Parameter extraction method for InP HBT (indium phosphide heterojunction bipolar transistor) small-signal models

Abstract

The invention discloses a parameter extraction method for InP HBT small-signal models, which mainly solves the problems of the prior art, i.e. complex extraction process and inaccurate extraction results. The technical scheme of the invention is as follows: an open circuit soldering point structure and a short circuit soldering point structure are adopted to analyze an equivalent circuit to extract parasitic parameters; a collector open circuit state is adopted to analyze the equivalent circuit to extract external resistance parameters; a circuit network theory is utilized to analyze the scattering parameter S, impedance parameter Z and admittance parameter Y of the intrinsic part of an InP HBT device; and a layer-by-layer stripping method is adopted to determine a fixed expression for each intrinsic model parameter to extract intrinsic parameters. The parameter extraction method has the advantage of accurate, rapid and visual parameter extraction. A simulation result shows that a small-signal model result extracted by the method can perfectly fit the scattering parameter S of an actual device-testing result and can be used for directing circuit design and the determination of a large-signal model peripheral circuit.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices and relates to a parameter extraction method, in particular to a parameter extraction method of an InP HBT small-signal model, which can be used in the design of integrated circuits. Background technique [0002] InP HBT refers to indium phosphide heterojunction bipolar transistor. This device has the characteristics of good frequency characteristics and high breakdown voltage. In recent years, it has been in-depth research, and the device characteristics have been greatly improved. Due to the superior characteristics of InP HBT, it is widely used in high-speed digital circuits, microwave and millimeter wave circuits and digital-analog hybrid circuits. With the continuous development of InP HBT applications, it is of great significance to establish an accurate small-signal model and a fast and accurate parameter extraction method for the circuit design of InP HBT. At the same time...

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Problems solved by technology

The numerical optimization method can be realized with the help of computer-aided software. The model parameters are completely obtained through numerical analysis and optimization, but the amount of calculation is large, and the extraction results are significantly different from the experimental results; the direct extraction method is based on the determined model topology. Scattering parameter S, impedance parameter Z, and admittance parameter Y expressions, and on this basis, make different approximations and assumptions for related expressions, and extract model parameters based on experimental data, and the extracted parameters have concise and clear physical meanings , and has relatively good accuracy and wide-band applicability, but the process of deriving parameters by the traditional direct extraction method is relatively cumbersome, resulting in inaccurate and rapid extraction of InP HBT small-signal model parameters, which affects circuit design and large-signal model building

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