The invention discloses a photoetching method of a graphical
sapphire substrate. The method comprises the following steps: depositing a film on the graphical
sapphire substrate, and performing particle removing and low-temperature
drying processing on the film; under the condition that a rotation accelerated speed is not changed, adding a liquid-state
photoresist and an adhesion agent in the middle of a substrate film surface drop by drop, uniformly covering the surface of a
wafer with the liquid
photoresist, and performing baking so as to form a
photoresist membrane; projecting a graphic file on a
mask on the substrate photoresist membrane, setting an
exposure condition, and performing
exposure processing; and under the condition that the rotation accelerated speed is not changed, spraying a developing
solvent on the surface of the substrate photoresist membrane to perform development
processing, and after the development is completed, performing development examination. According to the invention, the method has the following advantages: the
exposure precision grade is high, the technical
repeatability is good, the line
dislocation density is low, the inner
quantum density is high, the resolution is high, the finished product qualified rate and the yield are high, the graphical dimension of an obtained finished product is accurate, the integrity is good, the performance is stable, and the application prospect is wide.