Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

31results about How to "Stable discharge characteristics" patented technology

Secondary cell comprising a positive electrode containing polyaniline and 4 diazo compound

The present invention is directed to a secondary cell having a positive electrode composed of polyaniline, wherein the positive electrode is formed by deriving an organic solution of polyaniline mixed with a diazo compound on a specific positive electrode collector. The invention also relates to a lithium ion secondary cell having a positive electrode composed of polyaniline and a diazo compound and a negative electrode composed of graphite, wherein the solvent of the electrolyte is a mixed solvent of ethylene carbonate, gamma -butyrolactone and 1,2-dimethoxyethane.
Owner:PIONEER CORP

Sputtering target material, silicon-containing film forming method, and photomask blank

Provided is a silicon target material in which particles are not easily generated during a sputtering process and to form a low-defect (high quality) silicon-containing film. A silicon target material having a specific resistance of 20 Ω·cm or more at room temperature is used for forming a silicon-containing film. The silicon target material may be polycrystalline or noncrystalline. However, when the silicon target material is single-crystalline, a more stable discharge state can be obtained. Also, a single-crystal silicon in which crystals are grown by an FZ method is a preferable material as a highly-pure silicon target material because its content of oxygen is low. Further, a target material having n-type conductivity and containing donor impurities is preferable to obtain stable discharge characteristics. Only a single or a plurality of silicon target materials according to the present invention may be used for sputtering film formation of the silicon-containing film.
Owner:SHIN ETSU CHEM IND CO LTD

Trench MOSFET integrated with ESD protection and manufacturing method thereof

PendingCN110518063AStable ESD discharge characteristicsStable ESD protection capabilitySolid-state devicesSemiconductor/solid-state device manufacturingBody regionTrench mosfet
The invention discloses a more excellent trench MOSFET integrated with ESD protection and a manufacturing method thereof. The trench MOSFET integrated with ESD protection comprises a voltage stabilizing diode formed by connecting a positive PN junction and a negative PN junction in series between a grid electrode and a source electrode of the MOSFET, wherein one end of the voltage stabilizing diode is connected with the grid electrode of the MOSFET, and the other end of the voltage stabilizing diode is connected with the source electrode of the MOSFET. The trench MOSFET integrated with ESD protection comprises a voltage stabilizing diode formed by connecting a positive PN junction and a negative PN junction in series between the grid electrode and a drain electrode of the MOSFET, wherein one end of the voltage stabilizing diode is connected with the grid electrode of the MOSFET, and the other end of the voltage stabilizing diode is connected with the drain electrode of the MOSFET. In the manufacturing method of the trench MOSFET integrated with ESD protection, a P-type doped region of the voltage stabilizing diode integrated in the trench MOSFET and a P-type body region of the MOSFET can be synchronously formed in process, and an N-type doped region of the voltage stabilizing diode and an N-type source region of the MOSFET can be synchronously formed in process, so that lower manufacturing cost is realized.
Owner:深圳市芯电元科技有限公司

Plasma display panel

A plasma display panel includes a first substrate and a second substrate facing each other to provide a discharge space between the first substrate and the second substrate, a scan electrode and a sustain electrode both provided on the first substrate, a dielectric layer for covering the scan electrode and the sustain electrode, and a protective layer provided on the dielectric layer. The protective layer includes magnesium oxide, magnesium carbide, and silicon. This plasma display panel performs stable discharge characteristics, such as a driving voltage, thereby displaying an image stably.
Owner:PANASONIC CORP

Sputtering target material, silicon-containing film forming method, and photomask blank

Provided is a silicon target material in which particles are not easily generated during a sputtering process and to form a low-defect (high quality) silicon-containing film. A silicon target material having a specific resistance of 20 Ω·cm or more at room temperature is used for forming a silicon-containing film. The silicon target material may be polycrystalline or noncrystalline. However, when the silicon target material is single-crystalline, a more stable discharge state can be obtained. Also, a single-crystal silicon in which crystals are grown by an FZ method is a preferable material as a highly-pure silicon target material because its content of oxygen is low. Further, a target material having n-type conductivity and containing donor impurities is preferable to obtain stable discharge characteristics. Only a single or a plurality of silicon target materials according to the present invention may be used for sputtering film formation of the silicon-containing film.
Owner:SHIN ETSU CHEM CO LTD

Plasma display panel

Each of the red, green and blue column electrodes has widened portions each having a row-direction width larger than that of the other portions. Each of the widened portions faces a head portion of each of the transparent electrodes of a pair of row electrodes constituting each row electrode pair. The widened portion of the green column electrode facing the green discharge cell provided with the green phosphor layer is located in a different position in the column direction from a position of each of the widened portions of the red and blue column electrodes respectively facing the red and blue discharge cells respectively provided with the red and blue phosphor layers.
Owner:PANASONIC CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products