The invention discloses a GaN-based
radio frequency device with a terminal structure and a manufacturing method of the device. The
radio frequency device comprises a substrate, a nucleating layer, a buffer layer, a channel layer and a
barrier layer, wherein the nucleating layer, the buffer layer, the channel layer and the
barrier layer are sequentially located at one side of the substrate. In the direction perpendicular to the plane where the substrate is located, the
barrier layer comprises a first surface away from the channel layer, the source
electrode and the drain
electrode are oppositely arranged at the two sides of the first surface, and the gate
electrode is located between the source electrode and the drain electrode. The
passivation layer is positioned at the side, far away from the substrate, of the barrier layer and comprises a first
passivation layer and a second
passivation layer; the first passivation layer comprises an anion injection region, and the
orthographic projection of the anion injection region is located between the gate electrode and the drain electrode in the direction perpendicular to the plane where the substrate is located, so that a
negative charge center can be generated in the first passivation layer, the peak of a gate pin
electric field is reduced, the
breakdown voltage of the device is improved, the leakage current is reduced, and the on-state characteristic of the device is improved.