The invention provides a modeling method of a
microwave high-power
transistor. The modeling method comprises steps as follows: S1, a non-linear
equivalent circuit model of a small-size unit-
cell transistor is established; S2,
electromagnetic simulation software is used for simulating
microwave transmission characteristics of a passive component of a large-size
transistor, and an S parameter of an input structure and an S parameter of an output structure are acquired; S3,
thermal simulation software is used for simulating thermal transmission characteristics of the large-size transistor, parameter values of a thermoelectric
coupling parameter network are extracted according to
thermal simulation data, and the thermoelectric
coupling parameter network is acquired; S4, the non-linear
equivalent circuit model of the small-size unit-
cell transistor, the S parameter of the input structure, the S parameter of the output structure and the thermoelectric
coupling parameter network are connected according to a port corresponding relationship, and a large-size
transistor model is obtained.
Electromagnetic simulation data are used for describing the parasitic effect of an input-output structure, a gold wire, an isolation
resistor and the like of the large-size transistor,
thermal simulation data are used for extracting thermoelectric coupling parameters, the modeling precision is high, and the parameters are easy to extract.