40results about How to "Closer in characteristic" patented technology

An inter-vertebral disc prosthesis intended for percutaneous deployment comprises an expandable annular enclosure and an expandable nuclear enclosure. The expandable annular enclosure incorporates a reinforcing annular band along its periphery and is filled with in-situ curable rubber. The expandable nuclear enclosure is filled with a gas. The nuclear prosthesis further incorporates a novel, integrally molded sealing valve assembly and is stretchable and collapsible into a minimal profile for ease of insertion into a specially designed delivery cannula, and is inflation-assisted expandable into an inter-vertebral disc in which complete percutaneous nuclectomy has been performed.

In order to analyze an information signal, a significant short-time spectrum is extracted from the information signal, the means for extracting being configured to extract such short-time spectra which come closer to a specific characteristic than other short-time spectra of the information signal. The short-time spectra extracted are then decomposed into component signals using ICA analysis, a component signal spectrum representing a profile spectrum of a tone source which generates a tone corresponding to the characteristic sought for. From a sequence of short-time spectra of the information signal and from the profile spectra determined, an amplitude envelope is eventually calculated for each profile spectrum, the amplitude envelope indicating how a profile spectrum of a tone source all in all changes over time. The profile spectra and all the amplitude envelopes associated therewith provide a description of the information signal which may be evaluated further, for example for transcription purposes in the case of a music signal.

A dome sheet, a key pad and a method of manufacturing a dome sheet are disclosed. The key pad comprises a dome sheet with a top sheet, a bottom sheet and a dome. The dome sheet forms a switch arrangement when mounted to a contact layer.

A display circuit of a display is provided to improve image quality of the display. The display circuit comprises a plurality of sections, a plurality of image input lines and a plurality of dummy extended data input lines. Each section comprises a plurality of data input lines for receiving data signals from the image input lines. A dummy extended data input line is formed by extending the data input line, expect for the longest data input line, so that the length of the dummy extended data input line is equal or smaller than that of the longest data input line. Thus, every image input lines will have the same or similar overlap capacities.

The present invention relates to the treatment of wounds. More particularly, it relates to compounds according to Formula (1) for use in methods of promoting wound healing, to formulations which incorporate these compounds and to a method of treating wounds using such compounds and formulations: wherein R₁ and R₂ may be the same or different and are selected from the group consisting of hydrogen (H) and a physiologically hydrolysable chemical group consisting of alkyl, alkyl carbonyl, alkenylcarbonyl arylcarbonyl, heteroarylcarbonyl, alkoxycarbonyl, aryloxycarbonyl, heteroaryloxycarbonyl, alkylether, alkenylether, arylether, and heteroarylether groups wherein the alkyl group or moiety consists of unsubstituted or substituted, straight-chain or branched-chain and cyclic alkyl groups having 2-22 carbon atoms, wherein the alkenyl moiety consists of unsubstituted and substituted, straight-chain or branched-chain and cyclic alkenyl groups having 2-22 carbon atoms, wherein the aryl moiety consists of unsubstituted and substituted phenyl, and phenalkyl groups wherein the alkyl moiety contains 1-3 carbon atoms and the phenyl moiety is unsubstituted or substituted, and the heteroaryl moiety is an aromatic 5- or 6-membered heterocyclic ring containing one or two heteroatoms selected from the group consisting of nitrogen, oxygen, and sulphur.

Conventionally, VF and IR characteristics of a Schottky barrier diode are in a tradeoff relation and there is a problem in that an increase in a leak current is unavoidable in order to realize a reduction in VF. To solve the problem, p type semiconductor regions of a pillar shape reaching an n+ type semiconductor substrate are provided in an n− type semiconductor layer. When a reverse voltage is applied, a depletion layer expanding in a substrate horizontal direction from the p type semiconductor regions fills the n− type semiconductor layer. Thus, it is possible to prevent the leak current generated on a Schottky junction interface from leaking to a cathode side. Since an impurity concentration of the n− type semiconductor layer can be increased to a degree at which the depletion layer expanding from the p type semiconductor regions adjacent to each other can be pinched off, it is possible to realize a reduction in VF and it is possible to secure a predetermined breakdown voltage if only the depletion layer is pinched off.

The invention provides an electrolaryngeal speech reconstruction method and a system thereof. Firstly, model parameters are extracted from the collected speech as a parameter library, then facial images of a speaker are acquired and then transmitted to an image analyzing and processing module to obtain the voice onset and offset times and the vowel classes, then a waveform of a voice source is synthesized by a voice source synthesis module, finally, the waveform of the above voice source is output by an electrolarynx vibration output module, wherein the voice source synthesis module firstly sets the model parameters of a glottal voice source so as to synthesize the waveform of the glottal voice source, and then a waveguide model is used to simulate sound transmission in a vocal tract and select shape parameters of the vocal tract according to the vowel classes.

A method is provided to provide surface-emitting type semiconductor lasers and methods for manufacturing the same, which can readily control transverse modes of laser light. A surface-emitting type semiconductor laser pertains to a surface-emitting type semiconductor laser having a vertical resonator above a substrate. The vertical resonator includes a first mirror, an active layer and a second mirror disposed in this order from the substrate, and is equipped with an optical path adjusting layer having a concave curved surface over the second mirror.