39results about How to "Efficiency variation" patented technology

Embodiments of the present invention help to accomplish accurate and reliable clearance control. In one embodiment of the present invention, a disk drive device adjusts the clearance between a head element portion and a disk with a heater on a slider. The clearance control according to the present embodiment incorporates the variation in heater power efficiency in the clearance variation depending on the radial position. The clearance variation in a unit of heater power varies depending on the radial position. Taking account of the variation in the heater power efficiency in the thermal fly-height control (TFC) depending on the radial position in addition to the clearance variation between the head element portion and the disk caused by variation in fly-height or attitude, accomplishes more accurate TFC.

A method and a device for exhaust gas recycling (EGR) in a combustion engine (1), wherein EGR gases are led into a section of the intake channel where a venturi (9) is arranged for modifying the flow of the intake air, and where a reduced pressure prevails because of modified flow, wherein at least a portion of the wall (10) of the venturi (9) is adjustable for varying the cross section of the venture and thereby for desired adjustment to prevailing operational conditions.

A computer-implemented method that simulates NPskew effects on a combination NFET (Negative Field Effect Transistor) / PFET (Positive Field Effect Transistor) semiconductor device using slew perturbations includes performing a timing test by a computing device, by: (1) evaluating perturb slews in Strong N / Weak P directions on the combination semiconductor device for a timing test result; (2) evaluation perturb slews in Weak N / Strong P directions on the combination semiconductor device for a timing test result; and (3) evaluating unperturbed slews in a balanced condition on the combination semiconductor device for a timing test result. After each test is performed, a determination is made as to which evaluation of the perturbed and unperturbed slews produces a most conservative timing test result for the combination semiconductor device. An NPskew effect adjusted timing test result is finally output based on determining the most conservative timing test result.

A screw for injection molding provides a coaxial piston that allows the effective cross-sectional area of the screw to be varied during the injection cycle permitting small shot metering with relatively large diameter injection molding screws. The screw is positioned within the injector barrel of a injection molding assembly and includes a number of threads disposed around its outer surface configured to advance molten plastic to the front of the barrel. The screw further includes a central bore having a piston slidably received within the central bore. The plastic shot to be forced out through the nozzle of the injection molding assembly is controlled by movement of the piston within the screw.

The present disclosure relates to methods and kits for DNA library construction, particularly for consistent and reproducible DNA sequencing.

A wear and / or friction reducing additive for a lubricating fluid in which the additive is a combination of a moderately hydrophilic single-phase compound and an anti-wear and / or anti-friction aqueous salt solution. The aqueous salt solution produces a coating on boundary layer surfaces. The lubricating fluid can be an emulsion-free hydrophobic oil, hydraulic fluid, antifreeze, or water. Preferably, the moderately hydrophilic single-phase compound is sulfonated castor oil and the aqueous salt solution additionally contains boric acid and zinc oxide. The emulsions produced by the aqueous salt solutions, the moderately hydrophilic single-phase compounds, or the combination thereof provide targeted boundary layer organizers that significantly enhance the anti-wear and / or anti-friction properties of the base lubricant by decreasing wear and / or friction of sliding and / or rolling surfaces at boundary layers.