Photo-sensitive element for electro-optical sensors realised with the
CMOS technology, comprising a photo-sensitive reception member (11, 31) consisting of a
diode connected to a conversion circuit to convert the current generated by the photo-sensitive reception member (11, 31) into a tension
signal, and an amplification and reading circuit (20, 40). The circuit comprises two transistors (21, 22; 41, 42), arranged in a
diode configuration with the drain short-circuited with its own gate, the two transistors (21, 22; 41, 42) being connected in series there between and able to perform a logarithmic conversion of the current, photo-generated by the reception member (11, 31), in continuous time and without requiring time to integrate the light. The photo-sensitive element further comprises a third
transistor (23, 43) having its gate connected to a photo-sensitive node (25, 45) at an output of the photo-
diode (11, 31) to achieve a first stage of amplification in current of the
signal by transferring the tension present on the node (25, 45) to the drain of a fourth
transistor (24, 44).