High-sided transverse double diffused field effect transistor

Abstract

The invention discloses a high-sided transverse double diffused field effect transistor. The high-sided transverse double diffused field effect transistor comprises a P type substrate, an N- epitaxial layer, a P+ buried layer, a P+ P-N junction isolation, field oxygen, a P- top layer, P- body areas, a P- body area contact P+, an N+ source electrode, a gate oxygen layer, a polycrystalline silicon gate electrode and an N+ drain electrode, wherein the N- epitaxial layer is arranged above the P type substrate; the P+ buried layer and the P+ P-N junction isolation are arranged at one side of the N- epitaxial layer and are used to isolate different types of devices; furthermore, another P- body area is arranged between the P- body area and the P+ P-N junction isolation; the body area contact P+ is arranged in the P- body area; the P- top layer is arranged between the P- body area and the another P- body area. According to the high-sided transverse double diffused field effect transistor disclosed by the invention, an avalanche breakdown voltage between the source electrode and the substrate is greatly increased, that is, an isolation performance is greatly improved, so that application in the field which requires relatively high working voltage is satisfied.

Description

technical field [0001] The invention relates to the field of semiconductor power devices, in particular to a high-side lateral double-diffused field-effect transistor (LDMOS). Background technique [0002] Power integrated circuit PIC (Power Integrated Circuit) is a special integrated circuit that integrates power devices, control circuits, signal processing circuits, etc. into the same chip. As a branch of integrated circuits, PIC has always played a vital role. Compared with discrete devices, PIC not only has great advantages in terms of circuit performance, stability and power consumption, but also has great potential in reducing costs, reducing volume and weight. Because of these advantages, PIC is widely used in many application fields such as computer, communication and network, consumer electronics, industrial control and automotive electronics. The lateral double-diffused metal-oxide semiconductor (LDMOS) is widely used in power integrated circuit drive output stag...

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Problems solved by technology

Therefore, compared with the low-side LDMOS, there is another challenge in the structural design of the high-side LDMOS, that is, the high voltage between the source electrode and the substrate needs to be isolated to prevent breakdown and cause reliability such as noise and latch-up. question

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