An object of the invention is to provide a processing method of a polishing pad for semiconductor wafer capable of forming a groove, a concave portion, a through hole and the like having a small surface roughness of the inner surface of the groove and the like of 20 mu m or less, a high dimensional accuracy and a uniform cross-sectional shape, and a polishing pad for semiconductor wafer. In the present processing method, a surface of a polishing pad comprising a water-insoluble matrix containing a crosslinked polymer and a water-soluble particle dispersed in the water-insoluble matrix is processed by cutting and the like. Additionally, when a groove and the like are formed, it is preferable that a polishing pad is placed on one surface side of a machining table having a sucking hole, the pad is fixed on the one surface side of the machining table by vacuuming sucking it from the other surface of the machining table, and then a groove and the like are formed.