The invention discloses a method for directly extracting small-
signal model parameters of an III-V family
MOSFET, and belongs to the technical field of micro-
electronics integrated circuits. The method includes the steps of conducting de-embedding through a bonding pad and a
metal interconnection line, determining, by means of the
transistor direct-current transfer characteristic and a cold state S parameter, a bias condition suitable for extracting a
transistor parasitic
resistor, then, removing the influences of a channel
resistor under the bias condition, conducting
linear fitting to extract the parameters of the parasitic
resistor, finally, conducting de-embedding on the parasitic resistor, and extracting intrinsic parameters through an
equivalent circuit of a small-
signal model of the III-V family
MOSFET and through
linear fitting. The process for directly extracting the small-
signal parameters completely conforms to the physical significance of a device, a necessary foundation for the application of the
integrated circuit technology is provided, and meanwhile the method has a very good
reference function for extraction of small-signal
model parameters of other types of devices which are made of novel materials and are of novel structures.