30results about How to "Without lowering throughput" patented technology

An exposure apparatus that irradiates excitation laser onto a target, and generates from generated plasma a light source for generating illumination light of an extreme ultraviolet region or an X-ray region includes an illumination optical system that uses the illumination light to illuminate a catoptric reticle that forms a pattern to be transferred, the illumination optical system including a first mirror closest to the light source, an ellipsoidal mirror for condensing the illumination light in front of the first mirror in the illumination optical system, and a projection optical system that reduces and projects the pattern reflected on the reticle onto an object to be exposed, wherein light where an optical-axis direction of the excitation laser proceeds beyond a position that generates the plasma by the excitation laser does not interfere with components in the exposure apparatus including the illumination and projection optical systems, and the ellipsoidal mirror.

A substrate treatment apparatus is disclosed. The substrate treatment apparatus includes: a cassette loading portion on which a cassette for containing a substrate is loaded when the cassette is carried to / from outside of the substrate treatment apparatus; a substrate treatment portion for performing a treatment on the substrate; a substrate carrying portion for carrying the substrate in the cassette loaded on the cassette loading portion to the substrate treatment portion, and carrying the substrate that has been subjected to the treatment by the substrate treatment portion to the cassette on the cassette loading portion; a vacant cassette loading portion on which the cassette caused to be vacant by carrying the substrate to the substrate treatment portion is temporarily loaded; and a vacant cassette transfer mechanism for transferring the vacant cassette between the vacant cassette loading portion and the cassette loading portion.

The electrostatic chuck 101 where pairs of electrodes 3a / 3b, 4a / 4b and 5a / 5b to which voltages are applied are embedded in the main body 1, and where a substrate 110 is placed and held on the surface of the main body 1, includes a first electrode group constituted of one pair or more of electrodes 3a / 3b arranged in a center region 41 inside the main body 1, and a second electrode group constituted of one pair or more of electrodes 4a / 4b and 5a / 5b arranged in outer peripheral portions 42 and 43 surrounding the center region 41.

First feedforward calculation is executed when a preprocessing surface profile is measured and a processing chamber with its processing parameter value having been obtained through the first feedforward calculation judged to be within an allowable range is determined. Wafer transfer is executed only in conjunction with a processing chamber having a processing parameter value judged to be within the allowable range, and the wafer is carried to the entry point of the processing chamber. Then, second feedforward calculation is executed by reflecting the results of feedback calculation executed based upon the most recent processing having been executed in the particular processing chamber and wafer processing is executed in the processing chamber based upon the processing parameter value calculated in the second feedforward calculation.

Disclosed is a liquid chemical for forming a water repellent protective film on a wafer that has at its surface a finely uneven pattern and contains silicon element at least at a part of the uneven pattern, the water repellent protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains: a silicon compound (A) represented by the general formula R1aSi(H)b(X)4−a−b and an acid; or a silicon compound (C) represented by the general formula R7gSi(H)h(CH3)w(Z)4−g−h−w and a base that contains no more than 35 mass % of water. The total amount of water in the liquid chemical is no greater than 1000 mass ppm relative to the total amount of the liquid chemical. The liquid chemical can improve a cleaning step that easily induces pattern collapse.

Disclosed is a charged particle beam microscope which can obtain information about pattern materials and stereostructure without lowering throughput of pattern dimension measurement. To achieve this, the charged particle beam microscope acquires a plurality of frame images by scanning the field of view of the sample (S304, 305), adds the images together (S307), computes the dimensions of the pattern formed on the sample (308) and at the same time acquires pattern information (314) using components of a frame image, such as a single frame image or subframe image, as a separated image (309, 310).

An exposure apparatus includes a plurality of projection optical systems and a substrate stage. Each of the plurality of projection optical systems forms an exposure field on the substrate. The substrate stage holds the substrate and moves in at least a scanning direction extending in a straight line. The plurality of exposure fields are arranged along a direction crossing the scanning direction. The plurality of projection optical systems and the substrate relatively move during an exposure field forming operation along the scanning direction.

A plating apparatus includes a processing bath configured to store a processing liquid therein, a transporter configured to immerse a substrate holder, holding a substrate, in the processing liquid, raise the substrate holder out of the processing bath, and transport the substrate holder in a horizontal direction, and a gas flow generator configured to generate a clean gas flow forward of the substrate with respect to a direction in which the substrate holder is transported. The transporter moves the gas flow generator together with the substrate holder in the horizontal direction while transporting the substrate holder in the horizontal direction.

A surface treatment was conducted by using a liquid chemical containing a water-repellent protective film forming agent represented by the following general formula [1], subsequent to a step of cleaning a metal-based wafer and prior to a step of drying the wafer.(R1 represents a C1-C18 monovalent hydrocarbon group the hydrogen elements of which may partially or entirely be replaced with a fluorine element(s). R2 mutually independently represents a monovalent organic group having a C1-C18 hydrocarbon group the hydrogen elements of which may partially or entirely be replaced with a fluorine element(s). “a” is an integer of from 0 to 2.)