41 results about "Threshold shift" patented technology

A system and method for driving an AMOLED display is provided. The AMOLED display includes a plurality of pixel circuits. A voltage-programming scheme, a current-programming scheme or a combination thereof is applied to drive the display. Threshold shift information, and / or voltage necessary to obtain hybrid driving circuit may be acquired. A data sampling may be implemented to acquire a current / voltage relationship. A feedback operation may be implemented to correct the brightness of the pixel.

The invention discloses a shift register unit, a register, an organic light emitting display panel and a driving method. The shift register unit comprises a node potentiometric controller and an output unit; the node potentiometric controller comprises a first output end and a second output end; the output unit is used for outputting a first level signal or a second level signal on the basis of a first control signal output from the first output end and a second control signal output from the second output end. By the arrangement, nodes in the shift register unit are stable and controllable in electric potential, and the problem that the nodes are unstable in level jumping of the control signals in the shift register unit resulting in output logic confusion of the shift register unit can be solved; in addition, the shift register unit has robustness performance on threshold shift of transistors, normal work can still be performed within certain threshold shift range when threshold shift exists in the transistors, and complexity in technology of the shift register unit is lowered.

The present invention provides a novel method in altering the sequence of multi-level-cell programming in a multi-bit-cell of a nitride trapping memory cell that reduces or eliminates voltage threshold shifts between program steps while avoiding the suppression in the duration of a read window caused by a complementary bit disturbance. In a first embodiment, the present invention programs the multi-level cell in a multi-bit-cell having four bits in the following order: programming a third program level (level3), programming a first program level (level1) and a second program level (level2) to level 1, and programming the second program level from the first program level. In a second embodiment, the present invention programs the multi-level cell in the multi-bit-cell having four bits in the following order: programming a third program level (level3), programming a second program level (level2), and programming a first program level (level1).

The present invention provides a novel method in altering the sequence of multi-level-cell programming in a multi-bit-cell of a nitride trapping memory cell that reduces or eliminates voltage threshold shifts between program steps while avoiding the suppression in the duration of a read window caused by a complementary bit disturbance. In a first embodiment, the present invention programs the multi-level cell in a multi-bit-cell having four bits in the following order: programming a third program level (level3), programming a first program level (level1) and a second program level (level2) to level 1, and programming the second program level from the first program level. In a second embodiment, the present invention programs the multi-level cell in the multi-bit-cell having four bits in the following order: programming a third program level (level3), programming a second program level (level2), and programming a first program level (level 1).

A method of controlling an automatic transmission includes determining whether a coast-down control condition is met, and performing coast-down control if the condition is met. The coast-down control includes selectively downshifting, such that engine speed is maintained above a fuel-cut threshold speed. The coast-down control condition may include a throttle opening being below a threshold opening, a shift-speed being higher than or equal to a threshold shift-speed, and a road slope being smaller than a predetermined slope. The method may also include determining whether a deceleration lock-up control condition is met, and performing deceleration lock-up control, including engaging a lock-up clutch, if the condition is met. The deceleration lock-up control condition may include a throttle opening being below a threshold opening, a shift-speed being below a threshold shift-speed, a brake not being operated, and a difference between an engine speed and a turbine speed being smaller than a reference value.

A power switching circuit designed for operating in a radiation environment using non-radiation hardened components is provided. The power switching circuit provides a high-voltage rated, non-radiation hardened N-channel FET (N-FET) controlled by a relatively small, low-voltage, non-radiation hardened P-channel FET (P-FET), while both devices are operating in a radiation environment. The P-FET device is drive by a sufficiently high drive voltage in order to overcome gate threshold shifts resulting from accumulated radiation damage.

Based on the results of detection of characteristics of drive transistors and organic EL elements, a control circuit finds magnitudes of threshold shifts of the drive transistors and the organic EL elements. A power supply voltage control unit sets a value of a low-level power supply voltage to a value lower, by a voltage value corresponding to an average value of the magnitudes of the threshold shifts for all pixels, than a value at an initial point in time. Furthermore, the power supply voltage control unit adjusts a value of a high-level power supply voltage, depending on magnitudes of mobilities obtained by detection of characteristics of the drive transistors.

Oxygen scavenging material embedded in an isolation structure provides improved protection of high dielectric constant (Hi-K) materials from oxygen contamination while avoiding alteration of work function and switching threshold shift in transistors including such Hi-K materials.

To provide a semiconductor memory device including an oxide semiconductor that can deal with instability of a threshold characteristic, in which writing is possible by a simple method. The semiconductor memory device functions by utilizing a characteristic that a threshold shifts when a thin film transistor including an oxide semiconductor is irradiated with ultraviolet light. Readout can be performed by setting a readout voltage between the threshold before the ultraviolet light irradiation and the threshold after irradiation. The threshold characteristic of an initial characteristic can be controlled by providing a back gate or by using two thin film transistors.

The invention relates to an image binarization method, a device and a video analysis system. The method comprises steps: binarization processing is carried out on a to-be-processed area or an image, and a binarization processing threshold is acquired; a neural network is adopted for training pixels whose pixel values are not within a threshold shift range in the to-be-processed area or the image, and binarization is carried out on a training result, wherein the lower limit of the threshold shift range is the threshold minus a predetermined shift value, and the upper limit of the threshold shift range is the threshold plus the predetermined shift value. According to the image binarization method of the invention, basic binarization processing is firstly carried out, neural network algorithm is adopted for training pixels whose pixel values are obviously higher than or lower than the threshold used for basic binarization processing (the pixel values are not within the threshold shift range), self-learning features of the neural network are used, and binarization of the image is more intelligent.

A gas detection system is provided for identifying a gas. The gas detection system includes a sensing module with a hollow chamber enclosed by a chamber housing. Additionally, the sensing module includes an optical sensing fiber positioned within the hollow chamber. The optical sensing fiber includes a gas sensor including a fiber Bragg grating positioned at a grating location along the optical sensing fiber, and a sensing layer affixed to an exterior surface of the optical sensing fiber at the grating location. After the gas is directed into the hollow chamber, the sensing layer and the gas exchange heat energy, based in part on a heat transfer coefficient of the gas. The exchange of the heat energy induces a shift in a Bragg resonant wavelength of the fiber Bragg grating which exceeds a threshold shift required for detection, where the shift is used to identify the gas.

The invention provides an application of sodium butyrate for preventing noise-induced hearing loss, and belongs to the technical field of biological medicine. According to the application of sodium butyrate for preventing noise-induced hearing loss, in the noise-induced hearing loss experiment of mice models, sodium butyrate can reduce the auditory brainstem response threshold shift after noise exposure, increase the survival rate of cochlear hair cells after noise exposure, has excellent noise-induced hearing loss preventing effect on noises at multiple frequencies, especially has excellent preventative effect on noise-induced hearing loss, explosive hearing loss and other diseases, can be used for preparing drugs and / or healthcare products for preventing noise-induced hearing loss, has good research and application prospects, and can fill in the gap of drugs for preventing noise-induced hearing loss at present.

The invention provides a pixel circuit, an array substrate and a display device. The pixel circuit comprises a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a driving transistor, a first capacitor and a second capacitor. By means of cooperation of the transistors and the capacitors, drive current which is generated by the driving transistor and used for driving a light emitting element to emit light is unrelated to intrinsic threshold voltage of the driving transistor, threshold shift caused by techniques is compensated, the problem of nonuniformity in light emission of the display device is solved, and uniformity in light emission of the display device is improved; in addition, the threshold voltage of the driving transistor is compensated by means of source following, and accordingly hysteresis is avoided.

Disclosed is a pharmaceutical composition for preventing or treating hearing loss, comprising Cuscuta japonica Choisy extract, or the extract of Rehmannia glutinosa Libschitz var. purpurea MAKINO and Cuscuta japonica Choisy. In addition, the present invention provides a food composition for preventing or ameliorating hearing loss, comprising Cuscuta japonica Choisy extract, or the extract of Rehmannia glutinosa Libschitz var. purpurea MAKINO and Cuscuta japonica Choisy. The composition inhibits hearing loss, in particular, acoustic trauma, temporary or permanent hearing loss by effectively inhibiting the threshold shift induced by noise and the likes, and thusit is effective in preventing or treating hearing loss. In addition, it can be administered orally, thereby drug compliance of patients can be enhanced.

The invention discloses a pixel circuit of an organic light emitting display, comprising a first power line, a second power line, a data line, a reference voltage, an organic light emitting diode, a storage capacitor and eight transistors T1-T8, wherein the data line is connected with a source electrode of the T1; a drain electrode of the T1 is connected with a drain electrode of the T2 and a source electrode of the T3; a source electrode of the T2 and a source electrode of the T7 are connected with the first power line; a drain electrode of the T3 is connected with a drain electrode of the T4 and a source electrode of the T5; a drain electrode of the T5 is connected with an anode electrode of the organic light emitting diode; a grid electrode of the T3 and a drain electrode of the T6 are connected with a first end of the storage capacitor; a drain electrode of the T7 and a drain electrode of the T8 are connected with a second end of the storage capacitor; a source electrode of the T8 is connected with the reference voltage; a source electrode of the T6 is connected with the second power line; a grid electrode of the T6 is connected with a first scanning control line; grid electrodes of the T2, the T5 and the T7 are connected with a control line; and grid electrodes of the T1, the T4 and the T8 are connected with a second scanning control line. The pixel circuit disclosed by the invention has the advantages that threshold shift of the driving transistors and the voltage fall of the power lines can be compensated, so that the brightness of the display is more uniform.