2178results about "Electric circuits" patented technology

An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second cathode configured to divert a portion of current from the wafer surface. The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

The invention features a flow-through capacitor system that achieves enhanced power efficiency by sequential control and actuation of at least two or more flow-through capacitor cells within the flow-through capacitor system. Alternatively or in addition, power efficiency is enhanced by integrating the purification stages of the system, for example, by placing more than one cell within a single cell casing. Preferably, integrated stage flow-through capacitors are controlled sequentially.

The present invention has for its object to provide a process for manufacturing multilayer printed circuit boards which is capable of simultaneous via hole filling and formation of conductor circuit and via holes of good crystallinity and uniform deposition can be constructed on a substrate and high-density wiring and highly reliable conductor connections can be realized without annealing. The present invention is related to a process for manufacturing multilayer printed circuit boards which comprises disposing an interlayer resin insulating layer on a substrate formed with a conductor circuit, creating openings for formation of via holes in said interlayer resin insulating layer, forming an electroless plated metal layer on said interlayer resin insulating layer, disposing a resist thereon, performing electroplating, stripping the resist off and etching the electroless plated metal layer to provide a conductor circuit and via holes, wherein the electroplating is performed intermittently using said electroless plated metal layer as cathode and a plating metal as anode at a constant voltage between said anode and said cathode.

A novel method and apparatus of wet processing workpieces, such as electroplating semiconductor wafers and the like, that incorporates reciprocating processing fluid agitation to control fluid flow at the workpiece, and where electric fields are involved as in such electroplating, controlling the electric field distribution.

In an electrochemical reactor used for electrochemical treatment of a substrate, for example, for electroplating or electropolishing the substrate, one or more of the surface area of a field-shaping shield, the shield's distance between the anode and cathode, and the shield's angular orientation is varied during electrochemical treatment to screen the applied field and to compensate for potential drop along the radius of a wafer. The shield establishes an inverse potential drop in the electrolytic fluid to overcome the resistance of a thin film of conductive metal on the wafer.

An apparatus for producing electrolyzed water includes an electrochemical cell and a solution reservoir containing a solution and having an outlet. An injection pump has an input end in fluid communication with the outlet of the solution reservoir and an output end in fluid communication with the electrochemical cell, wherein the injection pumps an amount of the solution from the solution reservoir to mix with a water solution and enter the electrochemical cell. A current feedback sensor senses a cell current in the electrochemical cell. A current control unit in data communication with the current feedback sensor and the injection pump wherein the current control unit compares the cell current with a preselected current and adjusts the amount of solution pumped from the injection pump responsive to the comparison. The apparatus may also include an automatic control feedback system to monitor and adjust pH.

There is provided an apparatus for producing strong alkaline reductive electrolyzed water and acidic water that enables efficient production of electrolyzed water that has excellent washing and sterilizing effects. There is provided an apparatus for producing strong alkaline reductive electrolyzed water and acidic water, which includes an electrolyzer provided with a strong alkaline reductive electrolyzed water-producing chamber, an acidic water-producing chamber and a partitioning membrane, wherein a flow path diffusing device is provided in the electrolyzer, and a gap between the cathode plate and the anode plate of 0.1 mm to 1 mm.

The present invention generally relates to apparatus and methods for plating conductive materials on a substrate. One embodiment of the present invention provides an apparatus for plating a conductive material on a substrate. The apparatus comprises a fluid basin configured to retain an electrolyte, a contact ring configured to support the substrate and contact the substrate electrically, and an anode assembly disposed in the fluid basin, wherein the anode assembly comprises a plurality of anode elements arranged in rows.

An electro-galvanic hydrogen generator system that has two or more anode materials; a cathode material; and an electrolyte. The electrolyte comprises a metal hydride, at least one stabilizing agent, and a solvent. Hydrogen gas is generated whenever an anode material and the cathode material are electrically connected, and the different anode materials can be used separately or in combination to control the quantity and rate of hydrogen generation. An insulating shield may be used to catch reaction debris from the anodes. A removable inert layer may cover the electrodes. The use of cell pressure may regulate the rate of hydrogen generation. The hydrogen generator may have a separate catalyst chamber, and the hydrogen generator may also function as a battery.

A solar electrolysis power co-generation system includes a solar electrolysis source and a control unit. The solar electrolysis source includes a solar panel, an electrolysis unit, a hermetically sealed compressor, a hydrogen tank, and a hydrogen-powered fuel cell and produces, compresses, and stores hydrogen gas that is used to fuel the fuel cell. The control unit includes an inverter, a microprocessor, and a modem. The control unit connects the solar electrolysis power source with a power grid and with an individual consumer having an electrical load. The power co-generation system utilizes the electrolysis of water and solar energy to power a fuel cell. The energy produced with the fuel cell may be provided to an existing power gird as well as to an individual consumer. Further a method for decentralized power co-generation includes the step of providing a plurality of solar electrolysis power co-generation systems.

An apparatus for electroplating a layer of metal on the surface of a wafer includes a second cathode located remotely with respect to the wafer. The remotely positioned second cathode allows modulation of current density at the wafer surface during an entire electroplating process. The second cathode diverts a portion of current flow from the near-edge region of the wafer and improves the uniformity of plated layers. The remote position of second cathode allows the insulating shields disposed in the plating bath to shape the current profile experienced by the wafer, and therefore act as a “virtual second cathode”. The second cathode may be positioned outside of the plating vessel and separated from it by a membrane.

Various embodiments of a planarization device and methods of using the same are provided. In one aspect, a device for planarizing a surface of a semiconductor workpiece is provided that includes a table for holding a quantity of an electrically conducting solution thereon. A member is included for holding the semiconductor workpiece such that the surface is in contact with the solution and operates as a working electrode. The member has a first conductor for establishing electrical connection with the semiconductor workpiece. A counter electrode is provided for making electrical connection with the solution and a reference electrode is provided for making electrical connection with the solution with a known electrode potential. A power source is operable to control the electric potential between the working electrode and the counter electrode. Slurry consumption may be dramatically reduced and static etch rate due to aborts may be virtually eliminated.

Methods of electroplating metal on a substrate while controlling azimuthal uniformity, include, in one aspect, providing the substrate to the electroplating apparatus configured for rotating the substrate during electroplating, and electroplating the metal on the substrate while rotating the substrate relative to a shield such that a selected portion of the substrate at a selected azimuthal position dwells in a shielded area for a different amount of time than a second portion of the substrate having the same average arc length and the same average radial position and residing at a different angular (azimuthal) position. For example, a semiconductor wafer substrate can be rotated during electroplating slower or faster, when the selected portion of the substrate passes through the shielded area.

A method for optimizing the efficiency of a solar powered hydrogen generation system is disclosed. The system utilizes photovoltaic modules and a proton exchange membrane electrolyzer to split water into hydrogen and oxygen with an efficiency greater than 12%. This high efficiency for the solar powered electrolysis of water was obtained by matching the voltage generated by photovoltaic modules to the operating voltage of the electrolyzer. Optimizing PV-electrolysis systems makes solar generated hydrogen less expensive and more practical for use as an environmentally clean and renewable fuel.

A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. Low copper concentration and high acidity electroplating solution is used for deposition copper into the through silicon vias.