54results about How to "Improve substrate strength" patented technology

The present invention discloses a semiconductor package comprising a substrate having a plurality of substrate units, a plurality of semiconductor chips respectively disposed on the substrate units, and a plurality of conductive guard lines each disposed between two adjacent substrate units. Each substrate unit is provided with a plurality of contact pads and a plurality of conductive leads respectively connected to the corresponding contact pads. The semiconductor chips are electrically connected to the plurality of contact pads through the conductive leads. Each substrate unit has at least one of the contact pads electrically connected to the conductive guard lines such that the semiconductor package of the present invention can efficiently achieve the function of electrostatic discharge (ESD) protection.

An ultrasonic probe includes an element chip, a flexible wiring member and a control circuit. The element chip includes a substrate forming a plurality of openings arranged in an array pattern and a plurality of ultrasonic transducer elements disposed at the openings. The flexible wiring member is connected to the element chip, and forming at least a part of an annular body surrounding a space. The control circuit is connected to the flexible wiring member and electrically connected to the ultrasonic transducer elements via the flexible wiring member.

A manufacturing method of a semiconductor device 10 includes forming a plurality of second conductive second semiconductor regions at specific intervals on one main surface of a first conductive first semiconductor region, the plurality of second conductive second semiconductor regions being opposite to the first conductive first semiconductor region, forming a plurality of the first conductive third semiconductor regions on a main surface of the second semiconductor region, the plurality of the first conductive third regions being separated from each other, forming a plurality of holes at specific intervals on an another main surface which faces the one main surface of the first semiconductor region, the plurality of holes being separated from each other, forming a pair of adjacent second conductive fourth semiconductor regions which are alternately connected at a bottom part of the hole within the first semiconductor region, and burying an electrode within the hole.

A method of manufacture of a glass substrate for a magnetic recording medium, which has both high substrate strength and low alkaline elution, includes an etching process of etching the inner-edge face of a donut-shaped glass substrate having an aluminosilicate composition, formed by removing the center portion of a die-molded disc-shaped glass substrate, and an alkali sealing process of performing alkali sealing treatment by proton substitution of alkali ions in the surface layer of the etched donut-shaped glass substrate. The process is used to manufacture a magnetic recording medium incorporating a glass substrate having a total alkaline elution amount of less than 3.1 μg / disk, wherein the magnetic recording medium has a transverse rupture strength greater than 132 N.

In order to enable non-shrinkage firing, the strength of a multilayer ceramic substrate is increased which is obtained by a method in which alternately stacking a base material layer and a constrained layer which is not sintered at the sintering temperature for the base material layer, and in a firing step, allowing the material of the base material layer to flow into the constrained layer while subjecting the base material layer to sintering, thereby achieving densification of the constrained layer. The base material layer and the constrained layer each include celsian, and the abundance of celsian is lower in the base material layer than in the constrained layer. In order to increase the strength of the base material layer, the addition of a Ti component, rather than an increased content of Al component which interferes with sintering of the base material layer, causes fresnoite to be deposited in the base material layers. The presence of fresnoite in the base material layers increases crystal grain boundaries in the base material layers, and thus prevents cracking, thereby allowing the strength of the multilayer ceramic substrate to be improved.

A method and an electronic device structure comprising at least one access lead to adapted to be connected to an electrical circuit; at least one substrate region; at least one semiconductor die positioned on the substrate; the at least one semiconductor die being operatively connected to the at least one access lead; a dielectric region extending below the at least one semiconductor die; the dielectric region being formed by creating a cavity in the at least one substrate region; whereby the dielectric region operates to reduce electric field stresses produced by the at least one semiconductor die to thereby reduce the possibility of material failure and voltage breakdown. The method of making an electronic device structure comprises providing at least one substrate region; providing at least one semiconductor die located on the at least one substrate region; removing a portion of the at least one substrate region to provide a dielectric region within the substrate extending below the at least one semiconductor die; whereby the dielectric region within the at least one substrate region operates to reduce electric field stresses produced by the at least one semiconductor die to thereby reduce the possibility of material failure and voltage breakdown.