Modeling method of microwave high-power transistor

Abstract

The invention provides a modeling method of a microwave high-power transistor. The modeling method comprises steps as follows: S1, a non-linear equivalent circuit model of a small-size unit-cell transistor is established; S2, electromagnetic simulation software is used for simulating microwave transmission characteristics of a passive component of a large-size transistor, and an S parameter of an input structure and an S parameter of an output structure are acquired; S3, thermal simulation software is used for simulating thermal transmission characteristics of the large-size transistor, parameter values of a thermoelectric coupling parameter network are extracted according to thermal simulation data, and the thermoelectric coupling parameter network is acquired; S4, the non-linear equivalent circuit model of the small-size unit-cell transistor, the S parameter of the input structure, the S parameter of the output structure and the thermoelectric coupling parameter network are connected according to a port corresponding relationship, and a large-size transistor model is obtained. Electromagnetic simulation data are used for describing the parasitic effect of an input-output structure, a gold wire, an isolation resistor and the like of the large-size transistor, thermal simulation data are used for extracting thermoelectric coupling parameters, the modeling precision is high, and the parameters are easy to extract.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a microwave high-power transistor modeling method. Background technique [0002] The device model plays a vital role in circuit design and acts as a bridge between circuit design and process design. As the operating frequency of the circuit enters the microwave and even higher frequency bands, the traditional experience-based design methods are increasingly unable to meet the requirements of circuit design, so it is becoming more and more important to obtain accurate device models. Having an accurate device model will not only improve the accuracy of circuit design and reduce process repetitions, but also reduce product costs and shorten the development cycle. [0003] Today, driven by the application requirements of higher current and higher power, the size of semiconductor transistors is constantly increasing, and large-size transistors are composed o...

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Problems solved by technology

[0005] The purpose of the present invention is to provide a microwave high-power transistor modeling method for the deficiencies of the prior art, which can well solve the problem of thermoelectric coupling when modeling large-scale semiconductor transistors in the prior art. Difficulty extracting parameters and parasitic parameters and low model accuracy

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