Sputtering target material, silicon-containing film forming method, and photomask blank

Abstract

Provided is a silicon target material in which particles are not easily generated during a sputtering process and to form a low-defect (high quality) silicon-containing film. A silicon target material having a specific resistance of 20 Ω·cm or more at room temperature is used for forming a silicon-containing film. The silicon target material may be polycrystalline or noncrystalline. However, when the silicon target material is single-crystalline, a more stable discharge state can be obtained. Also, a single-crystal silicon in which crystals are grown by an FZ method is a preferable material as a highly-pure silicon target material because its content of oxygen is low. Further, a target material having n-type conductivity and containing donor impurities is preferable to obtain stable discharge characteristics. Only a single or a plurality of silicon target materials according to the present invention may be used for sputtering film formation of the silicon-containing film.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a technique for forming a silicon-containing film. More specifically, the present invention relates to a sputtering target material for forming a silicon-containing film, a method for forming a high-quality silicon-containing film using the same, and a photomask having the high-quality silicon-containing film.[0003]2. Description of the Related Art[0004]Recent years, in the field of semiconductor processing technology, the technology for miniaturization of a wiring pattern to constitute a circuit and miniaturization of a contact hole pattern for inter-layer wiring to constitute a cell has been increasingly desired because of miniaturization of a circuit pattern due to higher integration of large-scale integrated circuits. To meet such a demand, the wavelength of an exposure light used for photolithography is shortened from an i-line (365 nm) to a KrF excimer laser (248 nm). An ArF excime...

AI Technical Summary

Benefits of technology

The present invention provides a silicon target material with a high specific resistance and low dopant concentration. This allows for stable discharge characteristics regardless of the type and concentration of dopant. The use of a target material containing transition metals and silicon can further enhance the film formation process. The silicon-containing film can be formed using different target materials containing different transition metals, and the composition of the target material can be adjusted based on the desired film composition. The ratio and content of transition metals and light elements in the film can also be controlled by adjusting the target material and sputtering gas.

Problems solved by technology

When a sputtering target of the stand-alone silicon is used for forming a film, particles are generated during a sputtering process because the electrical conductivity of the target material is low and therefore particle defects are easily occurred on an obtained optical film.