The invention provides a
nitride semiconductor microcavity
laser structure and a preparation method thereof. A microcavity
laser is prepared on the (0001)
nitrogen surface of a
nitride semiconductor,and p-type
ohmic contact on a (0001)
gallium surface adopts a whole surface contact manner, so that the series resistance of the microcavity
laser is greatly reduced; the heat of the microcavity laseris directly transferred into a
heat sink with
high heat conductivity, a microcavity laser is prepared on the (0001)
nitrogen surface, and the side wall of the microcavity laser is manufactured by using a wet
etching method, so that the stability of the microcavity laser can be greatly promoted, the
optical limiting layer of the microcavity laser is prepared by using AlInGaN, ITO, AZO, IGZO, porous GaN, Ag, Al, ZnO, MgO, Si, SiO2, SiNx, TiO2, ZrO2, AlN, Al2O3, Ta2O5, HfO2, HfSiO4 and AlOH materials, and high optical limitation is provided. The novel
nitride semiconductor microcavity laser structure provided by the invention has the advantages of low electric resistance, low
thermal resistance, easy implementation of electric injection, high stability, high reliability and the like, the performance of the nitride semiconductor microcavity laser can be greatly enhanced, and the service life of the nitride semiconductor microcavity laser is greatly prolonged.