69results about "Non-electron-emitting control electrodes" patented technology

Vacuum microelectronic devices with carbon nanotube films, layers, ribbons and fabrics are provided. The present invention discloses microelectronic vacuum devices including triode structures that include three-terminals (an emitter, a grid and an anode), and also higher-order devices such as tetrodes and pentodes, all of which use carbon nanotubes to form various components of the devices. In certain embodiments, patterned portions of nanotube fabric may be used as grid/gate components, conductive traces, etc. Nanotube fabrics may be suspended or conformally disposed. In certain embodiments, methods for stiffening a nanotube fabric layer are used. Various methods for applying, selectively removing (e.g. etching), suspending, and stiffening vertically- and horizontally-disposed nanotube fabrics are disclosed, as are CMOS-compatible fabrication methods. In certain embodiments, nanotube fabric triodes provide high-speed, small-scale, low-power devices that can be employed in radiation-intensive applications.

The Present invention provides an organic EL display and a lighting device having high efficiency. The organic EL display comprises a substrate, a pixel-driving circuit unit, and pixels arranged in the form of a matrix on the substrate. The pixel comprises a light-emitting part, and the light-emitting part is composed of a first electrode placed near to the substrate, a second electrode placed far from the substrate, and at least one organic layer placed between the first and second electrodes. The second electrode has a metal electrode layer having a thickness of 10 nm to 200 nm, and the metal electrode layer comprises a metal part and plural openings penetrating through the layer. The metal part is seamless and formed of metal continuously connected without breaks between any points therein. The openings have an average opening diameter of 10 nm to 780 nm, and are arranged so periodically that the distribution of the arrangement is represented by a radial distribution function curve having a half-width of 5 nm to 300 nm.

A method of manufacturing an article with integral active electronic component comprising: using an additive manufacturing process to: a) form a non-electrically conductive substrate; b) form a non-electrically conductive perforated layer having an aperture; c) form electrically conductive anode and cathode elements spaced in the aperture; d) deposit a conductive electrical connection to each of the elements suitable for imparting an electrical potential difference between the elements; e) form a non-electrically conductive sealing layer atop the perforated layer so as to retain and seal the aperture in the perforated layer.

An energy converter according to the present invention includes a heat source (radiator 1), which receives externally applied energy and raises its temperature, thereby emitting electromagnetic radiations, and a radiation cut portion (mesh 2) for cutting down infrared radiations, of which the wavelengths are longer than a predetermined wavelength. The mesh 2 is a woven or knitted mesh of metal wires. The openings of the woven or knitted mesh have an aperture size that is smaller than the predetermined wavelength.

A metal grid is placed in the open end of a cup-shaped light bulb as a radiator to dissipate the heat generated from the light emitting device. One or more light emitting devices can be placed on the inner side surface of the metal grid, and the light emitted from the light emitting devices is reflected by the inner surface of the cup and transmitted through the windows in the metal grid. The horizontal plates of the metal grid and the vertical walls of the grid can be insulated from each other to serve as electrodes for the light emitting device. The cup can be back-filled with glass or other transparent polymer composite to prevent dust from entering the cup. Alternatively, a single light emitting device is place near the bottom of the cup

A high pressure discharge lamp which achieves a long life of at least 3000 hours and in which variations in lamp characteristics are suppressed is disclosed. In the high pressure discharge lamp of the present invention, during manufacturing of an electrode, a covering member 123 having a coil shape and being made of refractory metal is applied on a discharge side end of an electrode rod 122 made of refractory metal so as to cover a circumference of the electrode rod 122 in a vicinity of the discharge side end. The discharge side end 124 on which the covering member 123 is applied is fused into a semi-sphere by intermittently heat fusing the discharge side end according, for instance, to arc discharge or laser irradiation.

A solid-state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises cathode positioned near the opening of the cavity, wherein the cathode spans over the cavity in the form of a bridge that creates an air gap between the cathode and substrate. In addition, the SSVD further comprises an anode and a grid that is positioned between the anode and cathode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current received by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

The invention discloses a vertical type nano gap vacuum transistor with an extended gate structure and a preparation method thereof. The vertical type nano gap vacuum transistor includes an emitter, acollector, a gate and an oxide insulating layer, and the nano gap refers to distances between the collector and the emitter and between the gate and the emitter in a sub-100 nm scale. The vertical type nano gap vacuum transistor is advantaged in that dimensions of vacuum devices are compressed to the sub-100 nm scale, device processing requirements are similar to traditional semiconductor processes, a problem that traditional electric vacuum devices require complex machining and assembling is ameliorated, more importantly, and the possibility of realizing miniaturization and integration of vacuum components, integrated circuits and vacuum electronic systems in the future is provided.

An electron emission device includes: a substrate; first and second electrodes insulated from each other and having a predetermined shape on the substrate, at least one of the first and second electrodes being formed with a fine mesh pattern; and an electron emission region formed on the substrate and connected to one of the first and second electrodes. Furthermore, an electron emission display includes: first and second substrate arranged opposite to each other; first and second electrodes insulated from each other and having a predetermined shape on the first substrate, at least one of the first and second electrodes being formed with a fine mesh pattern; an electron emission region formed on the first substrate and connected to one of the first and second electrodes; and an image displaying portion including an anode electrode and a fluorescent layer arranged on the second substrate.

A cathode device comprising a plurality of emitter tips having conical tip end portions to emit electrons therefrom. A gate electrode layer has an opening through which the tip end portion of each of the emitter tips is exposed. The diameter of the opening in the gate electrode layer is made smaller than that of the portion of the emitter tip at the juncture thereof with the substrate. In the fabrication of the cathode device, an oxide layer is formed at least on the surface of the formed emitter tip to sharpen the latter. By removing the oxide layer, an inner circumferential wall of the opening of the gate electrode layer is formed on the outside of the conical tip end portion of the emitter tip and extends approximately in parallel to the conical tip end portion of the emitter tip.

The present disclosure relates to a field emission device. The field emission device includes a carbon nanotube structure and two electrodes electrically connected with the carbon nanotube structure. The carbon nanotube structure includes a carbon nanotube array, a carbon nanotube layer located on one side of the carbon nanotube array, and a carbon nanotube cluster between the carbon nanotube array and the carbon nanotube layer. The carbon nanotube array includes a number of first carbon nanotubes that are parallel with each other. The carbon nanotube layer includes a number of second carbon nanotubes. The carbon nanotube cluster includes a plurality of third carbon nanotubes that are entangled around both the plurality of first carbon nanotubes and the plurality of second carbon nanotubes.

One or more embodiments of the invention concern a device comprising: a cathode that lies on a cathode plane and includes, in an active region one or more cathode straight-finger-shaped terminals with a main extension direction parallel to a first reference direction; for each cathode terminal, one or more electron emitters formed on, and in ohmic contact with, said cathode terminal; and a gate electrode that lies on a gate plane parallel to, and spaced apart from, said cathode plane, does not overlap the cathode and includes, in the active region, two or more gate straight-finger-shaped terminals with a main extension direction parallel to the first reference direction; wherein the gate terminals are interlaced with said cathode terminal(s).