, including for example, a metabolic disorder such as type 1 or type 2 diabetes, dyslipidemias, lipodystrophies, liver disease associated with metabolic syndrome, polycystic ovarian syndrome, or obesity; inflammatory disease; neurological disorder; a memory or cognitive function disorder / impairment; an extinction learning disorder; fungal disease or infection; viral disease or infection such as HIV; hematological disease; liver disease; lysosomal storage disease; or neoplastic disease in humans or animals.

A resistive memory formation and test method is disclosed. A memory array comprises a plurality of resistive storage units; a processing module is used for sequentially providing a first formation voltage and a second formation voltage for the resistive storage units so as to enable the resistive storage units to switch from an insulation state to an impedance state; the processing module provides a reset voltage to the resistive storage units so as to transform the impedance state of the resistive storage units to first impedance; the processing module provides a set voltage to the resistive storage units so as to transform the impedance state of the resistive storage units from the first impedance to second impedance; and the set voltage is higher than the second formation voltage, and the second formation voltage is higher than the first formation voltage.

A semiconductor technique is provided which can achieve both of lowered resistance in a logic formation region and reduced leakage current of the capacitor of a memory device. Source / drain regions (4) are formed in the upper surface of a semiconductor substrate (1) in a memory formation region and cobalt silicide films (9) are formed in the upper surfaces of the source / drain regions (4). Source / drain regions (54) are formed in the upper surface of the semiconductor substrate (1) in a logic formation region and cobalt silicide films (59) are formed in the upper surfaces of the source / drain regions (54). The cobalt silicide films (59) in the logic formation region are thicker than the cobalt silicide films (9) in the memory formation region.

A semiconductor structure includes a static random access memory (SRAM) cell comprising a first pull-up MOS device, a first pull-down MOS device and a first pass-gate MOS device, a first metallization layer, and an inter-layer dielectric (ILD) underlying the first metallization layer, wherein the ILD comprises an upper portion and a lower portion, a first first-layer contact in the lower portion of the ILD and connecting at least two of the first pull-up MOS device, the first pull-down MOS device and the first pass-gate MOS device. The first first-layer contact is physically isolated from second layer contacts in the upper portion of the ILD. The semiconductor structure further includes a second first-layer contact in the lower portion of the ILD, and a second-layer contact having at least a portion on the second first-layer contact, wherein the second layer contact electrically connects the second first-layer contact.

A performance of a semiconductor device is improved. A film, which is made of silicon, is formed in a resistance element formation region on a semiconductor substrate, and an impurity, which is at least one type of elements selected from a group including a group 14 element and a group 18 element, is ion-implanted into the film, and a film portion which is formed of the film of a portion into which the impurity is ion-implanted is formed. Next, an insulating film with a charge storage portion therein is formed in a memory formation region on the semiconductor substrate, and a conductive film is formed on the insulating film.

The invention discloses a sound wave intervention memory enhancement system based on portable EEG equipment. The system comprises a specially-made EEG signal sound wave intervention instrument, a specially-made EEG signal analysis system, a sleep analysis algorithm and a sound wave audio. The working principle of the platform is as follows: 1, the specially-made EEG signal sound wave interventioninstrument collects brain waves of a user during sleep and transmits the brain waves to the specially-made EEG signal analysis system in real time; 2, the analysis system decodes and preprocesses theEEG signal, and judges the sleep stage of the user through a machine learning algorithm; 3, when the user enters a moderate deep sleep stage, the system calls sound waves with specific frequency and sends the sound waves to the intervening instrument for playing intervention, and the brain memory function is enhanced; and 4, when the user enters a non-moderate deep sleep stage, sending of the sound wave is stopped. According to the invention, the design is carried out based on the data characteristics of sleep EEG signals, and the principle that sleep slow-wave frequency sound waves can enhance the resonance of the brain spindle body so as to enhance the memory formation and consolidation is applied, so that the function of enhancing the brain memory during sleep is realized.

The invention relates to a memory formation method. The memory formation method comprises the following steps: providing a substrate, wherein a stacking structure is formed on the surface of the substrate; forming a grid line spacer groove in the stacking structure, wherein the grid line spacer groove penetrates through the stacking structure and then extends to the surface of the substrate; and forming a semiconductor layer in the grid line spacer groove, wherein the grid line spacer groove is filled with the semiconductor layer, the inside of the semiconductor layer is doped with doping atoms, and the grain size of the semiconductor layer can be reduced by the doping atoms. The grains of the semiconductor layers formed by the method are small, and the performance of a memory can be improved.

The invention relates to a method of manufacturing a semiconductor device. An improvement is achieved in the performance of a semiconductor device. Over a first insulating film formed over a main surface of a semiconductor substrate located in a memory formation region and having an internal charge storage portion and over a second insulating film formed over the main surface of the semiconductor substrate located in a main circuit formation region, a conductive film is formed. Then, in the memory formation region, the conductive film and the first insulating film are patterned to form a first gate electrode and a first gate insulating film while, in the main circuit formation region, the conductive film and the second insulating film are left. Then, in the main circuit formation region, the conductive film and the second insulating film are patterned to form a second gate electrode and a second gate insulating film.

To provide a semiconductor device having mix-loaded therein a nonvolatile memory cell and a field effect transistor at a reduced cost. A method of manufacturing a semiconductor device includes pattering a conductor film by using an additional mask that covers a gate electrode formation region of a memory formation region and exposes a main circuit formation region (field effect transistor formation region) and thereby forming a gate electrode of a nonvolatile memory cell in the memory formation region and then forming an n− type semiconductor region of the nonvolatile memory cell in a semiconductor substrate by ion implantation using the above-mentioned additional mask without changing it to another one.

The invention relates to the technical field of neurology, in particular to a neurology rehabilitation chair capable of promoting formation of leg memory, which comprises a chair body, an adjusting structure is mounted on the chair body, a transmission structure is mounted on the adjusting structure, a sliding structure is mounted on the chair body, a fixing structure is mounted on the adjusting structure, and the fixing structure is mounted on the sliding structure. A rotating structure is mounted on the seat body, and a protective structure is mounted on the seat body; by installing the adjusting structure on the seat body, the legs of a patient can be moved front and back, leg memory forming can be conveniently conducted on the patient, meanwhile, the legs of the patient can be moved front and back and can also be moved up and down through the transmission structure, and by installing the sliding structure on the seat body, adjustment can be conducted according to the height and the leg length of the patient; and the feet of the patient can be conveniently fixed through the fixing structure.

The invention discloses an intelligent storing and taking method and device for oil field downhole formation fluid. The method comprises the steps that the downhole formation fluid is drawn, and is detected in real time under a shaft; when the result shows that the downhole formation fluid is not true downhole formation fluid, the original state is maintained; when the result shows that the downhole formation fluid is true downhole formation fluid, the true downhole formation fluid is stored; after the true downhole formation fluid is fully stored, the redundant true downhole formation fluid is detected again in real time; and when the result determines that the downhole formation fluid is true downhole formation fluid again, the stored true downhole formation fluid is lifted to the earthsurface, and therefore a sample is obtained. The device is mainly composed of a first solenoid valve, a second solenoid valve, a downhole water content tester, a downhole sample storing cylinder and aone-way valve, wherein the a pipeline where the first solenoid valve is located is connected with a pipe where the second solenoid valve, the downhole sample storing cylinder and the one-way valve inparallel, and the pipeline connected in parallel is connected with the downhole water content tester in series. According to the intelligent storing and taking method and device, online real-time detection can be achieved, the effectiveness of sampling is enhanced, meanwhile, the true formation fluid is automatically recognized and stored, and sampling efficiency is improved.

The invention discloses a storage type stratum fracturing string shift measurement instrument. The storage type stratum fracturing string shift measurement instrument comprises a fracturing string base, an upper connector and a lower connector, wherein the upper connector and the lower connector are sheathed at the upper end and the lower end of the fracturing string base, a pressure resisting outer pipe is sheathed on the outer wall of the fracturing string base and along the lower end of the upper connector, and a pressure probe mounting base, a pressure sensor, a battery assembly and a circuit board, which are connected with one another, are sequentially arranged between the pressure resisting outer pipe and the fracturing string base which are connected in a sleeving way from the upper part to the lower part; a shift measurement device comprising an upper arm and a lower arm is arranged at the lower part of the pressure resisting outer pipe along the periphery of the fracturing string base; an arm unfolding device and an arm folding device are sequentially arranged at the lower part of the lower arm; a multi-pin socket for reading the measurement data of the instrument and a control switch for turning off / on the instrument are also arranged in the fracturing string base. Reliable experience data are provided for the formulation of a fracturing construction technology through the utilization of the measurement instrument as an underground stratum fracturing string shift measurement instrument which has the advantages of convenience in work and simplicity in operation and maintenance, so that the fracturing construction is more efficient and safer.

Methods have been developed for alleviating memory problems or psychiatric dysfunctions that have a memory formation component. These methods are based on the finding that a truncated form of an aPKCζ protein is intimately involved in memory formation in animals. This finding is also central to methods for determining drugs that will have an effect on memory formation or the memory formation component of psychiatric dysfunctions.

Disclosed herein are compositions and methods for enhancing T-cell activity by modulating a miRNA so as to improve T-cell therapies. Described herein is the discovery that miRNA (Iet7) regulates T cell responses (including both T-helpers and cytotoxic CD8 Lymphocyte (CTLs)). Described herein are compositions and methods to increase the cytotoxic activity of CTLs and improve cancer immunotherapies.