The invention relates to an enhanced HEMT
radio frequency device with a gate-drain composite step field plate structure, and a preparation method thereof. A p-GaN region is arranged on the surface of a
barrier layer, a gate is arranged on the p-GaN region, a gate step field plate is arranged on the side wall, facing a drain, of the p-GaN region, and a drain step field plate is arranged on the side wall, facing the p-type GaN region, of the drain. The step field plate comprises at least two sub-field plates, and the width of each sub-field plate is gradually reduced from top to bottom. Through the arrangement of the gate-drain composite step field plate, the
electric field distribution of the side, close to the drain, of the gate and the
electric field distribution of the side, close to the gate, of the drain are changed, the average
electric field intensity between the gate and the drain is improved, and the
voltage withstanding performance and reliability of the device are improved; and the p-GaN region is arranged below the gate, and the enhanced HEMT
radio frequency device has smaller gate-drain
capacitance and shows higher
cut-off frequency in combination with the gate-drain composite step field plate structure.