33results about How to "Competitive advantage" patented technology

Methods and systems are described herein enabling a local public mobile network that is not configured to offer a certain type proprietary wireless e-mail and personal information service (such as a Blackberry service) to one of its subscribers that otherwise subscribes to such a proprietary service via non-local public network.

A method of forming a semiconductor device is disclosed. A gate structure is formed on a substrate. The gate structure includes a dummy gate and a spacer at a sidewall of the dummy gate. A dielectric layer is formed on the substrate outside of the gate structure. A metal hard mask layer is formed to cover tops of the dielectric layer and the spacer and to expose a surface of the gate structure. The dummy gate is removed to form a gate trench. A low-resistivity metal layer is formed on the metal hard mask layer filling in the gate trench. The low-resistivity metal layer outside of the gate trench is removed. The metal hard mask layer is removed.

Methods of forming a semiconductor trench and forming dual trenches and a structure for isolating devices are provided. The structure for isolating devices is disposed in a substrate having a periphery area and an array area. The structure for isolating devices includes a first isolation structure and a second isolation structure. The first isolation structure has a profile with at least three steps and is disposed in the substrate in the periphery area. The second isolation structure has a profile with at least two steps and is disposed in the substrate in the array area.

Provided is a FinFET including a substrate, at least one fin and at least one gate. A portion of the at least one fin is embedded in the substrate. The at least one fin includes, from bottom to top, a seed layer, a stress relaxation layer and a channel layer. The at least one gate is across the at least one fin. A method of forming a FinFET is further provided.

The present invention features a multi-step organic lawn care program that comprises four or more specified treatments that are applied at specific times throughout the year. Each step serves specific functions that assist in the maintenance and improvement of turf. Each treatment is intended to be applied at a prescribed time to ensure maximum benefits to the turf. The treatments are preferably applied in a liquid format are generally effective at detoxifying a surface that has been treated with chemical fertilizers. The treatments may be applied in conjunction with other products.

A method of forming a semiconductor structure is provided. A substrate having a cell area and a periphery area is provided. A stacked structure including a gate oxide layer, a floating gate and a first spacer is formed on the substrate in the cell area and a resistor is formed on the substrate in the periphery area. At least two doped regions are formed in the substrate beside the stacked structure. A dielectric material layer and a conductive material layer are sequentially formed on the substrate. A patterned photoresist layer is formed on the substrate to cover the stacked structure and a portion of the resistor. The dielectric material layer and the conductive material layer not covered by the patterned photoresist layer are removed, so as to form an inter-gate dielectric layer and a control gate on the stacked structure, and simultaneously form a salicide block layer on the resistor.

A hand trowel having a flat blade, a handle, an angled stem, and a bucket hook which has a length dimension of approximately one-and-one-half inches and extends beyond the attachment point of one end of the stem to the blade. Thus, the trowel can be stored in a substantially vertical, secure and fixed position on the lip of a bucket, preventing the handle from coming into contact with the contents of the bucket, or the contents being inadvertently spilled onto the work area. It also has a larger blade than is typically used for semi-fluid masonry products, to carry more product at a time to the working area, as well as act as a counterweight for the handle to keep the tool from falling out of bucket when it is moved. Thus, the present invention allows the operator to work more efficiently, and maintain a cleaner, less cluttered working area.

A method of fabricating a semiconductor device structure is provided. The method includes the following step. A gate dielectric layer is formed on a substrate. A gate electrode is on the gate dielectric layer. The gate dielectric layer exposed by the gate electrode is treated. A first etching process is performed to remove at least a portion of the gate dielectric layer exposed by the gate electrode. A spacer is formed on the sidewall of the gate electrode. A second etching process is performed to form recesses in the substrate beside the gate electrode. Besides, during the first etching process and the second etching process, an etching rate of the treated gate dielectric layer is greater than an etching rate of the untreated gate dielectric layer.

In one aspect, a system and a method for graphical interconnection of hardware signals of a device, especially of a controller device are provided. The object of the invention is to design the graphical interconnection in a simple manner so that a user can perform this function intuitively and without knowledge of the address convention used in the engineering system. This object is achieved by the inventive system and by the inventive method by the hardware signals being interconnected graphically with program elements of a programming environment using drag & drop. A clean copy of the Abstract that incorporates the above amendments is provided herewith on a separate page.

A method of forming a power MOSFET is described. An epitaxial layer of first conductivity type is formed on a substrate of first conductivity type. A body layer of second conductivity type is formed in the epitaxial layer. A plurality of mask patterns are formed on the substrate. A plurality of trenches are formed in the body layer and the epitaxial layer between the mask patterns. An oxide layer is formed on surfaces of the trenches. A conductive layer is formed in the trenches. A trimming process is performed to the mask patterns to reduce the line width of each mask pattern. Two source regions of first conductivity type are formed in the body layer beside each trench by using the trimmed mask patterns as a mask. A plurality of dielectric patterns are formed on the conductive layer and between the trimmed mask patterns. The trimmed mask patterns are removed.

The present invention discloses a preparation method of a polycarboxylate superplasticizer with carbon dioxide, comprising the following steps: (1) preparing a polycarboxylate superplasticizer prepolymer: performing an oxidation-reduction radical polymerization of an unsaturated macromonomer, an unsaturated phenol derivative, a reducing agent, an initiator and a chain transfer agent with different proportions under a nitrogen atmosphere to obtain a novel polycarboxylate superplasticizer prepolymer with different molecular weight; adjusting the pH by adding an alkali; (2) preparing a polycarboxylate superplasticizer: performing a Koble-Schmitt reaction between the polycarboxylate superplasticizer prepolymer and a carbon dioxide for a certain time to obtain the polycarboxylate superplasticizer. The polycarboxylate superplasticizer prepared by the method of the present invention retains the advantages of the existing water-reducing admixture of the polyether monomer compounds, and the production process is simple, safe, controllable, less side effect and has a better cost effective and competitive advantage.

A system and method for communicating an offer to apply for a credit instrument is provided. A processing allows for processing credit history data. A calculating step allows for calculating a first plurality of interest rates based on the credit history data. A determining step allows for determining a second plurality of interest rates based on the first plurality of interest rates, wherein the second plurality of interest rates corresponds to a plurality of credit risk scores. Finally, a communicating step allows for communicating the offer to apply for a credit instrument in an initial communication with an offeree, the offer disclosing the second plurality of interest rates. An apparatus that calculates the interest rates used in the offer is also provided.

Disclosed are a method of manufacturing an aluminum-based clad heat sink, and an aluminum-based clad heat sink manufactured by the method. The method includes ball-milling (i) aluminum or aluminum alloy powder and (ii) carbon nanotubes (CNT) to prepare a composite powder, preparing a multi-layered billet using the composite billet, and directly extruding the multi-layered billet using an extrusion die to produce a heat sink. The method has an advantage of producing a light high-strength high-conductivity aluminum-based clad heat sink having an competitive advantage in terms of price by using direct extrusion that is suitable for mass production due to its simplicity in process procedure and equipment required.