It is a subject of the present invention to provide a
cleaning agent for a substrate having a
metal wiring, and a cleaning method for a
semiconductor substrate comprising that the
cleaning agent is used, by which following effects (1) to (5) are obtained, in a cleaning process after chemical mechanical
polishing (CMP) in a manufacturing process of a
semiconductor device. (1) Residues of fine particles (
polishing agents) used in the CMP process, fine particles (
metal particles) derived from a polished
metal, an anticorrosive, and the like, can be removed sufficiently. (2) A
coating film (protective film:
oxidation resistant film) on a surface of the metal wiring, containing a complex between an anticorrosive, such as
benzotriazole or quinaldic acid, and a surface metal of the metal wiring, formed in the CMP process, can be removed (stripped) sufficiently. (3) An
oxide film containing a metal
oxide can be formed after removal (stripping) of the
coating film. (4) A
semiconductor substrate can be obtained stably for a long period of time, without impairing flatness of the surface of the metal wiring (the surface of the
oxide film containing the metal oxide), even leaving a substrate after the cleaning process after the CMP. (5) It is hard to deteriorate even after using the
cleaning agent for a long period of time.The present invention relates to a cleaning agent for a substrate having a metal wiring, comprising an
aqueous solution containing (A)
carboxylic acid having a
nitrogen-containing heterocyclic ring and (B) alkylhydroxylamine, and having a pH of 10 or higher, as well as a cleaning method for a semiconductor substrate, comprising that the cleaning agent is used.