A method for preparing silicon nanowire arrays that are easy to separate in large areas

Abstract

The invention discloses a preparation method of silicon nanowire arrays easy in realizing the large-area separation and belongs to the technical field of the nanometer material technology and application. According to the preparation method, silicon wafers are processed, and the silicon wafers with the clean and smooth surface are obtained; then, the silicon wafers are placed between two electrodes and are put into etching liquid together with the electrodes for etching reaction, and silicon nanowire arrays with different lengths are obtained; a transverse electric field which has the electric field intensity being 150 to 220V / cm and is vertical to the etching direction is added before 10 to 15 minutes of the etching completion until the reaction finishes; and finally, nitric acid is used for removing sliver remained in the silicon nanowire arrays, hydrofluoric acid is used for removing oxidation layers at the surface of the silicon wafers, and the silicon nanowire arrays easy in realizing the large-area separation are obtained. The preparation method has the advantages that the process is simple, the repeatability is good, the flexible and controlled effects are realized, and the cost is low; and the additional transverse electric field is introduced for the first time for preparing the silicon nanowire arrays easy in realizing the large-area separation, and the problems that the separation is difficult in the traditional silicon nanowire array transfer, and the length is not uniform after the transfer are solved.

Description

technical field [0001] The invention belongs to the field of nanometer material technology and application technology, and in particular relates to a method for preparing a silicon nanowire array which is easy to separate in a large area. Background technique [0002] Silicon nanowire arrays have been widely used in optoelectronic devices, sensors, electronic devices and other fields due to their excellent photoelectric properties, surface active properties and mechanical properties, and have become one of the most valuable host materials in these fields. In order to broaden the practical application range of silicon nanowire arrays and highlight the intrinsic properties of silicon nanowire arrays, the construction of many devices requires the transfer of large-area silicon nanowire arrays from silicon substrates to non-silicon substrates. People usually use contact printing technology to separate the nanowire array from the silicon substrate, but due to the strong bonding f...

AI Technical Summary

Problems solved by technology

People usually use contact printing technology to separate the nanowire array from the silicon substrate, but due to the strong bonding force between the silicon nanowire array and the bottom silicon substrate, a large mechanical force needs to be applied during the separation process, but the large effect Force inevitably destroys order and integrity of silicon nanowire arrays

In addition, it is difficult to obtain silicon nanowire arrays with uniform lengths due to the random break position of silicon nanowires during the separation process.

This directly affects the contact between the silicon nanowire array and the non-silicon substrate after transfer, which ultimately affects the performance of the device

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