The invention relates to a method for growing large-size high-temperature
oxide crystals by using a top-seeded
temperature gradient method, which relates to a new process of
crystal growth and comprises the following steps of: combining a Kyropoulos method, a
Czochralski method (CZ), a heat exchange method (HEM), a
temperature gradient technique (TGT) and a Bridgman-Stockbarge method together, creating a special high temperature vacuum
crystal furnace with adjustable
temperature gradient and temperature field center, and producing the large-size high temperature
oxide crystals through charging, high vacuum pimping, material melting by temperature rise,
crystal seed washing, real-time temperature field adjustment, seeding by CZ, multiple reducing processes, a shouldering process by CZ, an isodiametric process by the Kyropoulos method, heat exchange by HEM combined with isodiametric growth by a TGT technology (a
diameter control technology is CZ weighting), ending and
crucible separation by CZ and annealing. The method is also suitable for a high vacuum environment and an
atmosphere protection environment. The method has the
advantage that the lowest
energy consumption and the lowest cost are utilized for producing multiple high-quality high-temperature
oxide crystal material products.