43results about How to "Change direction of transmission" patented technology

The invention relates to a cage roller. The cage roller comprises a plurality of roller bodies, a threaded pipe and two circular discs; the multiple roller bodies are parallel to the threaded pipe and surround the threaded pipe, and the two ends of each roller body are connected with the two circular discs; and the threaded pipe can move in the spaces formed by the multiple roller bodies and the two circular discs, and threads are arranged on the surfaces of the spaces. The cage roller can clear crystals on the surface of aluminum foil in time, the production technology of etched foil is ensured to be stably conducted, the quality of the etched foil is improved, the structure is simple, and the practicability is high.

The invention discloses an integrated imaging 3D liquid crystal display and an optical device used therefor. The integrated imaging 3D liquid crystal display comprises: a lens array, a display panel, and a dimming panel interposed between the lens array and the display panel , wherein the dimming panel includes a plurality of dimming units corresponding to different lenses or combinations of the lens array, the dimming unit has no displacement relative to the lens array and the display panel during operation, and includes electrodes and dimming The optical material, the electrode is applied with voltage, so that when the light adjusting material transmits the light from the display panel to the lens array, it changes the transmission direction of the light. The viewing angle of the integrated imaging 3D liquid crystal display can be increased.

A GaN-based LED having a nanometer structure inserted layer comprises a substrate and a nanometer structured template, wherein the nanometer structured template is epitaxially grown on the substrate and the surface thereof is of a concave-convex shape. The LED further comprises an inserted layer which is epitaxially grown on the nanometer structured template, an N-type ohmic contact layer which is epitaxially grown on the inserted layer and one side on which is provided with a table-board, an active layer which is epitaxially grown on the other side of the table-board of the N-type ohmic contact layer, a P-type layer is epitaxially grown on the active layer, a transparent electrode layer which is made on the P-type layer, a P bonding electrode which is photo-etched on the P-type and an N ohmic contact electrode 22 which is made on the table-board of the N-type ohmic contact layer.

The invention discloses a nitride light emitting diode (LED) structure, which comprises a substrate, a low-temperature nucleation layer and an undoped nitride layer, wherein the low-temperature nucleation layer and the undoped nitride layer grow on the substrate; a three-dimensional growth layer grows on the low-temperature nucleation layer; an AlxIn(1-x)N material layer is arranged between the three-dimensional growth layer and the undoped nitride layer and provided with a rough surface; the refractive index of the AlxIn(1-x)N material layer is different from that of the undoped nitride layer; and the x is more than 0 and less than 1. The invention also provides a preparation method of the nitride LED structure. The nitride LED structure provided by the invention changes the transmissiondirection of light rays due to a scattering effect, expands the critical angle of emergent light, and improves the light extraction efficiency and the external quantum efficiency. The preparation method provided by the invention can be compatible with the ordinary LED epitaxial growth process and is completed in a reaction chamber at one time, and extra machining or processing technologies are not needed.