30results about How to "Reduce contact failure" patented technology

The semiconductor device includes a transistor and a capacitor element which is electrically connected to a gate of the transistor. Charge held in the capacitor element according to total voltage of voltage corresponding to the threshold voltage of the transistor and image signal voltage is once discharged through the transistor, so that variation in current flowing in the transistor or mobility of the transistor can be reduced.

A driving method of a semiconductor device for compensating variation in threshold voltage and mobility of a transistor is provided. A driving method of a semiconductor device including a transistor and a capacitor electrically connected to a gate of the transistor includes a first period where voltage corresponding to threshold voltage of the transistor is held in the capacitor, a second period where a total voltage of video signal voltage and threshold voltage is held in the capacitor holding the threshold voltage, and a third period where charge held in the capacitor in accordance with the total voltage of the video signal voltage and the threshold voltage in the second period is discharged through the transistor.

A pair of contact members 10, 10 coming into contact with both of a front-surface and an undersurface of a substrate 2 by elastic forces, comprise a pair of first contact points 11, 11 getting, when the substrate 2 is inserted, apart from each other due to a thickness of the substrate 2, resisting the elastic forces, and a pair of second contact points 12, 12 coming into, when the pair of first contact points 11, 11 are biased by the elastic forces in such a direction to get close to each other within a hole 21 opened at both of the front-surface and the undersurface of the substrate 2, contact with both of the front-surface and the undersurface of the substrate 2 in a way that interlocks with the first contact points 11,11.

To provide a method for driving a semiconductor device, by which influence of variation in threshold voltage and mobility of transistors can be reduced. The semiconductor device includes an n-channel transistor, a switch for controlling electrical connection between a gate and a first terminal of the transistor, a capacitor electrically connected between the gate and a second terminal of the transistor, and a display element. The method has a first period for holding the sum of a voltage corresponding to the threshold voltage of the transistor and an image signal voltage in the capacitor; a second period for turning on the switch so that electric charge held in the capacitor in accordance with the sum of the image signal voltage and the threshold voltage is discharged through the transistor; and a third period for supplying a current to the display element through the transistor after the second period.

A method for fabricating a semiconductor device includes: providing a substrate structure in which a plurality of gate lines are already formed; forming a capping layer over the substrate structure; oxidizing the capping layer; and forming an insulation layer over the oxidized capping layer. The capping layer may include a nitride-based material. The insulation layer may include substantially the same material as the capping layer. The oxidizing of the capping layer may comprise performing a radical oxidation process.

A cartridge includes a substrate and an engagement portion. The first surface faces a first direction and has a first surface on which an electrical terminal is disposed. The engagement portion includes a second surface disposed upstream from the substrate in the first direction and a third surface. The second surface faces a second direction, which forms an obtuse angle with the first direction. The third surface faces a third direction, which forms an acute angle with the first direction. The third surface does not overlap with the substrate in the first direction and the third surface is disposed downstream from the second surface in the first direction.

Disclosed are a display device and a method of manufacturing the same. In the disclosed display device, a pad cover electrode disposed on a pad area comes into contact with an upper surface and a side surface of a pad electrode since a planarization layer is disposed on an active area excluding the pad area, which may prevent contact failure between the pad cover electrode and a conductive ball. In addition, in the display device, a first electrode, which is connected to a thin film transistor via a pixel connection electrode, is formed via the same mask process as the planarization layer so that it has a line width similar to that of the planarization layer and overlaps the planarization layer, which may simplify a structure and a manufacturing process.

A novel display device capable of excellent reflective display is provided. The display device includes a transistor including a gate electrode layer, a gate insulating layer over the gate electrode layer, a semiconductor layer over the gate insulating layer, and a source electrode layer and a drain electrode layer over the gate insulating layer and the semiconductor layer; a reflective electrode layer on the same plane as the source electrode layer and the drain electrode layer; a coloring layer overlapping with the reflective electrode layer; a pixel electrode layer overlapping with the coloring layer; and an anti-oxidation conductive layer connected to one of the source electrode layer and the drain electrode layer. The pixel electrode layer is connected to the transistor through the anti-oxidation conductive layer.

The invention discloses a method for preparing a sulfur composite cathode material and an all-solid-state lithium-sulfur battery, wherein the method includes: mixing conductive carbon and a sulfide solid electrolyte by ball milling, and obtaining uniformly mixed conductor powder after sieving; In the high temperature zone of the vacuum tube furnace, the mixed conductor powder is placed in the low temperature zone of the vacuum tube furnace, and the sulfur vapor is evenly deposited in the churning mixed powder, and after cooling to normal temperature, the sulfur composite cathode material is obtained. The sulfur composite cathode material prepared by the present invention has a small particle size and a large specific surface area, and is in uniform and close contact with the mixed powder. The obtained all-solid-state lithium-sulfur battery has a small overall impedance, a high utilization rate of active materials, less capacity loss, and stable cycle performance. .

The invention provides a manufacturing method of a three-dimensional memory device and a device structure thereof. By optimizing the graphic design of a staircase divide scheme, the influence of lithography and etching processes on the graphical deformation and distortion of the staircase divide scheme is reduced, the effective contact area of the stair region is substantially increased, and the contact failure of the electrical connecting lines of 3D NAND is reduced.

A lens mounting apparatus includes a base including an opening, wherein a lens including a connection part is inserted and attached, an annular frame including a notch provided on a part of an outer periphery, a socket electrically connected to the connection part of the lens, and a first elastic member provided to urge the socket from the outer periphery toward a center of the annular frame. The annular frame is configured to fix the lens inserted and attached into the base by rotating the annular frame in one direction by a predetermined angle. When the annular frame does not fix the lens, the notch does not face the socket. When the annular frame fixes the lens, the notch faces the socket, and the socket is electrically connected to the connection part of the lens by an urging force of the first elastic member.

The invention relates to the technical field of high-voltage power distribution cabinets, and discloses a high-voltage power distribution cabinet for new energy vehicles, which includes a power distribution cabinet. The power distribution cabinet includes a cabinet body. The inner wall is fixedly connected with a dust-proof net, the front side of the cabinet body is connected with a cabinet body door through hinge rotation, the right end of the front side side of the cabinet body door is fixedly connected with a handle, and the front and rear ends of the right side of the cabinet body are provided with T-shaped chutes. The inner wall of the T-shaped chute of the cabinet is slidably connected with a T-shaped clamping rod, the right side of the T-shaped clamping rod is fixedly connected with the right cover plate, and the inner rear end of the cabinet is provided with a wire fixing device, which solves the problem of existing The electric cabinet does not have a special device for combing the wires, which makes the wires inside the distribution cabinet scattered and piled up easily to accumulate heat, and the surface of the wires will accumulate thick dust after long-term use, which is not easy to distinguish, making maintenance personnel When the electric cabinet is repaired, it is troublesome to find the wires.

In a semiconductor device and a method of manufacturing the same, a conductive structure is formed on an active region defined by a device isolation layer on a semiconductor substrate. The conductive structure includes a gate pattern and source / drain regions adjacent to the gate pattern. A first semiconductor layer is formed on the active region by a selective epitaxial growth (SEG) process. An amorphous layer is formed on the first semiconductor layer. A second semiconductor layer is formed from a portion of the amorphous layer by a solid-phase epitaxy (SPE) process. Elevated structures are formed on the source / drain regions by removing a remaining portion of the amorphous layer from the substrate, so the elevated structure includes the first semiconductor layer and the second semiconductor layer stacked on the first semiconductor layer. The device isolation layer may be prevented from being covered with the elevated structures, to thereby prevent contact failures.