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47results about How to "Interval becomes small" patented technology

Method for weighing items moving over a weighing plate in succession

In a method for weighing a number of items, such as letters to be franked, on a transport belt that moves over a weighing plate, the base of which is formed by the transport belt, the transport speed of the belt is slowed within a measurement time range, that starts from the beginning of a weighing event on the weighing plate until a stable weight measurement occurs, and is accelerated outside of this measurement time range, after the occurrence of a stable weight value for a current item on the weighing plate, the next-following item is transported onto the weighing plate by the belt, and the weight of the next-following item is determined by the weight increase due to inflow of the next-following item and the weight decrease due to outflow of the current item.
Owner:FRANCOTYP POSTALIA

Semiconductor laser device and method of manufacturing the same

This invention is to provide a semiconductor laser device with a small interval between light emitting points of laser lights and a method of manufacturing the same. A first light emitting element 1a having a semiconductor substrate 12a and a laser oscillation section 10a, and a second light emitting element 2a having a laser oscillation section 4a, are brought together with a ridged waveguide 8 of the laser oscillation section 10a facing the ridged waveguide 5 of the laser oscillation section 4a, and then bonded together by virtue of SOGs 3a having a small thickness. A conductive wiring layer Qa1 electrically connected with an ohmic electrode layer 9a on the ridged waveguide 8a, and a wiring layer Qa2 electrically connected with an ohmic electrode layer 6a on the ridged waveguide 5a, are arranged to extend until the insulating layer 11a on the semiconductor substrate 12a. Further, the ohmic electrodes Pa1 and Pa2 are formed on the bottom surface of the semiconductor substrate 12a and the top surface of the laser oscillation section 4a, respectively. In this way, when a drive current is supplied between the ohmic electrode Pa1 and the wiring layer Qa1, the laser oscillation section 10a will emit a light. On the other hand, when a drive current is supplied between the ohmic electrode Pa2 and the wiring layer Qa2, the laser oscillation section 4a will emit a light. In this manner, since the laser oscillation sections 4a and 10a are bonded together by virtue of SOGs 3a having a small thickness, it is allowed to form a semiconductor laser device with a small interval between light emitting points.
Owner:PIONEER CORP

LED module assemblies for displays

Disclosed is an LED module assembly for a display including a first LED module and a second LED module. The first LED module includes a first unit substrate, a plurality of LED chips mounted on the first unit substrate to form a plurality of pixels, and a first light absorbing layer formed on the first unit substrate. The second LED module includes a second unit substrate, a plurality of LED chips mounted on the second unit substrate to form a plurality of pixels, and a second light absorbing layer formed on the second unit substrate. The first unit substrate and the second unit substrate are laterally connected to each other. Each of the first light absorbing layer and the second light absorbing layer includes a plurality of valleys formed between the plurality of pixels. The first light absorbing layer includes a first inclined portion formed obliquely from the upper end edge of the interface between the first unit substrate and the second unit substrate to the upper portion of the side surface of each of the outer LED chips mounted on the first unit substrate. The second light absorbing layer includes a second inclined portion formed obliquely from the upper end edge of the interface between the first unit substrate and the second unit substrate to the upper portion of the side surface of each of the outer LED chips mounted on the second unit substrate. At least one of the plurality of valleys is formed by the first inclined portion and the second inclined portion meeting each other.
Owner:LUMENS

LED module assemblies for displays

Disclosed is an LED module assembly for a display including a first LED module and a second LED module. The first LED module includes a first unit substrate, a plurality of LED chips mounted on the first unit substrate to form a plurality of pixels, and a first light absorbing layer formed on the first unit substrate. The second LED module includes a second unit substrate, a plurality of LED chips mounted on the second unit substrate to form a plurality of pixels, and a second light absorbing layer formed on the second unit substrate. The first unit substrate and the second unit substrate are laterally connected to each other. Each of the first light absorbing layer and the second light absorbing layer includes a plurality of valleys formed between the plurality of pixels. The first light absorbing layer includes a first inclined portion formed obliquely from the upper end edge of the interface between the first unit substrate and the second unit substrate to the upper portion of the side surface of each of the outer LED chips mounted on the first unit substrate. The second light absorbing layer includes a second inclined portion formed obliquely from the upper end edge of the interface between the first unit substrate and the second unit substrate to the upper portion of the side surface of each of the outer LED chips mounted on the second unit substrate. At least one of the plurality of valleys is formed by the first inclined portion and the second inclined portion meeting each other.
Owner:LUMENS

Non-Volatile Semiconductor Memory and Manufacturing Process Thereof

InactiveUS20070205458A1Improve capacitanceImprove storage propertyTransistorSolid-state devicesSilicon nitrideCapacitance
A non-volatile semiconductor memory which can suppress a leak current, improve dielectric strength and ensure large capacitance between a control gate and a floating gate and a manufacturing process thereof. A silicon nitride film is formed on the floating gate electrode layer of a memory cell and has a thickness of 5 nm or more. A high dielectric constant thin film is formed on the silicon nitride film. A control gate electrode layer is formed over the high dielectric constant thin film.
Owner:RENESAS ELECTRONICS CORP
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