45 results about "Radial line slot antenna" patented technology

After an ONO film in which a silicon nitride film (22) formed by a plasma nitriding method using a plasma processor having a radial line slot antenna is sandwiched by silicon oxide films (21), (23), a bit line diffusion layer (17) is formed in a memory cell array region (11) by an ion implantation as a resist pattern (16) taken as a mask, then lattice defects are given to the silicon nitride film (22) by a further ion implantation. Accordingly, a highly reliable semiconductor memory device can be realized, in which a high quality nitride film is formed in a low temperature condition, in addition, the nitride film can be used as a charge trap film having a charge capture function sufficiently adaptable for a miniaturization and a high integration which are recent demands.

A plasma processing system is described for generating plasma with a ballistic electron beam using a surface wave plasma (SWP) source, such as a radial line slot antenna (RLSA) during semiconductor device fabrication. The antenna comprises a resonator plate having a partially open, electrically conductive layer coupled to a surface of the resonator plate. For example, the electrically conductive layer is formed at an interface between the resonator plate and the plasma.

A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.

In a microwave plasma processing apparatus that uses a radial line slot antenna, a slot plate (16) is formed by a material having a thermal expansion rate close to the wave retardation plate (18), or depositing a metal on a dielectric plate constituting the wave retardation plate (18). An intimate contact between the wave retardation plate and a slot plate constituting a microwave radiation surface is improved so as to prevent an abnormal electric discharge.

A plasma processing system is described for generating plasma with a ballistic electron beam using a surface wave plasma (SWP) source, such as a radial line slot antenna (RLSA) during semiconductor device fabrication. The antenna comprises a resonator plate having a partially open, electrically conductive layer coupled to a surface of the resonator plate. For example, the electrically conductive layer is formed at an interface between the resonator plate and the plasma, and a direct current (DC) voltage is applied to the electrically conductive layer.

In a microwave plasma processing apparatus that uses a radial line slot antenna, a slot plate (16) is formed by a material having a thermal expansion rate close to the wave retardation plate (18), or depositing a metal on a dielectric plate constituting the wave retardation plate (18). An intimate contact between the wave retardation plate and a slot plate constituting a microwave radiation surface is improved so as to prevent an abnormal electric discharge.

A radial line slot antenna (RLSA) is described for generating plasma during semiconductor device fabrication. The antenna comprises a resonator plate having a partially open, electrically conductive layer coupled to a surface of the resonator plate. For example, the electrically conductive layer is formed at an interface between the resonator plate and the plasma.

An etching method capable of increasing the selectivity of a polysilicon film to a silicon oxide film and suppressing recess formation on a silicon base layer. That part of the polysilicon film of a wafer transferred into a processing vessel which is exposed through an opening is etched so as to slightly remain on a gate oxide film. The pressure in a processing space is set to 66.7 Pa, HBr gas and He gas are supplied to the processing space, and a microwave of 2.45 GHz is supplied to a radial line slot antenna. The polysilicon film is etched by plasma generated from the HBr gas so as to be completely removed, the exposed gate oxide film is etched, and a resist film and an anti-reflection film are etched.

In a microwave plasma processing apparatus that uses a radial line slot antenna, the efficiency of cooling of a shower plate is optimized and simultaneously the efficiency of microwave excitation is optimized, by causing a radiation surface of the radial line slot antenna to make an intimate contact with a cover plate that forms a part of an outer wall of the processing chamber and makes an intimate contact with the shower plate.

A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.

In a microwave plasma processing apparatus that uses a radial line slot antenna, abnormal discharges are suppressed and the excitation efficiency of microwave plasma is improved simultaneously. In the joint between the radial line slot antenna and the coaxial waveguide, the point part of the power supplying line of the coaxial waveguide is separated from the slot plate constructing a radiation face.

An antenna that includes a radial waveguide defining a waveguide region between opposed first and second surfaces. A radio frequency (RF) probe is disposed in the waveguide region for generating RF signals, and a plurality of radiating slot antenna elements are disposed on the first surface for emitting the RF signals from the waveguide region. A plurality of spaced apart conductive elements are disposed within the waveguide region. The antenna includes tunable elements that each include a quarter wavelength RF choke coupled through a variable capacitance and an inductive line to a respective one of the conductive elements. A plurality of DC control lines are provided, with each DC control line being connected to at least one of the tunable elements to adjust the variable capacitance thereof. A control circuit is coupled to the DC control lines and configured to selectively apply DC current values to adjust the variable capacitances of the tunable elements to control a propagation direction of the RF signals from the RF probe.

A gate insulation film (104) of a MISFET (100) is constituted of a silicon oxide film (106), silicon nitride film (107), and high-permittivity film (108). The silicon oxide film (106) and silicon nitride film (107) are formed by microwave plasma processing with a radial line slot antenna.

Disclosed is an in-situ optical monitor (ISOM) system and associated method for controlling plasma etching processes during the forming of stepped structures in semiconductor manufacturing. The in-situ optical monitor (ISOM) can be optionally configured for coupling to a surface-wave plasma source (SWP), for example a radial line slotted antenna (RLSA) plasma source. A method is described to correlate the lateral recess of the steps and the etched thickness of a photoresist layer for use with the in-situ optical monitor (ISOM) during control of plasma etching processes in the forming of stepped structures.

In a RLSA microwave plasma processing apparatus that radiates microwave from a microwave generator into a chamber by using a planer antenna (Radial Line Slot Antenna) having many slots formed according to a certain pattern, the chamber contaminated with Na or the like is cleaned by using a cleaning gas containing H2 and O2.

A gate insulation film (104) of a MISFET (100) is constituted of a silicon oxide film (106), silicon nitride film (107), and high-permittivity film (108). The silicon oxide film (106) and silicon nitride film (107) are formed by microwave plasma processing with a radial line slot antenna.