The invention provides a method for optimizing the shape of an
ion implantation region. The method includes the steps that a
semiconductor device substrate with a grid is provided; original oxidization
layers and
nitration layers are sequentially deposited on the surface of the
semiconductor device substrate, the top of the grid and the side walls of the grid; the
nitration layer on the top of the grid and the
nitration layer on the surface of the
semiconductor device substrate are subjected to over
etching so that side walls can be formed;
etching by-products are formed on the original oxidization
layers; the
semiconductor device substrate is cleaned with a wet method, and the etched by-products change into residual
oxide; the surfaces of the original oxidization layers with the residual
oxide or the whole original oxidization layers with the residual
oxide are removed, then, an oxidization layer is grown on the
semiconductor device substrate so that a new oxidization layer can be formed, and the new oxidization layer can replace the original oxidization layer to serve as a buffer layer for subsequent
ion implantation. According to the method, while the residual oxide can be effectively removed in a controllable mode, the
ion implantation quality is further improved, the shape of a subsequent
ion implantation region is optimized, the quality of devices is improved, and the yield of the devices is increased.