34results about How to "Stably form" patented technology

A vacuum deposition apparatus is used for deposit evaporated substance from evaporation sources (6a and 6b) on the desired position of a flexible substrate (1). While the flexible substrate (1) is carried using rollers in a vacuum, shutters (8a and 8b) are opened and closed to control the movement of the evaporated substance via openings. A film having a desired shape of pattern is formed on the flexible substrate (1) with higher controllability.

A linear lighting device may include: an installation rail including a housing and a power supply terminal, the housing being fixed to an installation object surface and having an accommodating space formed therein, the accommodating space having an open side in one surface thereof, the power supply terminal being disposed in the accommodating space of the housing in a length direction thereof; at least one linear lighting module including a power connection terminal and a light emitting device, the power connection terminal being electrically connected to the power supply terminal, the light emitting device being electrically connected to the power connection terminal, the linear lighting module being detachably coupled to the accommodating space of the housing; and a light transmissive cover detachably coupled to the housing so as to close the open side of the accommodating space of the housing.

The present invention relates to a toner which has good property such as fixability, coloring power, developability, durability, and environmental stability and so on. More specifically, the present invention relates to a color toner containing at least a binder resin, a colorant, and a wax, in which: a wax concentration of an extract obtained by dispersing the toner into n-hexane at a concentration of 15 mg / cm3 at 23° C. and by subjecting the resultant dispersion to extraction treatment at 23° C. for 1 minute is in the range of 0.080 to 0.500 mg / cm3; an average circularity of particles each having a circle-equivalent diameter of 3 μm or more in the toner is in the range of 0.925 to 0.965; and a content of the wax is in the range of 1 to 15 parts by mass with respect to 100 parts by mass of the binder resin.

Provided is a semiconductor device containing a silicon single crystal substrate 101, a silicon carbide layer 102 provided on a surface of the substrate, a Group III nitride semiconductor junction layer 103 provided in contact with the silicon carbide layer, and a superlattice-structured layer 104 constituted by Group III nitride semiconductors on the Group III nitride semiconductor junction layer. In this semiconductor device, the silicon carbide layer is a layer of a cubic system whose lattice constant exceeds 0.436 nm and is not more than 0.460 nm and which has a nonstoichiometric composition containing silicon abundantly in terms of composition, and the Group III nitride semiconductor junction layer has a composition of AlxGayInzN1-αMα (0≦X, Y, Z≦1, X+Y+Z=1, 0≦α<1, M is a Group V element except nitrogen).

Disclosed is a method of forming a PN diode and a method of manufacturing a phase change memory device using the same. Formation of a PN diode includes forming a first conductivity type region in a surface of a semiconductor substrate. A polysilicon layer doped with second conductivity type impurities is then deposited on the semiconductor substrate formed with the first conductivity type region. Forming a plurality of second conductivity type regions by etching the polysilicon layer doped with the second conductivity type impurities completes the PN diode. Since the P-regions of a PN diode are formed through the deposition and etching of a polysilicon layer doped with second conductivity type impurities rather than an SEG process, a uniformity of resistance in the PN diode can be obtained.

A multi-level optical writer for writing an image by illumination to an optical-write-type recording medium laid with a display layer having a memory nature and a photoconductive layer, the optical writer includs: a holding portion holding the optical-write-type recording medium; and a write section for writing a multi-level image to the display layer by illuminating, to the photoconductive layer, image light having optical dots different in size in accordance with a gray level.

A thin film forming method by a plasma discharging treatment under atmospheric pressure with a thin film forming apparatus which has a first discharging space for forming a functional thin film on a substrate, and a second discharge space for post-treating the substrate which formed the thin film. The first discharge space has a roller electrodes pair. The thin film forming method includes, a film forming process at the first discharge space which includes the steps of transporting the substrate by the roller electrodes; supplying discharging gas and thin film forming gas into the first discharging space; and generating a high frequency electric field between the roller electrodes. The post-treatment process includes the steps of introducing the substrate on which the functional film is formed; and supplying a discharging gas and post-treatment gas between the facing electrodes; and, generating a high frequency electric field between the facing electrode and the roller electrode.

In fabricating a capacitor of a semiconductor device, a first contact plug is formed in a plug contact hole formed by patterning a portion of a first interlayer insulating film formed on a substrate. A first barrier layer, a first polysilicon layer, and a second barrier layer are formed. A first contact hole is formed after sequentially patterning the second barrier layer, the first polysilicon layer, and the first barrier layer. A first dielectric layer is formed to have portions located at outside and bottom parts of the first contact hole. A second polysilicon layer is formed to have its portions located at portions except for the first contact hole. A second dielectric layer and a third polysilicon layer are formed. A second interlayer insulating film is formed after patterning the third polysilicon layer. The second interlayer insulating film, the patterned third polysilicon layer, the second dielectric layer, the second barrier layer, and the first polysilicon layer are selectively removed to form a second contact hole and a second contact plug, and then forming a metal wiring.

Disclosed is an oil-in-water type emulsion composition containing a physiologically acceptable salt of a tranexamate ester and a method for producing the same. An oil-in-water type emulsion composition containing a physiologically acceptable salt of a tranexamate ester can be obtained by preparing an oil phase including: A) a physiologically acceptable salt of a tranexamate ester; B) an amphiphilic substance; C) an oily substance; and D) water, a water-soluble organic solvent or a mixture thereof wherein the weight ratio of the ingredients A:B is in the range of 1:0.5 to 1:2.5, the weight ratio of the ingredients A:C is in the range of 1:1 to 1:5.0, and the weight ratio of the ingredients A:D is 1:0.2 to 1:5.0, and adding the oil phase to a water phase including E) water, a water-soluble organic solvent or a mixture thereof.

Provided is a method for producing a hot-dip Al-based metal-plated steel sheet including a plated layer having a surface on which fine spangle are stably formed. A method for producing a hot-dip Al-based metal-plated steel sheet, includes a composition adjusting step of adding a B-containing master alloy so as to adjust a composition of an Al-based hot-dip plating bath (3) containing aluminum as a main component, the composition being adjusted so that the Al-based hot-dip plating bath has a B concentration of not less than 0.005 mass % and a K concentration of more than 0 mass % and less than 0.0005 mass %, the K concentration being reduced in the Al-based hot-dip plating bath by supplying gas into the Al-based hot-dip plating bath so as to remove a suspended matter on a surface of the Al-based hot-dip plating bath.

An outer peripheral surface of the small-diameter step portion is formed with an engagement groove extending in a circumferential direction. The retainer plate has a plurality of engagement claws protruding radially inward from an inner periphery of the retainer plate defining the fitting hole and configured to be engaged to the engagement groove. In a state that the fitting hole is fitted to the small-diameter step portion, the engagement claws are formed by axially pressing the inner periphery of the retainer plate, including at least thickness reduction parts formed in advance at a peripheral edge between an inner peripheral surface of the fitting hole and a side surface of the retainer plate, and plastically deforming the inner periphery of the retainer plate so as to protrude radially inward, and the engagement claws are engaged to the engagement groove.

Provided is a method of manufacturing a nanowire array using induced growth, in which a nitride inorganic nanowire is grown from a nitride seed by forming the nitride seed on a sapphire or silicon substrate, forming an organic nanowire pattern and a dielectric nanotunnel using the nanowire pattern as a template on the nitride seed, and using the nanotunnel as an induced growth mask.

A method for forming a film pattern by disposing a functional fluid on a substrate, includes: forming a partition wall that includes a first opening that corresponds to a first film pattern and a second opening that corresponds to a second film pattern; and disposing a droplet of the functional fluid into the first opening, so that the functional fluid is disposed into the second opening by a self-flow of the functional fluid; wherein: the first film pattern is linear; the second film pattern is narrower than the first film pattern, and is connected to the first film pattern at a rear edge thereof; and a front edge of the second film pattern has a missing part in which a corner of a rectangular contour is missing.