127results about How to "Longer held" patented technology

The invention describes a method of performing a gaze-based interaction between a user (1) and an interactive display system (2) comprising a three-dimensional display area (D) in which a number of physical objects (10, 11, 12, 13, 14, 15, 16) is arranged, and an observation means (3), which method comprises the steps of acquiring a gaze-related output (30) for the user (1) from the observation means (3), determining a momentary gaze category (G_o, G_dw, G_bo, G_nr) from a plurality of gaze categories (G_o, G_dw, _Gbo, G_nr) on the basis of the gaze-related output (30); and continuously generating display area feedback according to the momentary determined gaze category (G_o, G_dw, G_bo, G_nr). The invention further describes an interactive display system (2) comprising a three-dimensional display area (D) in which a number of physical objects (10, 11, 12, 13, 14, 15, 16) is arranged, an observation means (3) for acquiring a gaze-related output (30) for a user (1), a gaze category determination unit (22) for determining a momentary gaze category (G_o, G_dw, G_bo, G_nr) from a plurality of gaze categories (G_o, G_dw, _Gbo, G_nr) on the basis of the gaze-related output (30); and a feedback generation unit (25) for continuously generating display area feedback (29) according to the momentary determined gaze category (G_o, G_dw, G_bo, G_nr).

The degree of integration of a semiconductor device is enhanced and the storage capacity per unit area is increased. The semiconductor device includes a first transistor provided in a semiconductor substrate and a second transistor provided over the first transistor. In addition, an upper portion of a semiconductor layer of the second transistor is in contact with a wiring, and a lower portion thereof is in contact with a gate electrode of the first transistor. With such a structure, the wiring and the gate electrode of the first transistor can serve as a source electrode and a drain electrode of the second transistor, respectively. Accordingly, the area occupied by the semiconductor device can be reduced.

A semiconductor device is formed using a material which allows a sufficient reduction in off-state current of a transistor; for example, an oxide semiconductor material, which is a wide-gap semiconductor, is used. When a semiconductor material which allows a sufficient reduction in off-state current of a transistor is used, the semiconductor device can hold data for a ions time. Transistors each including an oxide semiconductor in memory cells of the semiconductor device are connected in series; thus, a source electrode of the transistor including an oxide semiconductor in the memory cell and a drain electrode of the transistor including an oxide semiconductor in the adjacent memory cell can be connected to each other. Therefore, the area occupied by the memory cells can be reduced.

A semiconductor device including a memory cell formed using a wide bandgap semiconductor, for example, an oxide semiconductor is provided. The semiconductor device includes a potential change circuit having a function of outputting a potential lower than a reference potential for reading data from the memory cell. With the use of the wide bandgap semiconductor, an off-state current of a transistor included in the memory cell can be sufficiently reduced, and the semiconductor device which can hold data for a long period can be provided.

It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limitation on the number of writings. A semiconductor device includes a second transistor and a capacitor provided over a first transistor. A source electrode of the second transistor which is in contact with a gate electrode of the first transistor is formed using a material having etching selectivity with respect to the gate electrode. By forming the source electrode of the second transistor using a material having etching selectivity with respect to the gate electrode of the first transistor, a margin in layout can be reduced, so that the degree of integration of the semiconductor device can be increased.

In a semiconductor device which conducts multilevel writing operation and a driving method thereof, a signal line for controlling on/off of a writing transistor for conducting a writing operation on a memory cell using a transistor including an oxide semiconductor layer is disposed along a bit line, and a multilevel writing operation is conducted with use of, also in a writing operation, a voltage which is applied to a capacitor at a reading operation. Because an oxide semiconductor material that is a wide gap semiconductor capable of sufficiently reducing off-state current of a transistor is used, data can be held for a long period.

A semiconductor device with a novel structure is provided in which stored data can be held even when power is not supplied and the number of writing is not limited. The semiconductor includes a second transistor and a capacitor over a first transistor. The capacitor includes a source or drain electrode and a gate insulating layer of the second transistor and a capacitor electrode over an insulating layer which covers the second transistor. The gate electrode of the second transistor and the capacitor electrode overlap at least partly with each other with the insulating layer interposed therebetween. By forming the gate electrode of the second transistor and the capacitor electrode using different layers, an integration degree of the semiconductor device can be improved.

A memory element having a novel structure and a signal processing circuit including the memory element are provided. A first circuit, including a first transistor and a second transistor, and a second circuit, including a third transistor and a fourth transistor, are included. A first signal potential and a second signal potential, each corresponding to an input signal, are respectively input to a gate of the second transistor via the first transistor in an on state and to a gate of the fourth transistor via the third transistor in an on state. After that, the first transistor and the third transistor are turned off. The input signal is read out using both the states of the second transistor and the fourth transistor. A transistor including an oxide semiconductor in which a channel is formed can be used for the first transistor and the third transistor.

Edible chews for pets have a low density (e.g. about 1.0 Kg/L or less) and a smooth exterior surface. One method by which the low density and the smooth exterior surface can be achieved uses a modified extrusion die to increase shear and restrict surface bubbles. Another method by which the low density and the smooth exterior surface can be achieved uses an extruder screw with a modified profile that holds a dough longer therein to create a whipping effect resulting in more bubble nucleation sites and hence a more uniform cellular matrix. The puffed (expanded) product was experimentally tested and provided better dental cleaning scores than a current unexpanded similarly formulated commercial dental product.

The present invention provides a memory circuit in which, while the power is not supplied, a data signal that has been held in a memory section corresponding to a volatile memory can be held in a capacitor in a memory section corresponding to a nonvolatile memory. In the nonvolatile memory section, a transistor whose channel is formed in an oxide semiconductor layer allows a signal to be held in the capacitor for a long period. Thus, the memory circuit can hold a logic state (data signal) even while the power supply is stopped. A potential applied to a gate of the transistor whose channel is formed in an oxide semiconductor layer is raised by a booster circuit provided between a wiring for carrying power supply potential and the gate of the transistor, allowing a data signal to be held even by one power supply potential without malfunction.