The invention discloses a high-sided transverse double diffused field effect transistor. The high-sided transverse double diffused field effect transistor comprises a P type substrate, an N- epitaxial layer, a P+ buried layer, a P+ P-N junction isolation, field oxygen, a P- top layer, P- body areas, a P- body area contact P+, an N+ source electrode, a gate oxygen layer, a polycrystalline silicon gate electrode and an N+ drain electrode, wherein the N- epitaxial layer is arranged above the P type substrate; the P+ buried layer and the P+ P-N junction isolation are arranged at one side of the N- epitaxial layer and are used to isolate different types of devices; furthermore, another P- body area is arranged between the P- body area and the P+ P-N junction isolation; the body area contact P+ is arranged in the P- body area; the P- top layer is arranged between the P- body area and the another P- body area. According to the high-sided transverse double diffused field effect transistor disclosed by the invention, an avalanche breakdown voltage between the source electrode and the substrate is greatly increased, that is, an isolation performance is greatly improved, so that application in the field which requires relatively high working voltage is satisfied.