53results about How to "Improve chip reliability" patented technology

A package substrate, including a base layer, a surface circuit layer, a plurality of conductive bumps, and a patterned solder mask layer, is provided. The surface circuit layer having a plurality of bonding pads is disposed on a surface of the base layer. The conductive bumps are disposed on the bonding pads individually. The patterned solder mask layer is disposed on the surface of the base layer and outside a corresponding region occupied by the conductive bumps, so as to expose the conductive bumps. In addition, a method of fabricating the package substrate and a chip package structure employing the package substrate are also provided.

A chip with measuring reliability and a method thereof are provided. The present invention serially connects a resistor having a resistance equal to or a little more than a maximum resistance of the chip itself to the resistor R_s of the chip so as to compensate the resistance differences among chips. A noise to signal (N/S) ratio of the chip is decreased, and a measuring reliability of the chip is improved.

In a power-up signal generating device, a power-up signal is activated at a certain level of the power supply voltage VDD by adjusting the turn-on resistance value of the MOS transistor so that the chip reliability can be improved. The power-up signal generating device comprises a reference voltage generating unit, a bias level adjusting unit, a bias signal generating unit and a signal outputting unit. The reference voltage generating unit generates a reference voltage. The bias level adjusting unit receives the reference voltage as an input for controlling a voltage level of a bias signal in a constant level. The bias signal generating unit generates the bias signal under control of the bias level adjusting unit. The signal outputting unit outputs a power-up signal depending on the voltage level of the bias signal.

This invention provides a memory array and its peripheral circuit with byte-erase capability. The advantage of this invention is the ability to access bytes for program, erase, and read operations. This invention allows this access with the addition of one word line switch and one source line switch for each byte to be accessed for program, erase, and read operations. Also, this invention utilizes a new bias condition to lessen the voltage stress on the high voltage device. In addition, this invention utilizes separate and dedicated power supplies for the local word line driver circuits and for the local source line driver circuits. This is coupled with the partitioning of the main memory array into sub-arrays of 8 columns. This allows the placing of high voltage only on the selected 8 column (byte) subarray. This also substantially lessens the voltage stress on the memory cells and enhances long-term reliability.

A chip structure and the manufacturing process thereof are provided. The feature of the present application is that the chip structure has a first passivation layer covering a substrate of the chip and exposing each of bonding pads and a portion of the substrate surface, and a second passivation layer covering the sidewalls of the first passivation layer and the portion of substrate surface exposed by the first passivation layer, to prevent moisture infiltration from the edge of the substrate. Therefore, the reliability of the chip structure is enhanced.

A multi-chip stacked package structure, comprising: a lead-frame having a top surface a back surface, the inner leads comprising a plurality of first inner leads and a plurality of second inner leads in parallel; a first chip fixedly connected to the back surface of the lead-frame, and the first chip having an active surface and a plurality of first pads adjacent to the central area of the active surface; a plurality of first metal wires electrically connected the first inner leads and the second inner leads and the first pads on the active surface of the first chip; a second chip fixedly connected to the top surface of the lead-frame, and the second chip having an active surface and a plurality of second pads adjacent to the central area of the active surface; a pair of the spacers provided on the thermal fin of the lead-frame; a plurality of second metal wires electrically connected to the top surface of first inner leads and the second inner leads and the second pads on the active surface of the second chip; and a package body encapsulated the first chip, the plurality of metal wires the second chip, the plurality of pads, the first inner leads and the second inner leads and to expose the outer leads.

A chip package structure includes a redistribution layer, at least one chip, a reinforcing frame, an encapsulant and a plurality of solder balls. The redistribution layer includes a first surface and a second surface opposite to each other. The chip is disposed on the first surface and electrically connected to the redistribution layer. The reinforcing frame is disposed on the first surface and includes at least one through cavity. The chip is disposed in the through cavity and a stiffness of the reinforcing frame is greater than a stiffness of the redistribution layer. The encapsulant encapsulates the chip, the reinforcing frame and covering the first surface. The solder balls are disposed on the second surface and electrically connected to the redistribution layer.

A chip package and a fabrication method thereof are provided. The chip package includes a substrate and a chip disposed over the substrate. A solder layer is disposed between the chip and the substrate. A conductive pad is disposed between the solder layer and the substrate, wherein the conductive pad includes a first portion disposed under the solder layer, a second portion disposed away from the first portion and a connective portion disposed between the first portion and the second portion. The connective portion has a width which is narrower than a width of the first portion along a first direction perpendicular to a second direction extending from the first portion to the connective portion.

A semiconductor light emitting diode chip relates to the field of production technologies of a light emitting diode. In the present invention, corresponding graphical current extension layers are respectively disposed below an N pad and a P pad, and in all light emitting compound areas, there is electronic compound light emitting. Compared with the prior art, an area of a light emitting compound area is increased, which can effectively improve current distribution and light emitting brightness of a chip. In addition, graphical current extension can effectively increase an adhesion of a pad on a surface and improve the reliability of a chip.