The invention provides a
silicon heterojunction solar cell structure and a manufacturing method thereof. The structure comprises n-type
crystalline silicon, a p-type hydrogenated
amorphous silicon layer, an n-type hydrogenated
amorphous silicon layer, a first TCO (Transparent
Conductive Oxide) layer, a second TCO layer, an amorphous TCO layer, a
silver colloid layer and a buffer thin film layer, wherein both the front face and the back face of the n-type
crystalline silicon are passivated by using hydrogenated
amorphous silicon; the first TCO layer is positioned on the upper side of the p-type hydrogenated amorphous
silicon layer; the second TCO layer is positioned on the lower side of the n-type hydrogenated amorphous
silicon layer; the amorphous TCO layer is formed on a surface of the second TCO layer; the
silver colloid layer is grid-shaped; the buffer thin film layer is formed on a surface of the amorphous TCO layer through
sputtering. Compared with the prior art, the structure and the method have the advantages that the amorphous TCO layer is additionally arranged between the second TCO layer and the buffer thin film layer on one side of a back
electrode, and
silver oxide is formed by using the amorphous TCO layer and the sputtered Ag thin film, so that sputtered Ag and the amorphous TCO layer can react chemically to form an
oxygen-silver bond, and further the
welding strip tension during series
welding of a module is improved.