30results about How to "Light receiving efficiency" patented technology

Disclosed is a backside illuminated image sensor including a light receiving element formed in a first substrate, an interlayer insulation layer formed on the first substrate including the light receiving element, a via hole formed through the interlayer insulation layer and the first substrate while being spaced apart from the light receiving element, a spacer formed on an inner sidewall of the via hole, an alignment key to fill the via hole, interconnection layers formed on the interlayer insulation layer in a multilayer structure in which a backside of a lowermost layer of the interconnection layers is connected to the alignment key, a passivation layer covering the interconnection layers, a pad locally formed on a backside of the first substrate and connected to a backside of the alignment key, and a color filter and a microlens formed on the backside of the first substrate corresponding to the light receiving element.

A solid-state image pickup device in which electric charges accumulated in a photodiode conversion element are transferred to a second diffusion layer through a first diffusion layer.

An optical display device, including a light guiding plate, a light detecting sensor and at least two illuminants. The light detecting sensor and the illuminants are commonly mounted on a wiring board with the at least two or more illuminants disposed to face a light incidence surface of the light guiding plate. The light detecting sensor is disposed on the same side of the wiring board as the illuminants with respect to the light guiding plate.

A solid-state imaging device includes: an imaging area in which light receiving portions are disposed; an interconnect layer disposed on the light receiving portions, the interconnect layer including metal interconnects having openings and first insulating films; inner-layer lenses formed over the interconnect layer in one-to-one relationship with the light receiving portions; a transparent second insulating film formed on the interconnect layer and the inner-layer lenses; top lenses formed on the second insulating film in one-to-one relationship with the light receiving portions, an upper face of each of the top lenses being a convexly curved face; and a transparent film on the top lenses, the transparent film being formed of a material having a refractive index smaller than a refractive index of the top lenses. In this way, a focal point of at least part of incident light can be situated above a semiconductor substrate.

A solid-state imaging device includes: an imaging area in which light receiving portions are disposed; an interconnect layer disposed on the light receiving portions, the interconnect layer including metal interconnects having openings and first insulating films; inner-layer lenses formed over the interconnect layer in one-to-one relationship with the light receiving portions; a transparent second insulating film formed on the interconnect layer and the inner-layer lenses; top lenses formed on the second insulating film in one-to-one relationship with the light receiving portions, an upper face of each of the top lenses being a convexly curved face; and a transparent film on the top lenses, the transparent film being formed of a material having a refractive index smaller than a refractive index of the top lenses. In this way, a focal point of at least part of incident light can be situated above a semiconductor substrate.

This stacked solar battery device includes a plurality of solar battery units 4, an enclosure case made of a metal plate to house these solar battery units 4 therein, a cover glass having a partial cylindrical lens formed. The plurality of solar battery units 4 are housed in a plurality of recesses of the enclosure case, and are sealed with a sealing material of synthetic resin. The solar battery unit 4 has a planar light receiving solar battery module 10, and rod light receiving solar battery modules 30 and 50 stacked so that the module having a shorter center wavelength of the sensitivity wavelength band is positioned closer to the incident side of the sunlight. The solar battery module 10 is configured so that five planar light receiving solar-battery cells 11 are connected in parallel with four connection rods 20a and 20b, and the sunlight modules 30 and 50 are configured so that five sub modules 31 and 51 are connected in parallel respectively with the connection rods 40a, 40b, 60a and 60b. The sub modules 31 and 51 are configured so that a plurality of rod-shaped solar battery cells 32 and 52 respectively are connected in series.

A LiDAR sensing device including: a sensing light source unit configured to radiate sensing light; a light transmitting reflector configured to reflect the sensing light radiated from the sensing light source unit; a scanner unit configured to reflect the sensing light reflected from the light transmitting reflector into a target, and to reflect incident light reflected from the target; a light receiving lens configured to pass the incident light reflected from the scanner unit, and integrated with the light transmitting reflector; a light receiving reflector configured to reflect the incident light passing through the light receiving lens; and an optical detecting unit into which the incident light reflected from the light receiving reflector is incident.

Provided are an optical device that is a small and thin optical device including a redistribution layer and has high light emitting efficiency and light receiving efficiency, and a method for manufacturing the optical device. An optical device includes: a photoelectric conversion element configured to include a semiconductor substrate, a semiconductor layer capable of receiving or emitting light, and electrodes; a sealing portion configured to expose a surface of the photoelectric conversion element on the opposite side to an electrode-formed surface of the photoelectric conversion element on which the electrodes are formed; a redistribution layer configured to include a reflecting portion disposed in a region in which, when viewed in plan, the semiconductor layer and the electrodes do not overlap each other and configured to reflect the light to a side on which the semiconductor layer is located; and external connection terminals configured to be coupled to the redistributions.