The invention discloses a preparation method of
silicon nanowire arrays easy in realizing the large-area separation and belongs to the technical field of the nanometer
material technology and application. According to the preparation method,
silicon wafers are processed, and the
silicon wafers with the clean and
smooth surface are obtained; then, the silicon wafers are placed between two electrodes and are put into
etching liquid together with the electrodes for
etching reaction, and silicon
nanowire arrays with different lengths are obtained; a transverse
electric field which has the
electric field intensity being 150 to 220V / cm and is vertical to the
etching direction is added before 10 to 15 minutes of the etching completion until the reaction finishes; and finally,
nitric acid is used for removing sliver remained in the silicon
nanowire arrays,
hydrofluoric acid is used for removing oxidation
layers at the surface of the silicon wafers, and the silicon nanowire arrays easy in realizing the large-area separation are obtained. The preparation method has the advantages that the process is simple, the
repeatability is good, the flexible and controlled effects are realized, and the cost is low; and the additional transverse
electric field is introduced for the first time for preparing the silicon nanowire arrays easy in realizing the large-area separation, and the problems that the separation is difficult in the traditional silicon
nanowire array transfer, and the length is not uniform after the transfer are solved.