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55results about How to "Resistant to breakage" patented technology

Compound bows

Improved compound bows which are smaller, more compact, lighter, and more easily handled and serviced than compound bows of conventional construction but are nevertheless capable of propelling an arrow at an equal or higher velocity and with comparable or greater accuracy than a conventional bow. The improved bows are quieter than those of conventional construction and less apt to snag on brush or other obstacles. They have a rigid riser with ends to which string cams are rotatably mounted and cam-associated power units mounted to and towards the ends of the riser. Each power unit has a component which is elastically deformed to store potential energy as the bow is drawn and a power cable connecting the power storing component to the associated string cam. A bow string extends between and is connected at its opposite ends to the string cams. As the bow is drawn, the string cams are rotated in counter directions, pulling on the power unit cables and thereby elastically deforming and storing potential energy in the power unit components. When the bow string is subsequently released, the elastically deformable power unit components restore to rest configurations, this converting the stored potential energy to arrow propelling kinetic energy. A timing cable arrangement insures that the cams are synchronized to rotate in unison, avoiding the unwanted nock travel that might otherwise occur; and the power units have an adjustment feature which allows the force required to fully draw the bow to be changed.
Owner:STEVENS SIMS INC

Fracturing fluid

There is described a fracturing fluid comprising a polar base, 0.1-5.0% of a mid-molecular weight polyacrylate, and an activator for ionizing the polyacrylate to a hydroscopic state.
Owner:CALFRAC WELL SERVICES

Silicon carbide semiconductor device and method for manufacturing the same

In a silicon carbide semiconductor device, a p-type SiC layer is disposed in a corner of a bottom of a trench. Thus, even if an electric field is applied between a drain and a gate when a MOSFET is turned off, a depletion layer in a pn junction between the p-type SiC layer and an n− type drift layer greatly extends toward the n− type drift layer, and a high voltage caused by an influence of a drain voltage hardly enters a gate insulating film. Hence, an electric field concentration within the gate insulating film can be reduced, and the gate insulating film can be restricted from being broken. In this case, although the p-type SiC layer may be in a floating state, the p-type SiC layer is formed in only the corner of the bottom of the trench. Thus, the deterioration of the switching characteristic is relatively low.
Owner:DENSO CORP +1

Wiring board and semiconductor device excellent in folding endurance

A wiring board with folding endurance includes an insulating film and a copper-containing wiring pattern on a surface of the insulating film, and includes an insulating resin coating layer formed on the wiring pattern such that terminals are exposed. The wiring board has any of the constitutions (A), (B), (C) and (D) below. (A) The wiring pattern includes copper particles having a mean crystal particle diameter in the range of from 0.65 to 0.85 μm as determined by EBSP; not more than 1% of the volume of the wiring pattern is accounted for by copper crystal particles having a particle diameter of less than 1.0 μm as determined by EBSP; and copper crystal particles that are [100] oriented in the longitudinal direction of a lead of the wiring pattern account for from 10 to 20% of the volume of the wiring pattern as determined by EBSP. (B) The insulating film is formed of a polyimide film having a tensile strength within the range of from 450 to 600 MPa and a Young's modulus within the range of from 8500 to 9500 MPa. (C) The insulating film is formed of a polyimide film having a thickness of from 10 to 30 μm. (D) The insulating resin coating layer has a thickness of from 50 to 150% relative to the thickness of the insulating film.
Owner:MITSUI MINING & SMELTING CO LTD

Valve freeze control apparatus and sensor element breakage control apparatus for internal combustion engine

A valve freeze control apparatus for an internal combustion engine includes a concentration sensor, a valve, a freeze control device, and a start determination unit. The concentration sensor is adapted to detect an alcohol concentration of fuel supplied to the internal combustion engine. The valve is provided in one of an intake passage and an exhaust passage of the internal combustion engine, wherein the valve controls flow of air that passes through the one of the intake and exhaust passages. The freeze control device is adapted to limit malfunction of the valve caused by freeze of water in exhaust gas, and the water has been attached to the valve. The start determination unit determines to start the freeze control device when the alcohol concentration detected by the concentration sensor is equal to or greater than a reference value.
Owner:DENSO CORP

Semiconductor package, method of production of same, printed circuit board, and electronic apparatus

A semiconductor package provided with a heat radiator achieving a further improvement of reliability by reducing an influence of thermal stress. For this purpose, the heat radiator is formed by a heat radiator comprised of a heat radiation plate plus a box shaped part and comprised so that the entire semiconductor chip is enclosed in this box shaped part together with a board via a metallic bonding material.
Owner:FUJITSU LTD
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