47results about How to "Increase gate capacitance" patented technology

A semiconductor device includes: a semiconductor substrate; multiple active regions of a first conductive type isolated from one another by shallow-trench isolation regions provided on one surface of the semiconductor substrate; multiple silicon pillars including channel silicon pillars formed in the active regions; multiple first semiconductor regions of a second conductive type that are respectively formed on bottom ends of the silicon pillars and to be sources or drains; multiple second semiconductor regions of the second conductive type that are formed on top ends of the silicon pillars and to be sources or drains; multiple gate insulating films surrounding the silicon pillars; and multiple gate electrodes surrounding the gate insulating films. At least one of the channel silicon pillars has a height different from that of another one of the channel silicon pillars.

The invention discloses a method for forming an interfacial passivation layer on the Ge semiconductor. The supercritical CO₂ fluids is used to form an interfacial passivation layer between Ge channel and gate insulator layer, and improve the dielectric characteristics of gate insulator after high-temperature thermal annealing process.

A field-effect transistor with improved moisture resistance without an increase in gate capacitance, and a method of manufacturing the field-effect transistor are provided. The field-effect transistor includes: a T-shaped gate electrode on a semiconductor layer; and a first highly moisture-resistant protective film including one of an insulating film and an organic film having high etching resistance, the first highly moisture-resistant protective film being located above the T-shaped gate electrodes over all of a region in which the T-shaped gate electrode is located. A cavity is located between the semiconductor layer and the first highly moisture-resistant protective film below a canopy of the T-shaped gate electrode. An end surface of the cavity is closed by a second highly moisture-resistant film.

A non-volatile semiconductor memory device which simultaneously possesses a non-volatile memory cell region which possesses an isolating insulation film which has been formed selectively within a semiconductor substrate, which also possesses a first electroconductive film (floating gate electrode) via a first gate insulating film which has been formed on the semiconductor substrate surface, and which also possesses a metal film (control gate electrode) via a second gate insulating film which has been formed above said electroconductive film and a peripheral transistor region which possesses a metal film (gate electrode) via a third gate insulating film which has been formed above the semiconductor substrate surface.

The invention relates to a gallium nitride based high electron mobility transistor with a composite metal gate. The gallium nitride based high electron mobility transistor comprises a substrate, a gallium nitride buffer layer, an aluminum nitride inserting layer, an aluminum-indium-gallium-nitrogen barrier layer, and a source electrode, a drain electrode and a grid electrode on the aluminum-indium-gallium-nitrogen barrier layer, wherein the source electrode and the drain electrode form ohmic contact with the aluminum-indium-gallium-nitrogen barrier layer; the grid electrode and the aluminum-indium-gallium-nitrogen barrier layer form Schottky contact; the grid electrode on the aluminum-indium-gallium-nitrogen barrier layer is formed by connecting more than two metals with different work functions. Through the utilization of the influence of a step barrier shielding drain potential formed between the grid metals with different work functions on device channels, the Drain Induced Barrier Lowering (DIBL) effect is inhibited, and the SCEs (Short Channel Effects) of deep submicron gallium nitride based high electron mobility transistor are improved, thus the current gain cut-off frequency fT is improved.

A semiconductor device includes active areas which are insulatedly separated from each other by element-separation insulating films; a gate insulating film formed on each active area; a gate electrode which extends across the active area via the gate insulating film; a source area and a drain area formed in the active area so as to interpose the gate electrode; and a fin-channel structure in which at the intersection between the active area and the gate electrode, trenches are provided at both sides of the active area, and part of the gate electrode is embedded in each trench via the gate insulating film, so that the gate electrode extends across a fin which rises between the trenches. In the gate insulating film, the film thickness of a part which contacts the bottom surface of each trench is larger than that of a part which contacts the upper surface of the fin.

The invention belongs to the technical field of integrated circuit memories, and particularly relates to a high-erasing-speed semi-floating-gate memory and a preparation method thereof. The semi-floating-gate memory comprises a silicon-containing semiconductor substrate having a first doping type, a semi-floating-gate well region which has a second doping type, and a U-shaped groove which penetrates through the semi-floating-gate well region, wherein the bottom of the U-shaped groove is located at the lower boundary of the semi-floating-gate well region; a first gate dielectric covers the surface of the U-shaped groove, and an opening is formed in the semi-floating-gate well region; a floating gate covers the first gate dielectric, and a metal silicide is formed in the semi-floating-gate well region below the opening; a second gate dielectric layer wraps the floating gate, and a control gate covers the second gate dielectric layer; gate side walls are positioned on the two sides of a first gate stack and a second gate stack; and a source region and a drain region have a second doping type and are positioned on two sides of the first gate stack and the second gate stack. According to the invention, the erasing speed of the memory can be increased, the contact resistance of the source electrode of a tunneling transistor is obviously reduced, the driving current of the tunneling transistor is increased, and the erasing speed of the memory is further increased.

The invention relates to an enhanced GaN-based MIS-HEMT device and a preparation method thereof. In the MIS-HEMT device, a concave AlGaN barrier layer is arranged on the basis of a thin AlGaN barrierlayer, so that the channel mobility is improved, and the on resistance is improved. On the basis, an electron beam evaporation (EBE) method is adopted to grow a mask layer and is combined with an SAGmethod, compared with a PECVD mask used in a conventional process, the adoption of the EBE for growing the mask completely eliminates plasma damage in the mask technology, and damage-free crystal lattices are reserved for a thin AlGaN/GaN heterojunction. Meanwhile, the Al component of the AlGaN thin barrier layer is different from the Al component of the concave AlGaN barrier layer, and the threshold voltage and the channel electron mobility are further improved. In addition, a gate dielectric layer in the device is formed by stacking three oxide materials with different dielectric constants,the thickness of the dielectric layer is increased to ensure a certain threshold voltage, and the gate capacitance is increased by means of increasing the dielectric constant, so that the transconductance value is prevented from being too low.

Methods are disclosed for semiconductor device fabrication in which dopants are selectively implanted into transistor gate structures to counteract or compensate for dopant depletion during subsequent fabrication processing. A patterned implant mask is formed over a semiconductor device, which exposes at least a portion of the gate structure and covers the remaining upper surfaces of the device. Thereafter, dopants are selectively implanted in to the exposed gate structure.

The present invention provides an organic gate insulator (OGI) layer having a low dielectric constant (k), said organic gate insulator layer being over-coated with a cross-linked organic layer (OSPL) having a relatively high permittivity (k). The present invention also provides an electronic device comprising such an organic thin film transistor. The invention also provides a solution for producing said OSPL, and a process for producing said OSPL.

Methods are disclosed for semiconductor device fabrication in which dopants are selectively implanted into transistor gate structures to counteract or compensate for dopant depletion during subsequent fabrication processing. A patterned implant mask is formed over a semiconductor device, which exposes at least a portion of the gate structure and covers the remaining upper surfaces of the device. Thereafter, dopants are selectively implanted into the exposed gate structure.

The rectifier circuit includes: three terminals A, K, VR; voltage comparator including a positive input terminal, a negative input terminal, and a comparative output terminal; current switching unit including source terminal, drain terminal, and control terminal; first switching unit that conducts or cuts off between source terminal and control terminal of the current switching unit; second switching unit that conducts or cuts off between control terminal of the current switching unit and terminal VR; and reference voltage generator that uses terminal A and terminal VR as input terminals, and includes a voltage output terminal. The voltage output terminal of reference voltage generator is connected to the negative input terminal of the voltage comparator, terminal K is connected to the positive input terminal of voltage comparator, and current flow between first switching unit and second switching unit is exclusively allowed or interrupted by a signal output from the comparative output terminal of voltage comparator).

The invention provides a method for preparing a plasma nitrided gate dielectric layer. The method is characterized in that the method includes the steps of providing a substrate, forming a silicon dioxide layer on the substrate and doping nitrogen into a silicon oxide layer under the temperature condition of minus 100 degrees to 0 degree. With the nitrogen doped under the low temperature of minus 100 degrees to 0 degree; diffusion effect of nitrogen ions is reduced; more nitrogen ions gather on the upper surface of the silicon dioxide layer; more bonding between Si-O bond and nitrogen ions is interrupted; nitrogen content on the upper surface of the plasma nitrided gate dielectric layer is increased. Thus, not only is leakage current density reduced but also a high gate capacitance is provided. Furthermore, reliability of the device is improved, and B+ is inhibited from diffusing from gate polysilicon to gate oxide.