GaN-based LED having nanometer structure inserted layer

Abstract

A GaN-based LED having a nanometer structure inserted layer comprises a substrate and a nanometer structured template, wherein the nanometer structured template is epitaxially grown on the substrate and the surface thereof is of a concave-convex shape. The LED further comprises an inserted layer which is epitaxially grown on the nanometer structured template, an N-type ohmic contact layer which is epitaxially grown on the inserted layer and one side on which is provided with a table-board, an active layer which is epitaxially grown on the other side of the table-board of the N-type ohmic contact layer, a P-type layer is epitaxially grown on the active layer, a transparent electrode layer which is made on the P-type layer, a P bonding electrode which is photo-etched on the P-type and an N ohmic contact electrode 22 which is made on the table-board of the N-type ohmic contact layer.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, in particular to a GaN-based LED with a nanostructure insertion layer. Background technique [0002] As a new generation of lighting sources, GaN-based LEDs have the advantages of energy saving and environmental protection, and can be widely used in various indications, displays, decorations, backlights, general lighting and urban night scenes. However, due to the large difference in refractive index between the GaN material and the epoxy resin used for packaging, the epoxy resin and air, the internal total reflection critical angle is very small (only 23.6°). Because of total reflection, a large amount of light cannot exit from the interface, and because the upper and lower interfaces are parallel, the light that cannot exit for the first time will propagate repeatedly in the dielectric material until all the light energy is dissipated into heat energy. This is not conducive to the utilizat...

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Problems solved by technology

However, these methods are relatively complicated to operate, which brings more or less problems to the subsequent growth and process manufacturing. For example, surface roughening may cause damage to the P-type, making subsequent ohmic contacts difficult to make. The reduction in area also creates thermal effects, etc.

These have hindered the further application of the device to a certain extent

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