Intercalated Superlattice Compositions and Related Methods for Modulating Dielectric Property

Abstract

Compositions, methods of using inorganic moieties for dielectric modulation, and related device structures.

Description

[0001]This application is a continuation of and claims priority benefit from application Ser. No. 11 / 642,504, filed on Dec. 20, 2006 and issued as U.S. Pat. No. 7,678,463 on Mar. 16, 2010, which claims priority to provisional application Ser. No. 60 / 751,861 filed on Dec. 20, 2005, each of which is incorporated herein by reference.[0002]This invention was made with government support under Grant No. N00014-05-1-0541 awarded by the Office of Naval Research and Grant No. NCC-2-1363 awarded NASA. The government has certain rights in the invention.[0003]The possibility of using small molecules and polymeric organic materials for applications in the electronic / semiconductor industry has been of great scientific and technological interest for several decades. Among the types of organic materials actively investigated have been conducting polymers for charge transporting (contact / electrodes) applications and as sensors / actuators, semiconductors as active components in field-effect / p-n devic...

AI Technical Summary

Benefits of technology

[0009]It can be an object of the present invention to provide an organic insulator material to reduce operating voltage in TFT and related device structures. In conjunction therewith, it can be another object of the present invention to provide such a material composition which increases the drain current of such a device while operating at low biases. Relating to one or more of the preceding objectives, it can also be an object of this invention to achieve such results by increasing the capacitance of a gate dielectric material.

[0021]A component-by-component, layer-by-layer modularity can provide for incorporation or intercalation of other structural and / or functional (e.g., optical, magnetic, mechanical) components or constituents during assembly. In accordance therewith and as described below, the dielectric and / or capacitance properties of a self-assembled organic component can be increased beyond what is possible for such organic materials of the prior art, thereby enabling simplified device design and performance enhancement. Accordingly, the present invention can also be directed to incorporation or intercalation of a metal / metal oxide component imparting or contributing a high k value to the resulting dielectric composition. In certain embodiments, and as described elsewhere herein, such incorporation can be achieved by depositing such a component or precursor thereto on an aforementioned siloxane moiety. However, as would be understood by those skilled in the art made aware of this invention, such components could be otherwise intercalated, substantially without adverse impact on the dielectric properties of such structures.

[0026]As demonstrated below, intercalation of one or more metal oxide layers, employing one or more of a variety of metal oxides, into self-assembled superlattices (SASs) can efficiently modulate the dielectric properties of a SAS dielectric, and the resulting films can be easily integrated into OTFT devices. The results support application of this invention not only in OFET technologies but also as capacitative elements in LC displays, supercapacitors, and other insulated field-effect devices.

Problems solved by technology

While carrier mobilities of organic semiconductors have now approached / surpassed those of amorphous Si, this has generally been achieved only at very large source-drain / source-gate biases, typically greater than 30-50 V. OTFT operation at such large biases will incur prohibitively excessive power consumption.

Further, in such devices, the semiconductor carrier mobility is gate bias dependent and increases when the gate voltage is increased.

Notwithstanding such concerns, the art remains somewhat lacking and the search continues for viable alternatives to SiO2 insulator materials.

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