139results about How to "Avoid insulation breakdown" patented technology

The electrostatic chuck includes: a conductive base formed of metal or both metal and ceramics, serving as a chucking electrode; and an insulating film formed on one principal plane of the conductive base, the top face of the insulating film serving as a placing surface for placing a wafer; wherein the insulating film is formed of a uniform amorphous ceramics of an oxide and has a thickness in a range of 10 to 100 μm, thereby preventing cracking and insulation breakdown in the insulating film and improving characteristics of releasing the wafer.

An electrostatic chuck apparatus including:an electrostatic chuck section having one main surface that is a mounting surface on which a plate specimen is mounted, and being equipped with an electrostatic adsorbing internal electrode; and a temperature adjusting base section that adjusts the electrostatic chuck section to a desired temperature, wherein a heating member is bonded to a main surface of the electrostatic chuck section, which is opposite to the mounting surface, via an adhesive material, the whole or a part of the main surface of the temperature adjusting base section, which is on the side of the electrostatic chuck section, is covered with a sheet or film of insulating material, and the electrostatic chuck section bonded with the heating member and the temperature adjusting base section covered with the insulating material are bonded and integrated via an insulating organic adhesive layer formed by curing a liquid adhesive.

An electric precipitator prevents dielectric breakdown by ensuring the dielectric distance among a plurality of electrodes. The electric precipitator includes a charging section for charging dust particles in air, and a collecting section for collecting the dust particles charged by the charging section. The collecting section includes a high voltage electrode having a conductive layer coated with a dielectric layer, and a low voltage electrode having at least one protrusion that maintains a gap between the high voltage electrode and the low voltage electrode. The conductive layer includes at least one cutting part formed in an area corresponding to the protrusion.

An electrostatic motor has a disc-shaped stator and a disc-shaped rotor are opposed to each other in a vacuum container. In the stator, first electrodes and second electrodes, which are attached to electrode supports, and which are electrically insulated from each other by an insulator, are arranged alternately in the circumferential direction. In the rotor, first electrodes and second electrodes, which are attached to electrode supports, and which are electrically insulated from each other by an insulator, are arranged alternately in the circumferential direction. The first electrodes and the second electrodes on the side of the stator are arranged at a spacing of two or more rows at a predetermined distance from the center of a rotating shaft. The first electrodes and the second electrodes on the side of the rotor are arranged at a predetermined distance from the center of the rotating shaft and at an intermediate position between the rows of the first electrodes and the second electrodes on the side of the stator. As a result, the electrostatic motor can establish a high electric field in the vacuum so that it can rotationally drive with a sufficient driving force.

A semiconductor device according to an embodiment of the present invention includes: a semiconductor layer 2 of a wide band gap semiconductor arranged on a principal surface of a substrate 1; a trench 5 arranged in the semiconductor layer and including a bottom surface, a plurality of main side surfaces, and a plurality of corner side surfaces each connecting together two adjacent main side surfaces; a gate insulating film 6 arranged on the bottom surface, the main side surfaces and the corner side surfaces of the trench 5; and a gate electrode 8 arranged in the trench, wherein the semiconductor layer includes a drift region 2d of a first conductivity type, and a body region 3 of a second conductivity type arranged on the drift region; the trench runs through the body region 3 and has the bottom surface inside the drift region; the corner side surfaces of the trench do not have a depressed portion; the gate insulating film 6 is thicker on the corner side surfaces of the trench than on the main side surfaces of the trench; and a portion of the gate insulating film 6 that is located on the corner side surfaces is a first insulating layer 6b, and a portion of the gate insulating film 6 that is located on the main side surfaces is a second insulating layer 6a.

A silicon carbide semiconductor device includes a semiconductor substrate containing silicon carbide, a semiconductor layer formed over the semiconductor substrate, and a plurality of well regions formed on a front surface side of a cell forming area set to the semiconductor layer. The device further includes source layers formed on the front surface side lying within the well regions, an outer peripheral insulating film thick in thickness, which is formed over the semiconductor layer in an outer peripheral area surrounding the cell forming area, a gate oxide film formed over the front surface of the semiconductor layer in the cell forming area, and a gate electrode layer formed so as to extend from above the gate oxide film to above the outer peripheral insulating film.

A piezoelectric element has a piezoelectric body, two electrodes sandwiching the piezoelectric body, a protective layer covering the piezoelectric body and the two electrodes, and an antistatic layer formed on and / or in the protective layer.

A piezoelectric element has a piezoelectric body, two electrodes sandwiching the piezoelectric body, a protective layer covering the piezoelectric body and the two electrodes, and an antistatic layer formed on and / or in the protective layer.

Between a source electrode (25) of a main device (24) and a current sensing electrode (22) of a current detection device (21), a resistor for detecting current is connected. Dielectric withstand voltage of gate insulator (36) is larger than a product of the resistor and maximal current flowing through the current detection device (21) with reverse bias. A diffusion length of a p-body region (32) of the main device (24) is shorter than that of a p-body (31) of the current detection device (21). A curvature radius at an end portion of the p-body region (32) of the main device (24) is smaller than that of the p-body (31) of the current detection device (21). As a result, at the inverse bias, electric field at the end portion of the p-body region (32) of the main device (24) becomes stronger than that of the p-body region (31) of the current detection device (21). Consequently, avalanche breakdown tends to occur earlier in the main device 24 than the current detection device (21).

Between a source electrode (25) of a main device (24) and a current sensing electrode (22) of a current detection device (21), a resistor for detecting current is connected. Dielectric withstand voltage of gate insulator (36) is larger than a product of the resistor and maximal current flowing through the current detection device (21) with reverse bias. A diffusion length of a p-body region (32) of the main device (24) is shorter than that of a p-body (31) of the current detection device (21). A curvature radius at an end portion of the p-body region (32) of the main device (24) is smaller than that of the p-body (31) of the current detection device (21). As a result, at the inverse bias, electric field at the end portion of the p-body region (32) of the main device (24) becomes stronger than that of the p-body region (31) of the current detection device (21). Consequently, avalanche breakdown tends to occur earlier in the main device 24 than the current detection device (21).