34results about How to "Reduce implantation" patented technology

There are provided a method of manufacturing a semiconductor device which achieves a reduction in implantation masks, and such a semiconductor device. By implanting boron into NMOS regions using a resist mask and another resist mask as the implantation masks, p-type impurity regions serving as the halo regions of access transistors and drive transistors are formed. By further implanting phosphorus or arsenic into a PMOS region using another resist mask as the implantation mask, n-type impurity regions serving as the halo regions of load transistors are formed.

An ion beam is rapidly switched off during ion implantation on detecting a beam instability. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun ion source or an RF ion source. The ion beam is scanned across a workpiece from a starting location toward an ending location. During the scanning, one or more beam characteristics are monitored, such as beam current, beam flux, shape, and the like. An instability is detected when one or more of the beam characteristics deviate from acceptable values or levels. The ion beam is rapidly turned off on the detected instability.

A method for forming a semiconductor device includes providing a substrate having at least a gate positioned thereon, forming at least a recess in the substrate adjacent to the gate, performing a first selective epitaxial growth (SEG) process to form a first epitaxial layer in the recess, performing an etching process to remove a portion of the first epitaxial layer to expose the substrate, and performing a second SEG process to form a second epitaxial layer on the first epitaxial layer.

The present invention is directed to a switch circuit and method to quickly enable or disable the ion beam to a wafer within an ion implantation system. The beam control technique may be applied to wafer doping repaint and duty factor reduction. The circuit and method may be used to quench an arc that may form between high voltage electrodes associated with an ion source to shorten the duration of the arc and mitigate non-uniform ion implantations. The circuit and method facilitates repainting the ion beam over areas where an arc was detected to recover dose loss during such arcing. A high voltage high speed switching circuit is added between each high voltage supply and its respective electrode to quickly extinguish the arc to minimize disruption of the ion beam. The high voltage switch is controlled by a trigger circuit which detects voltage or current changes to each electrode. Protection circuits for the HV switch absorb energy from reactive components and clamp any overvoltages.

An image sensor comprises a detector circuit (17) with detector diodes (3), which are reverse biased during image sensing. It is characterized in that the cathode voltage of the detector diodes is controlled by forward biasing detector circuit (17) diodes via the read circuit (20). The control diodes can be dedicated diodes or forward biased photodetector diodes. In the latter case, a picture is taken in several sequences.

A display capable of inhibiting a logic composition circuit from outputting a signal to a gate line or a drain line at unintentional timing is obtained. This display comprises a shift register circuit including a logic composition circuit portion constituted of a plurality of first conductive type transistors turned on with a first voltage supply source for receiving a first shift signal and a second shift signal and outputting a shift output signal by logically compositing the first shift signal and the second shift signal with each other. At least either a first shift register circuit portion or a second shift register circuit portion includes a reset transistor for resetting the voltage supply source of a node outputting the first shift signal or the second shift signal to a second voltage supply source not turning on the transistors of the logic composition circuit portion in response to a prescribed drive signal.

A display capable of inhibiting a logic composition circuit from outputting a signal to a gate line or a drain line at unintentional timing is obtained. This display comprises a shift register circuit including a logic composition circuit portion constituted of a plurality of first conductive type transistors turned on with a first voltage supply source for receiving a first shift signal and a second shift signal and outputting a shift output signal by logically compositing the first shift signal and the second shift signal with each other. At least either a first shift register circuit portion or a second shift register circuit portion includes a reset transistor for resetting the voltage supply source of a node outputting the first shift signal or the second shift signal to a second voltage supply source not turning on the transistors of the logic composition circuit portion in response to a prescribed drive signal.

The invention discloses a percutaneous transhepatic implanted multifunctional biliary drainage device. The percutaneous transhepatic implanted multifunctional biliary drainage device comprises a drainage tube, a flexible expansion stent, radioactive particle strips and a development mark part, wherein the flexible expansion stent is arranged at the right end part of the drainage tube; the radioactive particle strips are arranged on the flexible expansion stent; the development mark part is arranged on the drainage tube at two sides of the flexible expansion stent and is developed under imagingequipment; first drainage holes are formed in the drainage tube at the left side of the flexible expansion stent; and second drainage holes are formed in the drainage tube at the right side of the flexible expansion stent. The percutaneous transhepatic implanted multifunctional biliary drainage device has the advantages that the expansion stent is integrated on the drainage tube, a flexible airbag can expand an obstructive site while meeting bile drainage, and radioactive particles on the flexible airbag can carry out radiation therapy on tumor tissues at the obstructive site at the same time, so that the carrying time of patients is effectively shortened; the drainage tube can be linear and meets the requirements of bile drainage, obstruction expansion and tumor tissue treatment of single duct obstruction; and the drainage tube can be of a Y-shaped structure, and meets the treatment requirements of the patients with hilar biliary duct obstruction.

A display capable of inhibiting a logic composition circuit from outputting a signal to a gate line or a drain line at unintentional timing is obtained. In this display, at least either a first shift register circuit portion or a second shift register circuit portion includes a reset transistor for resetting the voltage supply source of a node outputting a first shift signal or a second shift signal to a second voltage supply source not turning on transistors of a logic composition circuit portion in response to an output signal received from a shift register circuit portion precedent thereto by at least two stages with respect to a scanning direction.

An elongated modular implant is provided which has a distal part and a proximal part both having a leading end and a trailing end, respectively. The trailing end of the distal part includes a tool engagement portion and the leading end of the proximal part includes a distal part engagement portion for an engagement with the tool engagement portion of the distal part. The implant further includes an assembly element for firmly coupling the distal part and the proximal part when the first tool engagement portion of the distal part engages the distal part engagement portion of the proximal part. The proximal part trailing end may also have a tool engagement portion identical to the trailing end of the distal part.

A display having a shift register circuit capable of suppressing increase of power consumption is provided. This display comprises a shift register circuit including a shift register circuit portion including a first circuit portion having a second transistor turned on in response to a first signal and a second circuit portion having a sixth transistor turned on in response to a second signal providing an ON-state period not overlapping with an ON-state period of the second transistor and an input signal switching circuit portion for switching the first and second signals supplied to the second and sixth transistors respectively.

A system for identifying unauthorized and / or misconfigured wireless access points (WAPs) in a communication network includes multiple network endpoints and multiple agents running on endpoints. The agents are adapted to periodically locate WAPs and to report located WAPs to a central entity. The system further includes a central entity operative to receive information from the agents regarding located WAPs, to determine whether at least a given one of the located WAPs needs to be probed, and to initiate active probing of located WAPs when it is determined that the given one of the located WAPs needs to be probed.

A method for modulating a work function of a semiconductor device having a metal gate structure including the following steps is provided. A first stacked gate structure and a second stacked gate structure having an identical structure are provided on a substrate. The first stacked gate structure and the second stacked gate structure respectively include a first work function metal layer of a first type. A patterned hard mask layer is formed. The patterned hard mask layer exposes the first work function metal layer of the first stacked gate structure and covers the first work function metal layer of the second stacked gate structure. A first gas treatment is performed to the first work function metal layer of the first stacked gate structure exposed by the patterned hard mask layer. A gas used in the first gas treatment includes nitrogen-containing gas or oxygen-containing gas.