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Nitride light emitting diode (LED) structure and preparation method thereof

A technology of LED structure and nitride, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of high production cost, achieve the effect of solving the problem of high production cost, improving light extraction efficiency and external quantum effect, and expanding the critical angle

Inactive Publication Date: 2013-04-10
ENRAYTEK OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to provide a nitride LED structure and its preparation method to solve the problem of high production cost caused by the photolithography process used to form a rough surface on the substrate

Method used

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  • Nitride light emitting diode (LED) structure and preparation method thereof
  • Nitride light emitting diode (LED) structure and preparation method thereof
  • Nitride light emitting diode (LED) structure and preparation method thereof

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preparation example Construction

[0037] figure 2 A flow chart of the steps of the method for fabricating a nitride LED provided by the embodiment of the present invention. refer to figure 2 , the preparation method of the nitride LED structure comprises the following steps:

[0038] S21, providing a substrate;

[0039] S22, forming a low-temperature nucleation layer, a three-dimensional growth layer, and Al on the substrate in sequence x In 1-x N material layer, non-doped nitride layer; wherein, the Al x In 1-x The N material layer has a rough surface, the Al x In 1-x The refractive index of the N material layer is different from the refractive index of the non-doped nitride layer.

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Abstract

The invention discloses a nitride light emitting diode (LED) structure, which comprises a substrate, a low-temperature nucleation layer and an undoped nitride layer, wherein the low-temperature nucleation layer and the undoped nitride layer grow on the substrate; a three-dimensional growth layer grows on the low-temperature nucleation layer; an AlxIn(1-x)N material layer is arranged between the three-dimensional growth layer and the undoped nitride layer and provided with a rough surface; the refractive index of the AlxIn(1-x)N material layer is different from that of the undoped nitride layer; and the x is more than 0 and less than 1. The invention also provides a preparation method of the nitride LED structure. The nitride LED structure provided by the invention changes the transmissiondirection of light rays due to a scattering effect, expands the critical angle of emergent light, and improves the light extraction efficiency and the external quantum efficiency. The preparation method provided by the invention can be compatible with the ordinary LED epitaxial growth process and is completed in a reaction chamber at one time, and extra machining or processing technologies are not needed.

Description

technical field [0001] The invention relates to the technical field of LED preparation, in particular to a nitride LED structure and a preparation method thereof. Background technique [0002] A light-emitting diode (LED, Light Emitting Diode) is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting material and can directly convert electricity into light. When a forward voltage is applied to both ends of the semiconductor PN junction, the minority carriers and majority carriers injected into the PN junction recombine, releasing excess energy and causing photon emission, which directly emits colors of red, orange, yellow, Green, cyan, blue, and violet light. [0003] With the development of nitride-based high-brightness LED applications, a new generation of green and environment-friendly solid-state lighting sources - nitride LEDs has become the focus of attention. Group III nitride semiconductor materials mainly comp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/20H01L33/32H01L33/00
Inventor 于洪波肖德元程蒙召张汝京
Owner ENRAYTEK OPTOELECTRONICS
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